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Design Fabrication And Characterization Of Modulation Doped Field Effect Transistors
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Book Synopsis Design, Fabrication, and Characterization of Modulation-doped Field-effect Transistors by : Hyunchang Park
Download or read book Design, Fabrication, and Characterization of Modulation-doped Field-effect Transistors written by Hyunchang Park and published by . This book was released on 1989 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Modulation Doped Field Effect Transistors for Quantum Waveguide Structures by : Wipawan Yindeepol
Download or read book Fabrication and Characterization of Modulation Doped Field Effect Transistors for Quantum Waveguide Structures written by Wipawan Yindeepol and published by . This book was released on 1990 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results. The performance of normal gate transistors was reasonable. The sheet carrier density and the mobility extracted from Hall measurements using the Hall bar geometry showed increase of carrier density with increasing gate voltage and an increase of mobility with increasing carrier density. The contact resistance obtained from the ohmic test structure was high and not uniform within the sample.
Book Synopsis Design, Fabrication and Characterization of Complementary Heterojunction Field Effect Transistors by : Terry E. McMahon
Download or read book Design, Fabrication and Characterization of Complementary Heterojunction Field Effect Transistors written by Terry E. McMahon and published by . This book was released on 1994 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Organic Field Effect Transistors by : Ioannis Kymissis
Download or read book Organic Field Effect Transistors written by Ioannis Kymissis and published by Springer Science & Business Media. This book was released on 2008-12-25 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Book Synopsis Design, Fabrication, and Characterization of Indium Phosphide-based Heterostructure Field-effect Transistors for High-power Microwave Applications by : Daniel Gerard Ballegeer
Download or read book Design, Fabrication, and Characterization of Indium Phosphide-based Heterostructure Field-effect Transistors for High-power Microwave Applications written by Daniel Gerard Ballegeer and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demonstrated microwave performance capabilities superior to those of GaAs-based and Si-based transistors. In particular, InGaAs/InAlAs modulation-doped field effect transistors (MODFETs) have exhibited world-record unity current gain frequencies ($fsb{t}$s) as well as extremely high power cutoff frequencies ($fsb{rm max}$s) and have, therefore, become the optimum devices for small-signal applications at high frequencies, particularly in low-noise applications. Despite these strengths, InP-based HFETs have inherent weaknesses which limit their capabilities for large-signal, high output power applications. Due to a combination of the poor Schottky characteristics of InAlAs, which is often the material in contact with the metal gate, and the small bandgap of InGaAs, which is the material often used for the channel, the devices typically have lower breakdown voltages than their GaAs counterparts. However, because of the phenomenally high values of $fsb{t}$ and $fsb{rm max}$ obtainable for these devices, there has been a growing desire to overcome these weaknesses in order that the devices can be used for high-power applications at microwave frequencies. The subject of this work is the investigation of the possibility of designing InP-based HFETs for use as high-power devices. The emphasis is not on obtaining a world-record high frequency power device; instead, the focus is on the critical issues involved when designing the devices for high power applications. Hence, the goal is to obtain an in-depth understanding of the internal physics of the FETs when they are operating as power devices, and in so doing, attempt to arrive at designs and techniques which will overcome some of the limitations of InP-based HFETs.
Book Synopsis Modulation Field Effect Transistor (MODFET) Test Site Design and Fabrication for Device Characterization by : Kevin Scott Stevens
Download or read book Modulation Field Effect Transistor (MODFET) Test Site Design and Fabrication for Device Characterization written by Kevin Scott Stevens and published by . This book was released on 1997 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms by : Paul Raymond De la Houssaye
Download or read book Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms written by Paul Raymond De la Houssaye and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 34 (thesis year 1989) a total of 13,377 theses titles from 26 Canadian and 184 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 34 reports theses submitted in 1989, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Author :Yuen-Shung Chieh Publisher :Ann Arbor, Mich. : University Microfilms International ISBN 13 : Total Pages :646 pages Book Rating :4.E/5 ( download)
Book Synopsis Design, Fabrication and Characterization of 100 Nm CMOS Devices by : Yuen-Shung Chieh
Download or read book Design, Fabrication and Characterization of 100 Nm CMOS Devices written by Yuen-Shung Chieh and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 1996 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication and Characterization of the Si Based Tailored Field Effect Transistor by : Pavan Vidyadhar Muzumdar
Download or read book Design, Fabrication and Characterization of the Si Based Tailored Field Effect Transistor written by Pavan Vidyadhar Muzumdar and published by . This book was released on 1991 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Characterization of InAs/AlSb Heterojunction Field-effect Transistors by : James David Werking
Download or read book Design, Fabrication, and Characterization of InAs/AlSb Heterojunction Field-effect Transistors written by James David Werking and published by . This book was released on 1993 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation-doped Field Effect Transistors for High-power Microwave Applications by : Ronald Waldo Grundbacher
Download or read book Modulation-doped Field Effect Transistors for High-power Microwave Applications written by Ronald Waldo Grundbacher and published by . This book was released on 1997 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for high-power, low-noise transistors operating at frequencies of 1GHz and above has accelerated over the past several years, because applications in consumer markets, including telecommunications products, have increased dramatically. Transistors in the silicon system are having difficulty providing the high-power, low-noise characteristics at operation above 1 GHz. Transistors based on InP and GaAs, which include HBTs, MESFETs, and HEMTs, have proven to be excellent devices and can provide high-power, low-noise capabilities at frequencies of 100 GHz and beyond. Issues of importance for high-power microwave transistors include breakdown mechanisms, linearity, and material selection.
Book Synopsis Design, Simulation and Construction of Field Effect Transistors by : Dhanasekaran Vikraman
Download or read book Design, Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Book Synopsis Design, Fabrication and Analysis of Diamond Field-effect Transistors by : Alison Joy Tessmer
Download or read book Design, Fabrication and Analysis of Diamond Field-effect Transistors written by Alison Joy Tessmer and published by . This book was released on 1995 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Characterization of InP-based Heterostructure Field-effect Transistors for High-power Microwave Applications by : Daniel Gerard Ballegeer
Download or read book Design, Fabrication, and Characterization of InP-based Heterostructure Field-effect Transistors for High-power Microwave Applications written by Daniel Gerard Ballegeer and published by . This book was released on 1995 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications by : Allen Nicholas Lepore
Download or read book Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications written by Allen Nicholas Lepore and published by . This book was released on 1988 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, Characterization, and Modeling of Novel Ultra Low Power Heterodimensional Field Effect Transistors by : Michael J. Hurt
Download or read book Design, Fabrication, Characterization, and Modeling of Novel Ultra Low Power Heterodimensional Field Effect Transistors written by Michael J. Hurt and published by . This book was released on 1998 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: