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Design And Fabrication Of Gallium Arsenide Aluminum Gallium Arsenide Two Mode Cross Coupled Bistable Laser Diodes For Optical Switching And Memory Applications
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Book Synopsis Design and Fabrication of Gallium Arsenide-aluminum Gallium Arsenide Two-mode Cross-coupled Bistable Laser Diodes for Optical Switching and Memory Applications by : John Evan Johnson
Download or read book Design and Fabrication of Gallium Arsenide-aluminum Gallium Arsenide Two-mode Cross-coupled Bistable Laser Diodes for Optical Switching and Memory Applications written by John Evan Johnson and published by . This book was released on 1993 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Fabrication of a Monolithic Two-mode Optical Flip-flop by : Bin Jian
Download or read book Design and Fabrication of a Monolithic Two-mode Optical Flip-flop written by Bin Jian and published by . This book was released on 1997 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Bistability and Unidirectionality in Triangular Ring Diode Lasers by : Michael Francis Booth
Download or read book Bistability and Unidirectionality in Triangular Ring Diode Lasers written by Michael Francis Booth and published by . This book was released on 2000 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1993 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications by : Luca Redaelli
Download or read book Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications written by Luca Redaelli and published by Cuvillier Verlag. This book was released on 2013-12-11 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, several aspects concerning (In,Al,Ga)N laser diodes with high spectral purity, designed for applications in spectroscopy, were studied. A complete fabrication process for ridgewaveguide laser diodes on GaN substrate was developed. The lateral size of the ridge waveguides was as narrow as 1.5 μm: this is necessary in order to achieve lateral single-mode lasing in (In,Al,Ga)N laser diodes. A peculiar property of (In,Al,Ga)N laser diodes is that, when the ridge is narrow, the threshold current strongly depends on the ridge etch depth. This phenomenon was investigated by fabricating laser diodes with different etch depths. For ridge widths below 2 μm, the threshold current of shallow-ridge devices was found to be more than two times larger than that of comparable deep-ridge devices. Moreover, in the lateral far-field patterns of shallow-ridge laser diodes, side-lobes were observed, which would support the hypothesis of strong index-antiguiding. The antiguiding factor at threshold was experimentally determined to be about 10, which is among the largest values ever published for (In,Al,Ga)N laser diodes. The devices were further studied by simulation, and the results confirmed that the carrier-induced index change in the quantum wells can compensate the lateral index step if the ridge is shallow. This, in turn, reduces the lateral optical confi nement, which increases the threshold current and generates side lobes in the far-fi eld patterns. Based on this research, blue and violet laser diodes suitable for packaging in TO cans and continuous-wave (CW) operation exceeding 50 mW were fabricated. An external cavity diode laser (ECDL) was also realized, which could be tuned over the spectral range 435 nm - 444 nm and provided a peak emission power of more than 27 mW CW at 439 nm. As an alternative approach to obtain a narrow spectral linewidth, the feasibility of monolithically integrated Bragg-gratings was studied.
Book Synopsis Manufacturability of Gallium Arsenide/aluminum Gallium Arsenide Lasers Grown by Molecular Beam Epitaxy by : Sridhar V. Iyer
Download or read book Manufacturability of Gallium Arsenide/aluminum Gallium Arsenide Lasers Grown by Molecular Beam Epitaxy written by Sridhar V. Iyer and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-power graded index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy depends primarily on the quality of $Alsb{x}Gasb{1-x}As$ layers, the interface roughness, and the control of residual oxygen incorporation into the active region. Based on MBE growth experiments, a model for the incorporation, desorption and accumulation of oxygen during epitaxial growth of optical quality AlGaAs layers is proposed and validated. Based on this model, an optimal growth scheme for MBE grown GaAs/AlGaAs lasers is demonstrated. Over the growth of approximately one hundred and fifty lasers in a concurrent research, development, and manufacturing environment, the reduction of residual oxygen incorporation in GRINSCH-SQW lasers was found to be in excellent correlation with lower threshold density, higher quantum well photoluminesence intensity, and secondary ion mass spectroscopy data. The high growth temperatures required to prevent oxygen incorporation in the quantum well result in additional technical obstacles stymieing full exploitation of the growth technology for use in the manufacture of integrated opto-electronic circuits and systems. The inherent difficulties in accurately measuring growth temperature in MBE systems and the gallium desorption during high temperature growth can lead to nonuniformities in cladding material composition. These nonuniformities can lead to an asymmetrical waveguiding structure with distorted optical output characteristics. Distortions in the radiated optical pattern can greatly affect the alignment and coupling efficiency between laser diodes and optical fibers or other electro-optical systems in integrated opto-electronic applications. A two-dimensional dielectric waveguide simulator has been used to analyze the optical properties of GRINSCH GaAs/AlGaAs lasers with asymmetrical cladding structures induced by noise in growth temperature measurement. Through this analysis, an optimal device structure which has the desired optical characteristics and is less sensitive to cladding composition asymmetries is demonstrated.
Book Synopsis The Fabrication of Double Heterostructure Aluminum Gallium Arsenide/gallium Arsenide Lasers by Molecular Beam Epitaxy by : Timothy James Drummond
Download or read book The Fabrication of Double Heterostructure Aluminum Gallium Arsenide/gallium Arsenide Lasers by Molecular Beam Epitaxy written by Timothy James Drummond and published by . This book was released on 1982 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today there exists a need to be able to process increasing amounts of data at rates beyond the capabilities of existing purely electrical networks. To meet this need, networks which transmit data via an optical carrier rather than an electrical one are being developed. A necessary component of an optical network is a small, easily modulated source of coherent light. The only such source available is a laser diode. The first laser diode to operate continuously at room temperature was a double heterostructure (DH) (Al, Ga)As/GaAs laser prepared by liquid phase epitaxy (LPE). Much effort was subsequently devoted to reproducing those results by molecular beam epitaxy (MBE). MBE offers several advantages over LPE, such as control of composition and impurity profiles to atomic dimensions. Layers cna be grown on larger substrates and with a high degree of uniformity and reproducibility that is not possible with LPE. Despite these advantages, it was six years after the first continuous room temperature operation of an (Al, Ga)As/GaAs DH laser that a similar laser prepared by MBE was reported. The first MBE lasers typically had threshold current densities, Jth, about twice as large as similarly designed LPE lasers. Another three years passed before the art of MBE advanced to the point where it became possible to achieve laser performance equal to the LPE lasers. The presence of non-radiative recombination centers in the bulk (Al, Ga)As layers was shown to make a significant contribution to the high threshold current densities in MBE lasers.
Book Synopsis Fabrication and Characterization of Gallium Arsenide/aluminum Gallium Arsenide Semiconductor Ring Laser for Realization of Miniature Gyroscope by : Jay Prakash Gupta
Download or read book Fabrication and Characterization of Gallium Arsenide/aluminum Gallium Arsenide Semiconductor Ring Laser for Realization of Miniature Gyroscope written by Jay Prakash Gupta and published by ProQuest. This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: There is demand for a robust, compact and sensitive gyroscope which can be utilized as a navigational tool for modern commercial and military applications, as well as there is a need of constant improvement in performance and reduction in bulk and weight of the gyroscope at the same time. A compact integrated design based on semiconductor materials has the highest hope of meeting the measurement conditions for military and commercial applications as well as providing the potential for low cost, high volume manufacturing. To this end, my work focuses on fabrication and characterization of one of the key elements of a GaAs / AlGaAs semiconductor ring laser (SRL) gyroscope, SRL. The goal of the thesis is to fabricate a SRL with characteristics required for its use in a SRL gyroscope. In this thesis, I first describe the working principle of the SRL gyroscope. The lock-in in the SRL is explained and an approach to break the lock-in is described. Then the effort put into the fabrication of SRL, problems faced and methods used to rectify them is described in detail. Afterwards, I explain the test setup built to characterize the fabricated SRLs. Finally, I quantify the results obtained by characterizing the fabricated structures and research to follow in the future.
Book Synopsis Bistabilities and Nonlinearities in Laser Diodes by : Hitoshi Kawaguchi
Download or read book Bistabilities and Nonlinearities in Laser Diodes written by Hitoshi Kawaguchi and published by Artech House Optoelectronics L. This book was released on 1994 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: With outstanding tutorials and crystal-clear explanations, this book provides complete coverage of the field -- guiding you from basic physics to modern design applications for optical communications and photonic switching.
Book Synopsis Gallium Arsenide Lasers by : C. H. Gooch
Download or read book Gallium Arsenide Lasers written by C. H. Gooch and published by John Wiley & Sons. This book was released on 1969 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication of Gallium Arsenide Subnanosecond Switching Diode by : Stanford University. Stanford Electronics Laboratories
Download or read book Fabrication of Gallium Arsenide Subnanosecond Switching Diode written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1962 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Analysis of a Gallium Arsenide Laser Diode by : Thomas John Curry
Download or read book Fabrication and Analysis of a Gallium Arsenide Laser Diode written by Thomas John Curry and published by . This book was released on 1966 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Optical Characterization of Gallium Arsenide Aluminum Arsenide Material System Reflective Modulators for Mid-infrared Free Space Optical Applications Using Solid-source Molecular Beam Epitaxy by : Stanley Ikpe
Download or read book Design and Optical Characterization of Gallium Arsenide Aluminum Arsenide Material System Reflective Modulators for Mid-infrared Free Space Optical Applications Using Solid-source Molecular Beam Epitaxy written by Stanley Ikpe and published by . This book was released on 2013 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the ever-growing usage of free space optical communication implementations, new innovations are currently being made to help improve the quality of transmission of these systems. One particular method employed to help improve transmission efficiency of optical links is shifting the transmission wavelength into the mid-infrared spectrum. Studies have shown sufficient increase in atmospheric transmission at and around mid-infrared wavelengths (near 3-5 mm). In order to successfully implement such systems at these wavelengths, devices must first be designed that are capable of optical communication operation at such wavelengths. One such device common in modern free space optical systems is the reflective modulator. This device minimizes the pointing and tracking associated with establishing free space optical connections. In this dissertation, a free space optical reflective modulator is designed using Gallium Arsenide and Aluminum Arsenide (GaAs/AlAs) to operate at midinfrared transmission wavelengths. The reflective modulator consists of multiple quantum well modulator (QWM) atop of a distributed Bragg reflector (DBR). The physical device characteristics are analyzed and the device functionality evaluated using optical characterization techniques.
Book Synopsis The Design, Fabrication, and Characterization of High-performance Self-aligned Gallium Arsenide/aluminum Gallium Arsenide and Gallium Arsenide/gallium Indium Arsenide/aluminum Gallium Arsenide Heterojunction Bipolar Transistors by : Dean Winston Barker
Download or read book The Design, Fabrication, and Characterization of High-performance Self-aligned Gallium Arsenide/aluminum Gallium Arsenide and Gallium Arsenide/gallium Indium Arsenide/aluminum Gallium Arsenide Heterojunction Bipolar Transistors written by Dean Winston Barker and published by . This book was released on 1989 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis HIGH-POWER GALLIUM ARSENIDE LASER DIODES. by : L. Wandinger
Download or read book HIGH-POWER GALLIUM ARSENIDE LASER DIODES. written by L. Wandinger and published by . This book was released on 1965 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: The essential features in the design, development, and performance of GaAs p-n junction laser diodes with high output in the coherent beam for application in secure communication systems are discussed. After a brief review of device design principles, the technology of wafer preparation, diffusion of extremely planar p-n junctions and the formation of ohmic, low resistance, area contacts developed at this Command is presented. Measurement techniques to determine the performance characteristics of these lasers such as threshold current density, output power, external quantum efficiency, spectral distribution and linewidth of emitted radiation are discussed. Experimental units with a total average power output in the coherent beam of more than three watts corresponding to a quantum efficiency of 15 percent have been made. (Author).
Book Synopsis Dynamic Characteristics of Aluminum Gallium Arsenide-gallium Arsenide Conventional and Quantum-well Double-heterostructure Laser Diodes by : Eric Rune Anderson
Download or read book Dynamic Characteristics of Aluminum Gallium Arsenide-gallium Arsenide Conventional and Quantum-well Double-heterostructure Laser Diodes written by Eric Rune Anderson and published by . This book was released on 1981 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide Phosphide Injection Laser Diodes by : Carl J. Magee
Download or read book Gallium Arsenide Phosphide Injection Laser Diodes written by Carl J. Magee and published by . This book was released on 1967 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
