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Design Fabrication And Characterization Of Ultra High Speed Inp Gaassb Inp Double Heterojunction Bipolar Transistors
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Book Synopsis Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors by : Martin W. Dvorak
Download or read book Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors written by Martin W. Dvorak and published by . This book was released on 2001 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors by : James C. Vlcek
Download or read book The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors written by James C. Vlcek and published by . This book was released on 1985 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors by : Nick Gengming Tao
Download or read book Characterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors written by Nick Gengming Tao and published by . This book was released on 2006 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.
Book Synopsis Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits by : Urs Hammer
Download or read book Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits written by Urs Hammer and published by . This book was released on 2010 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs) by : 廖育資
Download or read book Fabrication and Characterization of Indium Phosphide (InP) Heterojunction Bipolar Transistors (HBTs) written by 廖育資 and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, Characterization and Simulation of High Performance Npn InGaP/GaAs Heterojunction Bipolar Phototransistors and Heterojunction Bipolar Transistors by : Ravi Sridhara
Download or read book Design, Fabrication, Characterization and Simulation of High Performance Npn InGaP/GaAs Heterojunction Bipolar Phototransistors and Heterojunction Bipolar Transistors written by Ravi Sridhara and published by . This book was released on 1997 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development of High-speed, Type-II, GaAsSb/InP, Double-heterojunction Bipolar Transistors by : Benjamin Chu-Kung
Download or read book Development of High-speed, Type-II, GaAsSb/InP, Double-heterojunction Bipolar Transistors written by Benjamin Chu-Kung and published by . This book was released on 1972 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Simulation and Modelling of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors by :
Download or read book Design, Simulation and Modelling of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector, which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work, the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Then the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design. The degradation of device performance at high currents due to the formation of a parasitic barrier in the collector region and the base push out effects is examined. Finally, a device structure with improved high frequency performance is described.
Book Synopsis Optimizations of Epilayer Structure Design and Fabrication Process on INP/GAASSB Double Heterojunction Bipolar Transistors by : Yuping Zeng
Download or read book Optimizations of Epilayer Structure Design and Fabrication Process on INP/GAASSB Double Heterojunction Bipolar Transistors written by Yuping Zeng and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of InP/InGaAs Metamorphic Heterojunction Bipolar Transistors (HBTs) by : Hong Yang
Download or read book Fabrication and Characterization of InP/InGaAs Metamorphic Heterojunction Bipolar Transistors (HBTs) written by Hong Yang and published by . This book was released on 2005 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of GaAs/GaAsSb Heterojunction Bipolar Transistors for Wireless Communication Applications by : I-Ning Ku
Download or read book Fabrication and Characterization of GaAs/GaAsSb Heterojunction Bipolar Transistors for Wireless Communication Applications written by I-Ning Ku and published by . This book was released on 2001 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Compositionally-graded Indium Phosphide Based Type-II Double Heterojunction Bipolar Transistors by : William K. Snodgrass
Download or read book Fabrication and Characterization of Compositionally-graded Indium Phosphide Based Type-II Double Heterojunction Bipolar Transistors written by William K. Snodgrass and published by . This book was released on 2007 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development and Optimization of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistors by : Maria Alexandrova
Download or read book Development and Optimization of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistors written by Maria Alexandrova and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP-Based Materials and Devices by : Osamu Wada
Download or read book InP-Based Materials and Devices written by Osamu Wada and published by Wiley-Interscience. This book was released on 1999-04-13 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
Book Synopsis A Heterojunction Bipolar Transistor with Stepwise Allog-graded Base by : Konstantinos Konistis
Download or read book A Heterojunction Bipolar Transistor with Stepwise Allog-graded Base written by Konstantinos Konistis and published by . This book was released on 2004 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) features but the device self-heating turned out to be crucial for the longevity of the base micro-airbridges. The short lifetime of the base micro-airbridges was prohibitive for the realization of high frequency measurements. This work serves as the foundation for the implementation of robust HBT transit-time oscillators with the incorporation of slight modifications in the fabrication process.
Book Synopsis A GaAsSb/InP HBT circuit technology by :
Download or read book A GaAsSb/InP HBT circuit technology written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) structure has been defined, realized by MBE epitaxy, and optimized, thanks to simulation based on in-depth physical characterizations. A circuit-oriented technology has been developed, which has been validated by the design and fabrication of a full-rate (40 GHz clock) 40 Gbit/s D-FF.
Book Synopsis Development of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistor and Their Application in Monolithic Microwave Integrated Circuits by : Wei Quan
Download or read book Development of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistor and Their Application in Monolithic Microwave Integrated Circuits written by Wei Quan and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
