Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Dopant Implantation And Oxidation Of Polycrystalline Silicon Germanium Films full books in PDF, epub, and Kindle. Read online Dopant Implantation And Oxidation Of Polycrystalline Silicon Germanium Films ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : William John Edwards
Publisher :
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.E/5 ( download)
Download or read book Dopant Implantation and Oxidation of Polycrystalline Silicon-germanium Films written by William John Edwards and published by . This book was released on 1996 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Raminderpal Singh
Publisher : John Wiley & Sons
ISBN 13 : 0471660914
Total Pages : 368 pages
Book Rating : 4.4/5 (716 download)
Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM
Author : Yuen-Shung Chieh
Publisher : Ann Arbor, Mich. : University Microfilms International
ISBN 13 :
Total Pages : 646 pages
Book Rating : 4.E/5 ( download)
Download or read book Design, Fabrication and Characterization of 100 Nm CMOS Devices written by Yuen-Shung Chieh and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 1996 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : United States. Patent and Trademark Office
Publisher :
ISBN 13 :
Total Pages : 1530 pages
Book Rating : 4.0/5 ( download)
Download or read book Official Gazette of the United States Patent and Trademark Office written by United States. Patent and Trademark Office and published by . This book was released on 2002 with total page 1530 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1000 pages
Book Rating : 4.3/5 (91 download)
Download or read book JJAP Letters written by and published by . This book was released on 2005 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Alexei Nazarov
Publisher : Springer Science & Business Media
ISBN 13 : 3642158684
Total Pages : 437 pages
Book Rating : 4.6/5 (421 download)
Download or read book Semiconductor-On-Insulator Materials for Nanoelectronics Applications written by Alexei Nazarov and published by Springer Science & Business Media. This book was released on 2011-03-03 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Author : David Louis Harame
Publisher : The Electrochemical Society
ISBN 13 : 1566775078
Total Pages : 1280 pages
Book Rating : 4.5/5 (667 download)
Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Author : Eberhard F. Krimmel
Publisher : Springer Science & Business Media
ISBN 13 : 3662099012
Total Pages : 417 pages
Book Rating : 4.6/5 (62 download)
Download or read book Si Silicon written by Eberhard F. Krimmel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Author : Paul J. Timans
Publisher : The Electrochemical Society
ISBN 13 : 9781566773348
Total Pages : 500 pages
Book Rating : 4.7/5 (733 download)
Download or read book Rapid Thermal and Other Short-time Processing Technologies III written by Paul J. Timans and published by The Electrochemical Society. This book was released on 2002 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : F. Roozeboom
Publisher : The Electrochemical Society
ISBN 13 : 1566778638
Total Pages : 377 pages
Book Rating : 4.5/5 (667 download)
Download or read book Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.
Author :
Publisher :
ISBN 13 :
Total Pages : 1056 pages
Book Rating : 4.X/5 (4 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1972 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 690 pages
Book Rating : 4.3/5 (91 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tsu-Jae King
Publisher :
ISBN 13 :
Total Pages : 270 pages
Book Rating : 4.:/5 (387 download)
Download or read book Applications of Polycrystalline Silicon-germaniun Thin Films in Metal-oxide-semiconductor Technologies written by Tsu-Jae King and published by . This book was released on 1994 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 692 pages
Book Rating : 4.X/5 (6 download)
Download or read book JJAP written by and published by . This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Xiaoge Gregory Zhang
Publisher : Springer Science & Business Media
ISBN 13 : 0306479214
Total Pages : 525 pages
Book Rating : 4.3/5 (64 download)
Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.
Author : Peter Jon VanDerVoorn
Publisher :
ISBN 13 :
Total Pages : 494 pages
Book Rating : 4.E/5 ( download)
Download or read book Design, Fabrication, and Characterization of Shallow Trench Isolation and Raised Source/drains for 100NM CMOS written by Peter Jon VanDerVoorn and published by . This book was released on 1998 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Renjie Wang
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (14 download)
Download or read book Heteroepitaxial Growth of Silicon and Germanium Thin Films on Flexible Metal Substrate by Magnetron Sputtering written by Renjie Wang and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: High mobility single-crystalline-like Ge thin films have been demonstrated on inexpensive polycrystalline metallic substrates buffered with oxide buffer layer. Doped films of p-type and n-type were fabricated using radio frequency magnetron sputtering on flexible epitaxial templates produced by ion beam assisted deposition (IBAD). Ideal conditions for fabricating p-type and n-type Ge thin films have been optimized based on their structure and Hall mobility. As defect density in Ge is directly related to the CeO2 buffer, the effect of CeO2 layer thickness and quality has been evaluated. A structural design of a p-i-n junction is proposed for solar cells on our flexible substrate based on electrical and crystal properties of Si and Ge thin films fabricated. In order to achieve an efficient harvesting of photo-generated free carriers, fabrication of substrates terminated with epitaxial conductive layers is studied.
