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Download Development Of Experimental Methodology For Improved Local Variability Assessment In Advanced Cmos Devices full books in PDF, epub, and Kindle. Read online Development Of Experimental Methodology For Improved Local Variability Assessment In Advanced Cmos Devices ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
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ISBN 13 :
Total Pages : 368 pages
Book Rating : 4.3/5 (91 download)
Download or read book International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 2005 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 850 pages
Book Rating : 4.F/5 ( download)
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 768 pages
Book Rating : 4.:/5 (3 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 2304 pages
Book Rating : 4.3/5 (243 download)
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author : Kerry Bernstein
Publisher : Springer Science & Business Media
ISBN 13 : 0387740996
Total Pages : 232 pages
Book Rating : 4.3/5 (877 download)
Download or read book SOI Circuit Design Concepts written by Kerry Bernstein and published by Springer Science & Business Media. This book was released on 2007-09-18 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.
Author : Paul Jespers
Publisher : Springer Science & Business Media
ISBN 13 : 0387471014
Total Pages : 180 pages
Book Rating : 4.3/5 (874 download)
Download or read book The gm/ID Methodology, a sizing tool for low-voltage analog CMOS Circuits written by Paul Jespers and published by Springer Science & Business Media. This book was released on 2009-12-01 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise, non-linear distortion, etc. Making optimal choices is a difficult task. How to minimize for instance the power consumption of an operational amplifier without too much penalty regarding area while keeping the gain-bandwidth unaffected in the same time? Moderate inversion yields high gains, but the concomitant area increase adds parasitics that restrict bandwidth. Which methodology to use in order to come across the best compromise(s)? Is synthesis a mixture of design experience combined with cut and tries or is it a constrained multivariate optimization problem, or a mixture? Optimization algorithms are attractive from a system perspective of course, but what about low-voltage low-power circuits, requiring a more physical approach? The connections amid transistor physics and circuits are intricate and their interactions not always easy to describe in terms of existing software packages. The gm/ID synthesis methodology is adapted to CMOS analog circuits for the transconductance over drain current ratio combines most of the ingredients needed in order to determine transistors sizes and DC currents.
Author : T. M. R. Ellis
Publisher : Elsevier
ISBN 13 : 1483189899
Total Pages : 387 pages
Book Rating : 4.4/5 (831 download)
Download or read book Control Problems and Devices in Manufacturing Technology 1980 written by T. M. R. Ellis and published by Elsevier. This book was released on 2014-05-20 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: Control Problems and Devices in Manufacturing Technology 1980 presents the proceedings of the 3rd IFAC/IFIP Symposium on Control Problems and Devices in Manufacturing Technology, held in Budapest, Hungary, on October 22–25, 1980. This book discusses the increasing use of robots in both machining and assembly. Organized into 49 chapters, this compilation of papers begins with an overview of the development in computer-aided design and computer-aided manufacturing. This text then explores the application of computers to the automation of manufacturing processes that have resulted in great progress. Other chapters consider the theoretical aspects and devices concerning material handling, machine control, automatic measurement, and inspection. This book discusses as well the significant roles of numerically controlled machine-tools and robots in the manufacturing system. The final chapter deals with identification and optimal operation of cyclic mechanisms. This book is a valuable resource for control and plant engineers as well as for control system designers.
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ISBN 13 :
Total Pages : 596 pages
Book Rating : 4.3/5 (91 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.
Author : Norman Einspruch
Publisher : Elsevier
ISBN 13 : 0323153135
Total Pages : 383 pages
Book Rating : 4.3/5 (231 download)
Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
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ISBN 13 :
Total Pages : 974 pages
Book Rating : 4.F/5 ( download)
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 302 pages
Book Rating : 4.:/5 (31 download)
Download or read book Proceedings written by and published by . This book was released on 2004 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1118 pages
Book Rating : 4.3/5 (91 download)
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : Masoud Babaie
Publisher :
ISBN 13 : 9788770043519
Total Pages : 0 pages
Book Rating : 4.0/5 (435 download)
Download or read book RF CMOS Oscillators for Modern Wireless Applications written by Masoud Babaie and published by . This book was released on 2024-10-21 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to bring forth the exciting and innovative RF oscillator structures that demonstrate better phase noise performance, lower cost, and higher power efficiency than currently achievable.
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ISBN 13 :
Total Pages : 2264 pages
Book Rating : 4.:/5 (319 download)
Download or read book The Engineering Index Annual written by and published by . This book was released on 1993 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Author : Tibor Grasser
Publisher : Springer Science & Business Media
ISBN 13 : 1461479096
Total Pages : 805 pages
Book Rating : 4.4/5 (614 download)
Download or read book Bias Temperature Instability for Devices and Circuits written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2013-10-22 with total page 805 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
