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Development And Characterization Of Ultrathin Hafnium Titanates As High Permittivity Gate Insulators
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Book Synopsis Development and Characterization of Ultrathin Hafnium Titanates as High Permittivity Gate Insulators by : Min Li
Download or read book Development and Characterization of Ultrathin Hafnium Titanates as High Permittivity Gate Insulators written by Min Li and published by . This book was released on 2005 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 942 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hf-based High-k Dielectrics by : Young-Hee Kim
Download or read book Hf-based High-k Dielectrics written by Young-Hee Kim and published by Morgan & Claypool Publishers. This book was released on 2005 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Book Synopsis Ferroelectricity in Doped Hafnium Oxide by : Uwe Schroeder
Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Book Synopsis Solid State Circuits Technologies by : Jacobus Swart
Download or read book Solid State Circuits Technologies written by Jacobus Swart and published by IntechOpen. This book was released on 2010-01-01 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book.
Book Synopsis High-k Gate Dielectric Materials by : Niladri Pratap Maity
Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Book Synopsis Polymer Nanocomposite Materials by : Ye Zhou
Download or read book Polymer Nanocomposite Materials written by Ye Zhou and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polymer Nanocomposite Materials Discover an authoritative overview of zero-, one-, and two-dimensional polymer nanomaterials Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices delivers an original and insightful treatment of polymer nanocomposite applications in energy, information, and biotechnology. The book systematically reviews the preparation and characterization of polymer nanocomposites from zero-, one-, and two-dimensional nanomaterials. The two distinguished editors have selected resources that thoroughly explore the applications of polymer nanocomposites in energy, information, and biotechnology devices like sensors, solar cells, data storage devices, and artificial synapses. Academic researchers and professional developers alike will enjoy one of the first books on the subject of this environmentally friendly and versatile new technology. Polymer Nanocomposite Materials discusses challenges associated with the devices and materials, possible strategies for future directions of the technology, and the possible commercial applications of electronic devices built on these materials. Readers will also benefit from the inclusion of: A thorough introduction to the fabrication of conductive polymer composites and their applications in sensors An exploration of biodegradable polymer nanocomposites for electronics and polymer nanocomposites for photodetectors Practical discussions of polymer nanocomposites for pressure sensors and the application of polymer nanocomposites in energy storage devices An examination of functional polymer nanocomposites for triboelectric nanogenerators and resistive switching memory Perfect for materials scientists and polymer chemists, Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices will also earn a place in the libraries of sensor developers, electrical engineers, and other professionals working in the sensor industry seeking an authoritative one-stop reference for nanocomposite applications.
Book Synopsis Internal Photoemission Spectroscopy by : Valeri V. Afanas'ev
Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2014-02-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. - First complete model description of the internal photoemission phenomena - Overview of the most reliable energy barrier determination procedures and trap characterization methods - Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
Book Synopsis National Semiconductor Metrology Program by : National Institute of Standards and Technology (U.S.)
Download or read book National Semiconductor Metrology Program written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1995 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thin Film Dielectrics by : Frederick Vratny
Download or read book Thin Film Dielectrics written by Frederick Vratny and published by . This book was released on 1969 with total page 669 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Solid Surfaces by : Philip F. Kane
Download or read book Characterization of Solid Surfaces written by Philip F. Kane and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 675 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until comparatively recently, trace analysis techniques were in general directed toward the determination of impurities in bulk materials. Methods were developed for very high relative sensitivity, and the values determined were average values. Sampling procedures were devised which eliminated the so-called sampling error. However, in the last decade or so, a number of developments have shown that, for many purposes, the distribution of defects within a material can confer important new properties on the material. Perhaps the most striking example of this is given by semiconductors; a whole new industry has emerged in barely twenty years based entirely on the controlled distribu tion of defects within what a few years before would have been regarded as a pure, homogeneous crystal. Other examples exist in biochemistry, metallurgy, polyiners and, of course, catalysis. In addition to this of the importance of distribution, there has also been a recognition growing awareness that physical defects are as important as chemical defects. (We are, of course, using the word defect to imply some dis continuity in the material, and not in any derogatory sense. ) This broadening of the field of interest led the Materials Advisory Board( I} to recommend a new definition for the discipline, "Materials Character ization," to encompass this wider concept of the determination of the structure and composition of materials. In characterizing a material, perhaps the most important special area of interest is the surface.
Book Synopsis Chemically Deposited Nanocrystalline Metal Oxide Thin Films by : Fabian I. Ezema
Download or read book Chemically Deposited Nanocrystalline Metal Oxide Thin Films written by Fabian I. Ezema and published by Springer Nature. This book was released on 2021-06-26 with total page 926 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book guides beginners in the areas of thin film preparation, characterization, and device making, while providing insight into these areas for experts. As chemically deposited metal oxides are currently gaining attention in development of devices such as solar cells, supercapacitors, batteries, sensors, etc., the book illustrates how the chemical deposition route is emerging as a relatively inexpensive, simple, and convenient solution for large area deposition. The advancement in the nanostructured materials for the development of devices is fully discussed.
Book Synopsis Thin Film Metal-Oxides by : Shriram Ramanathan
Download or read book Thin Film Metal-Oxides written by Shriram Ramanathan and published by Springer Science & Business Media. This book was released on 2009-12-03 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
Book Synopsis Advances in Solid State Circuit Technologies by : Paul Chu
Download or read book Advances in Solid State Circuit Technologies written by Paul Chu and published by BoD – Books on Demand. This book was released on 2010-04-01 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields.
Book Synopsis Resonant Tunneling in Semiconductors by : L.L. Chang
Download or read book Resonant Tunneling in Semiconductors written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Book Synopsis Materials Fundamentals of Gate Dielectrics by : Alexander A. Demkov
Download or read book Materials Fundamentals of Gate Dielectrics written by Alexander A. Demkov and published by Springer. This book was released on 2011-02-03 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy. Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given.