Driving Techniques For Gan Power Hemts

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Highly Integrated Gate Drivers for Si and GaN Power Transistors

Author : Achim Seidel
Publisher : Springer Nature
ISBN 13 : 3030689409
Total Pages : 137 pages
Book Rating : 4.0/5 (36 download)

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Book Synopsis Highly Integrated Gate Drivers for Si and GaN Power Transistors by : Achim Seidel

Download or read book Highly Integrated Gate Drivers for Si and GaN Power Transistors written by Achim Seidel and published by Springer Nature. This book was released on 2021-03-31 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

Intermodulation Distortion Modelling and Measurement Techniques for GaN HEMT Characterization

Author :
Publisher : kassel university press GmbH
ISBN 13 : 3899586557
Total Pages : 212 pages
Book Rating : 4.8/5 (995 download)

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Book Synopsis Intermodulation Distortion Modelling and Measurement Techniques for GaN HEMT Characterization by :

Download or read book Intermodulation Distortion Modelling and Measurement Techniques for GaN HEMT Characterization written by and published by kassel university press GmbH. This book was released on with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

Author : Jutta Kühn
Publisher : KIT Scientific Publishing
ISBN 13 : 3866446152
Total Pages : 264 pages
Book Rating : 4.8/5 (664 download)

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Book Synopsis AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications by : Jutta Kühn

Download or read book AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications written by Jutta Kühn and published by KIT Scientific Publishing. This book was released on 2011 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

Simulation Tools and Techniques

Author : Dingde Jiang
Publisher : Springer Nature
ISBN 13 : 3030971244
Total Pages : 652 pages
Book Rating : 4.0/5 (39 download)

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Book Synopsis Simulation Tools and Techniques by : Dingde Jiang

Download or read book Simulation Tools and Techniques written by Dingde Jiang and published by Springer Nature. This book was released on 2022-03-30 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings constitutes the refereed post-conference proceedings of the 13th International Conference on Simulation Tools and Techniques, SIMUTools 2021, held in November 2021. Due to COVID-19 pandemic the conference was held virtually. The 63 revised full papers were carefully selected from 143 submissions. The papers focus on new results in the field of system modeling and simulation, software simulation, communication networks’ modeling and analysis, AI system simulation and performance analysis, big data simulation analysis, addressing current and future trends in simulation techniques. They are grouped in thematic aspects on wireless communication, big data, modeling and simulation, deep learning, network simulation and life and medical sciences.

Millimeter-Wave GaN Power Amplifier Design

Author : Edmar Camargo
Publisher : Artech House
ISBN 13 : 163081945X
Total Pages : 339 pages
Book Rating : 4.6/5 (38 download)

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Book Synopsis Millimeter-Wave GaN Power Amplifier Design by : Edmar Camargo

Download or read book Millimeter-Wave GaN Power Amplifier Design written by Edmar Camargo and published by Artech House. This book was released on 2022-05-31 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives you – in one comprehensive and practical resource -- everything you need to successfully design modern and sophisticated power amplifiers at mmWave frequencies. The book provides an in-depth treatment of the design methodology for MMIC power amplifiers, then brings you step by step through the various phases of design, from the selection of technology and preliminary architecture considerations, to the effective design of the matching circuits and conversion of electrical-to-electromagnetic models. Detailed figures and numerous practical applications are included to help you gain valuable insights into these technologies and learn to identify the best path to a successful design. You’ll be guided through a range of new mmWave power applications that show particular promise to support new 5G systems, while mastering the use of GaN technology that continues to dominate the power mmWave applications due to its high power, gain, and efficiency. This is a valuable resource for power amplifier design engineers, technicians, industry R&D staff, and anyone getting into the area of power MMICs who wants to learn how to design at mmWave frequencies.

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 301 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594146
Total Pages : 389 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-09-30 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Gallium Nitride (GaN)

Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

More-than-Moore Devices and Integration for Semiconductors

Author : Francesca Iacopi
Publisher : Springer Nature
ISBN 13 : 3031216105
Total Pages : 271 pages
Book Rating : 4.0/5 (312 download)

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Book Synopsis More-than-Moore Devices and Integration for Semiconductors by : Francesca Iacopi

Download or read book More-than-Moore Devices and Integration for Semiconductors written by Francesca Iacopi and published by Springer Nature. This book was released on 2023-02-17 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems with a broad range of functionalities that can be added to 3D microsystems, including flexible electronics, metasurfaces and power sources. The book also includes examples of applications for brain-computer interfaces and event-driven imaging systems. Provides a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems; Covers functionalities to add to 3D microsystems, including flexible electronics, metasurfaces and power sources; Includes current applications, such as brain-computer interfaces, event - driven imaging and edge computing.

Monolithic Integration in E-Mode GaN Technology

Author : Maik Peter Kaufmann
Publisher : Springer Nature
ISBN 13 : 3031156250
Total Pages : 185 pages
Book Rating : 4.0/5 (311 download)

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Book Synopsis Monolithic Integration in E-Mode GaN Technology by : Maik Peter Kaufmann

Download or read book Monolithic Integration in E-Mode GaN Technology written by Maik Peter Kaufmann and published by Springer Nature. This book was released on 2022-10-26 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.

Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design

Author : Endalkachew Shewarega Mengistu
Publisher : kassel university press GmbH
ISBN 13 : 3899583817
Total Pages : 153 pages
Book Rating : 4.8/5 (995 download)

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Book Synopsis Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design by : Endalkachew Shewarega Mengistu

Download or read book Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Technology of Gallium Nitride Crystal Growth

Author : Dirk Ehrentraut
Publisher : Springer Science & Business Media
ISBN 13 : 3642048307
Total Pages : 337 pages
Book Rating : 4.6/5 (42 download)

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Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut

Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

GaN Transistor Modeling for RF and Power Electronics

Author : Yogesh Singh Chauhan
Publisher : Elsevier
ISBN 13 : 0323999409
Total Pages : 262 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis GaN Transistor Modeling for RF and Power Electronics by : Yogesh Singh Chauhan

Download or read book GaN Transistor Modeling for RF and Power Electronics written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-20 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction

Recent Advances in Electrical and Electronic Engineering

Author : Bibhu Prasad Swain
Publisher : Springer Nature
ISBN 13 : 9819947138
Total Pages : 584 pages
Book Rating : 4.8/5 (199 download)

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Book Synopsis Recent Advances in Electrical and Electronic Engineering by : Bibhu Prasad Swain

Download or read book Recent Advances in Electrical and Electronic Engineering written by Bibhu Prasad Swain and published by Springer Nature. This book was released on 2023-11-03 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents select proceedings of the International Conference on Science, Technology and Engineering (ICSTE 2023) related to electrical and electronic engineering. Various topics covered include neural network classification, text detection from natural scene images, speech processing systems, Wi-Fi intrusion detection, machine learning, wireless sensor network, image retrieval, automatic speech recognition, device physics, power transfer, photovoltaics, antenna for ultra-wideband applications, electric vehicles, etc. The book is useful for researchers and professionals whose work involves electrical and electronics and computer science fields.

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Author : Gaudenzio Meneghesso
Publisher : Springer
ISBN 13 : 331977994X
Total Pages : 242 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by : Gaudenzio Meneghesso

Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Nonlinear Transistor Model Parameter Extraction Techniques

Author : Matthias Rudolph
Publisher : Cambridge University Press
ISBN 13 : 1139502263
Total Pages : 367 pages
Book Rating : 4.1/5 (395 download)

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Book Synopsis Nonlinear Transistor Model Parameter Extraction Techniques by : Matthias Rudolph

Download or read book Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and published by Cambridge University Press. This book was released on 2011-10-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.