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Author : R. G. Powell
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (258 download)
Download or read book Diffusion of sulphur in gallium arsenide written by R. G. Powell and published by . This book was released on 1975 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Alvin Bau Yuen Young
Publisher :
ISBN 13 :
Total Pages : 116 pages
Book Rating : 4.F/5 ( download)
Download or read book Diffusion of Sulfur in Gallium Phosphide and Gallium Arsenide written by Alvin Bau Yuen Young and published by . This book was released on 1969 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : N. Baba-Ali
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (598 download)
Download or read book Diffusion of Sulphur and Silicon in Aluminium Gallium Arsenide written by N. Baba-Ali and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Siu Sing Chan
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.:/5 (12 download)
Download or read book Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide written by Siu Sing Chan and published by . This book was released on 1983 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Author : S. V. Mashnin
Publisher :
ISBN 13 :
Total Pages : 6 pages
Book Rating : 4.:/5 (227 download)
Download or read book Electrical Properties of the Diffusion P-N Junctures of P-Type Gallium Arsenide written by S. V. Mashnin and published by . This book was released on 1973 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: The paper discusses results of research on the influence of cooling on the volt-ampere characteristic of p-n junctures obtained by the diffusion of sulphur and tin. The relationship of the spark-over voltage to the gradient of concentration of the mixture in the field of the space charge and of the critical voltage of the electric field in a p-n juncture from the width of the field of the space charge is also discussed.
Author : Brian Tuck
Publisher : CRC Press
ISBN 13 : 1000447960
Total Pages : 252 pages
Book Rating : 4.0/5 (4 download)
Download or read book Atomic Diffusion in III-V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-31 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.
Author : James Douglas Sansbury
Publisher :
ISBN 13 :
Total Pages : 210 pages
Book Rating : 4.:/5 (258 download)
Download or read book Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide written by James Douglas Sansbury and published by . This book was released on 1970 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. Kearton
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (14 download)
Download or read book Electrical properties of gallium arsenide implanted with sulphur written by B. Kearton and published by . This book was released on 1977 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : CRC Press
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.:/5 (45 download)
Download or read book Gallium Arsenide and Related Compounds 1972, written by and published by CRC Press. This book was released on 1973-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : N. Hannay
Publisher : Springer Science & Business Media
ISBN 13 : 1461568900
Total Pages : 646 pages
Book Rating : 4.4/5 (615 download)
Download or read book Electronic Materials written by N. Hannay and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume constitutes the written proceedings of the Third International Conference on Materials SCience, held under the sponsorship of the Accademia Nazionale dei Lincei as the XIII summer course of the G. Donegani Foundation at Tremezzo, Italy, on September 4-15, 1972. The course of lectures was designed for scientists and engineers "d th a ,wrking knowledge of electronic materials, who sought to extend their knowledge of the newest developments in the field. The rapid pace of research and exploratory development in electronic materials has led to a preSSing need for continuing awareness and assessment of new electronic materials, as well as renewal of information in the more traditional areas. Three classes of electronic materials were selected for the course. Semiconductors provide the foundation for solid state electronics and semiconductor devices represent the most sophisti cated and advanced application of materials science and engineering known to modern technology. Yet, the march of progress in semi conductors continues ,unabated - new semiconductor materials are in the research stage, new process technology is being developed, and new devices are being conceived. The second class of materials dealt with in the course, magnetic alloys and insulators, also has a firm application base; for example, computer performance is often measured in terms of the size of the magnetic memory. The tailoring of materials to provide particular combinations of desired magnetic properties is an integral part of the development of the electronics, just as in the case of semiconductors.
Author : M. J. Howes
Publisher :
ISBN 13 :
Total Pages : 608 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Author : C.R.M. Grovenor
Publisher : Routledge
ISBN 13 : 1351431544
Total Pages : 557 pages
Book Rating : 4.3/5 (514 download)
Download or read book Microelectronic Materials written by C.R.M. Grovenor and published by Routledge. This book was released on 2017-10-05 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Author :
Publisher : INSPEC
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : A. C. Stickland
Publisher :
ISBN 13 :
Total Pages : 288 pages
Book Rating : 4.:/5 (318 download)
Download or read book Gallium Arsenide written by A. C. Stickland and published by . This book was released on 1967 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Edward Bryant Stoneham
Publisher :
ISBN 13 :
Total Pages : 464 pages
Book Rating : 4.F/5 ( download)
Download or read book The Effects of Ion-implanted Gallium, Arsenic, and Phosphorus on the Diffusion of Ion-implanted Zinc in Gallium Arsenide Phosphide written by Edward Bryant Stoneham and published by . This book was released on 1975 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Leroy Li-gong Chang
Publisher :
ISBN 13 :
Total Pages : 88 pages
Book Rating : 4.F/5 ( download)
Download or read book Diffusion, Solubility, and Distribution Coefficient of Zinc in Gallium Arsenide and Galium Phosphide written by Leroy Li-gong Chang and published by . This book was released on 1963 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 672 pages
Book Rating : 4.X/5 (1 download)
Download or read book Gallium Arsenide and Related Compounds written by and published by . This book was released on 1988 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt:
