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Design Fabrication And Characterization Of 100 Nm Cmos Devices
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Author :Yuen-Shung Chieh Publisher :Ann Arbor, Mich. : University Microfilms International ISBN 13 : Total Pages :646 pages Book Rating :4.E/5 ( download)
Book Synopsis Design, Fabrication and Characterization of 100 Nm CMOS Devices by : Yuen-Shung Chieh
Download or read book Design, Fabrication and Characterization of 100 Nm CMOS Devices written by Yuen-Shung Chieh and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 1996 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Characterization of W/SiGe/Si Raised Single Source/drains for Sub-100nm CMOS and Sub-70nm Fully Self-aligned Double-gate CMOS by : Dong Gan
Download or read book Design, Fabrication, and Characterization of W/SiGe/Si Raised Single Source/drains for Sub-100nm CMOS and Sub-70nm Fully Self-aligned Double-gate CMOS written by Dong Gan and published by . This book was released on 2000 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Characterization of Tungsten/silicon Germanium/silicon Raised Single Source/drains for Sub-100nm CMOS and Sub-70nm Fully Self-aligned Double-gated CMOS. by : Dong Gan
Download or read book Design, Fabrication, and Characterization of Tungsten/silicon Germanium/silicon Raised Single Source/drains for Sub-100nm CMOS and Sub-70nm Fully Self-aligned Double-gated CMOS. written by Dong Gan and published by . This book was released on 2000 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the continuation of CMOS device scaling to sub-100nm generations, one of the key challenges is to produce abruptly doped ultra-shallow source/drain junctions with low series resistance for maximum short channel effect (SCE) immunity and high current drive. The W/SiGe/Si raised single source/drain structure would ultimately provide a source/drain contact resistivity of 1--3 x 10-8 O-cm2 and a junction depth less than 30nm. Process integration for W/SiGe/Si into raised single source/drains in sub-100nm CMOS has been developed. Processes developed include sub-100nm gate and source/drain patterning, thin sidewall spacer control, CMP of blanket polycrystalline Si0.7Ge0.3, selective W CVD, and CMP of blanket W CVD. Silicon nitride sidewall spacers as thin as 14nm were achieved with low leakage currents. Good diode characteristics have been measured for P+/N W/SiGe/Si diodes, and N+/P SiGe/Si diodes. Ideality factors are 1.04 and 1.10, respectively. CMOS device characteristics were demonstrated for long channel PMOS with W/SiGe/Si raised source/drains and 200nm NMOS with SiGe/Si raised source/drains. The W/SiGe/Si raised single source/drains can be further extended well below the 100nm CMOS node.
Book Synopsis Design, Fabrication, and Characterization of Shallow Trench Isolation and Raised Source/drains for 100NM CMOS by : Peter Jon VanDerVoorn
Download or read book Design, Fabrication, and Characterization of Shallow Trench Isolation and Raised Source/drains for 100NM CMOS written by Peter Jon VanDerVoorn and published by . This book was released on 1998 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Design, Fabrication and Characterization of Independent-gate FINFETS by : David Michael Fried
Download or read book The Design, Fabrication and Characterization of Independent-gate FINFETS written by David Michael Fried and published by . This book was released on 2004 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Manufacturing Design and Fabrication of 100 Nm (Leff) CMOS Devices by : Samarth Parikh
Download or read book Manufacturing Design and Fabrication of 100 Nm (Leff) CMOS Devices written by Samarth Parikh and published by . This book was released on 2014 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A CMOS process for fabricating 100 nm CMOS devices has been developed. The Leff = 100 nm NMOS and PMOS transistors are the smallest ever that have been fabricated at RIT. The process is designed with Lpoly = 0.15 [micron] on 150 mm (6") Silicon wafers. The NMOS and PMOS transistors are designed to operate at 1.2 V supply voltage and exhibit 0.3 V threshold voltage. 30 Å silicon-dioxide gate dielectric with Nitrous Oxide (N2O), was found to be very thin for the first lot of 100 nm devices to operate. Individual process have been developed which include recessed oxide isolation, 30 Å gate oxide with N2O, polysilicon gate formation involving double exposure of polysilicon gate, nitride sidewall spacer formation, SALICIDE formation, precise contact cuts formation and metallization. All these individual processes have been developed and integrated into a 65 step CMOS process flow. Recipes have been developed for all process steps on variety of tools in the SMFL. The entire process has been updated on Manufacturing Execution System Application (MESA) as the ADV-CMOS 150 process which include instruction sets, specification ID's, parameter groups, and document groups making it feasible for the same process to replicated in the future. Lots are fabricated and imperfections in the process are identified and fixed. Electrical sheet resistance results are compared to simulation results."--Abstract.
Book Synopsis Engineering the CMOS Library by : David Doman
Download or read book Engineering the CMOS Library written by David Doman and published by John Wiley & Sons. This book was released on 2012-05-29 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Shows readers how to gain the competitive edge in the integrated circuit marketplace This book offers a wholly unique perspective on the digital design kit. It points to hidden value in the safety margins of standard-cell libraries and shows design engineers and managers how to use this knowledge to beat the competition. Engineering the CMOS Library reveals step by step how the generic, foundry-provided standard-cell library is built, and how to extract value from existing std-cells and EDA tools in order to produce tighter-margined, smaller, faster, less power-hungry, and more yield-producing integrated circuits. It explores all aspects of the digital design kit, including the different views of CMOS std-cell libraries along with coverage of IO libraries, memory compilers, and small analog blocks. Readers will learn: How to work with overdesigned std-cell libraries to improve profitability while maintaining safety How functions usually found in std-cell libraries cover the design environment, and how to add any missing functions How to harness the characterization technique used by vendors to add characterization without having to get it from the vendor How to use verification and validation techniques to ensure proper descriptive views and even fix inconsistencies in vendor release views How to correct for possible conflicts arising from multiple versions and different vendor sources in any given integrated circuit design Complete with real-world case studies, examples, and suggestions for further research, Engineering the CMOS Library will help readers become more astute designers.
Book Synopsis Design, Fabrication, and Characterization of High Performance III-V NMOSFETs for VLSI Beyond Si-CMOS Scaling Limit by : Sanghoon Lee
Download or read book Design, Fabrication, and Characterization of High Performance III-V NMOSFETs for VLSI Beyond Si-CMOS Scaling Limit written by Sanghoon Lee and published by . This book was released on 2014 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: In order to achieve device performances close to the idealized target, several critical requirements must be met. Firstly, the high-k gate dielectric must be ultra-thin (equivalent oxide thickness
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2002 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Mangan, Alain Marc Publisher :Library and Archives Canada = Bibliothèque et Archives Canada ISBN 13 :9780494072691 Total Pages :188 pages Book Rating :4.0/5 (726 download)
Book Synopsis Millimetre-wave Device Characterization for Nano-CMOS IC Design [microform] by : Mangan, Alain Marc
Download or read book Millimetre-wave Device Characterization for Nano-CMOS IC Design [microform] written by Mangan, Alain Marc and published by Library and Archives Canada = Bibliothèque et Archives Canada. This book was released on 2005 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the 90-nm node, silicon technologies have reached a point where the transistor fT and f MAX simultaneously exceed 150 GHz, with a 1.2 V supply. With low fabrication costs for high volumes of circuits, RF-CMOS technologies are ideally suited to realize exciting new high bandwidth consumer products that operate in the mm-wave regime. Before this can happen, models of both active and passive devices will require a high degree of accuracy from DC, all the way up to mm-wave frequencies. This thesis presents new techniques that help leverage the power of measurements to characterize and model devices of nano-CMOS technologies well into the mm-wave regime. In particular, two new de-embedding techniques are devised in order to improve measurement accuracy, and reduce wafer area consumption. Moreover, the measured characteristics of various microstrip lines, varactors, and n-MOSFETs fabricated in a 90-nm RF-CMOS technology are analyzed in order to identify optimal geometries for high frequency design. An extraction methodology for a scalable physical model of accumulation-mode MOS varactors is also included.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Security Opportunities in Nano Devices and Emerging Technologies by : Mark Tehranipoor
Download or read book Security Opportunities in Nano Devices and Emerging Technologies written by Mark Tehranipoor and published by CRC Press. This book was released on 2017-11-22 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research community lacks both the capability to explain the effectiveness of existing techniques and the metrics to predict the security properties and vulnerabilities of the next generation of nano-devices and systems. This book provides in-depth viewpoints on security issues and explains how nano devices and their unique properties can address the opportunities and challenges of the security community, manufacturers, system integrators, and end users. This book elevates security as a fundamental design parameter, transforming the way new nano-devices are developed. Part 1 focuses on nano devices and building security primitives. Part 2 focuses on emerging technologies and integrations.
Book Synopsis Design, Fabrication, Test and Optimization of CMOS Devices as Fully Integrable Optical Silicon Sources by : Joan Manel Ramírez Ramírez
Download or read book Design, Fabrication, Test and Optimization of CMOS Devices as Fully Integrable Optical Silicon Sources written by Joan Manel Ramírez Ramírez and published by . This book was released on 2011 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanometer CMOS written by Juin J. Liou and published by CRC Press. This book was released on 2010-02-28 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Book Synopsis Design and Characterization of Silicon CMOS Devices for Radio-frequency Integrated Circuits by :
Download or read book Design and Characterization of Silicon CMOS Devices for Radio-frequency Integrated Circuits written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: HKUST Call Number: Thesis ELEC 2001 LamS.
Book Synopsis Compact MOSFET Models for VLSI Design by : A. B. Bhattacharyya
Download or read book Compact MOSFET Models for VLSI Design written by A. B. Bhattacharyya and published by John Wiley & Sons. This book was released on 2009-07-23 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya
Download or read book CMOS written by R. Jacob Baker and published by John Wiley & Sons. This book was released on 2008 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edition provides an important contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and more. The authors develop design techniques for both long- and short-channel CMOS technologies and then compare the two.
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