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Diffusion Of Ion Implanted Group Iv N Type Dopants In Gallium Arsenide And Gallium Arsenide Based Superlattices
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Book Synopsis Diffusion of Ion-implanted Group IV N-type Dopants in Gallium Arsenide and Gallium Arsenide-based Superlattices by : Emily Lin Allen
Download or read book Diffusion of Ion-implanted Group IV N-type Dopants in Gallium Arsenide and Gallium Arsenide-based Superlattices written by Emily Lin Allen and published by . This book was released on 1991 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Annual Commencement by : Stanford University
Download or read book Annual Commencement written by Stanford University and published by . This book was released on 1992 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-V Electronic and Photonic Device Fabrication and Performance: Volume 300 by : K. S. Jones
Download or read book III-V Electronic and Photonic Device Fabrication and Performance: Volume 300 written by K. S. Jones and published by Mrs Proceedings. This book was released on 1993-08-25 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Doping Gallium Arsenide by Ion Implantation and Proton-enhanced Diffusion by : Robert Ell Tremain
Download or read book Doping Gallium Arsenide by Ion Implantation and Proton-enhanced Diffusion written by Robert Ell Tremain and published by . This book was released on 1976 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1992 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1991 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Encyclopedia of Materials by : K. H. J. Buschow
Download or read book Encyclopedia of Materials written by K. H. J. Buschow and published by . This book was released on 2001 with total page 1120 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accompanyind CR-ROM conrtains The Encyclopedia of Materials Science and Technology on a web access disc.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Diffusion of P-type Dopants in Gallium Arsenide by : Heyward Gibbes Robinson
Download or read book Diffusion of P-type Dopants in Gallium Arsenide written by Heyward Gibbes Robinson and published by . This book was released on 1992 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis N-Type Doping of Gallium Arsenide by Ion Implantation by : T. Ambridge
Download or read book N-Type Doping of Gallium Arsenide by Ion Implantation written by T. Ambridge and published by . This book was released on 1977 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide by : Siu Sing Chan
Download or read book Diffusion and Electrical Properties of Sulfur Implanted in Gallium Arsenide written by Siu Sing Chan and published by . This book was released on 1983 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the need for high speed devices and circuits continues to grow, GaAs has received increasing attention as a viable (both technologically and economically) electronic material complementary to Si. The advantages of GaAs lie in its much higher electron mobility and its compatibility with optoelectronic devices. The merits of a planar process have been well demonstrated in Si technology, and in the course of the development of a similar process for GaAs, ion implantation has emerged as an indispensable tool. Ion implantation is inherently a much more precise and controllable method of selective semiconductor doping than diffusion. To attain the degree of line-width control necessary for high speed or high density devices, ion implantation is a prerequisite. Besides, many useful dopants in GaAs cannot be introduced readily by diffusion because of material constraints. In spite of its importance in the fabrication of devices which take advantage of the high electron mobility of GaAs, donor implantation in GaAs has not found as much success as acceptor implantations. In order to avoid amphoteric tendencies and possible self-compensation mechanisms, it is generally best to use a column VI element.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Extended Abstracts by : Electrochemical Society
Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1990 with total page 1416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Quantum Well Intermixing by : J. T. Lie
Download or read book Semiconductor Quantum Well Intermixing written by J. T. Lie and published by CRC Press. This book was released on 2000-01-18 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure
Book Synopsis Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide by : Richard Dana Pashley
Download or read book Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide written by Richard Dana Pashley and published by . This book was released on 1974 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
