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Design And Demonstration Of Low Loss And High Power Switching Devices Using Wide Bandgap Gallium Nitride And Silicon Carbide Based Technology
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Book Synopsis Design and Demonstration of Low-loss and High-power Switching Devices Using Wide Bandgap Gallium Nitride and Silicon Carbide Based Technology by : Young Chul Chois
Download or read book Design and Demonstration of Low-loss and High-power Switching Devices Using Wide Bandgap Gallium Nitride and Silicon Carbide Based Technology written by Young Chul Chois and published by . This book was released on 2007 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga
Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Book Synopsis Design of a Silicon and Wide-bandgap Device Based Hybrid Switch for Power Electronics Converter by : Amol Rajendrakumar Deshpande
Download or read book Design of a Silicon and Wide-bandgap Device Based Hybrid Switch for Power Electronics Converter written by Amol Rajendrakumar Deshpande and published by . This book was released on 2016 with total page 59 pages. Available in PDF, EPUB and Kindle. Book excerpt: A high efficiency and high power density power electronics converter would deliver more power at low weight and volume. This is highly desirable for applications such as More Electric Aircrafts. A silicon (Si) IGBT based converter cannot achieve this goal due to limited switching frequency of 20 kHz. On other hand, fast switching wide-bandgap (WBG) devices such as silicon carbide (SiC) MOSFET/JFET or Gallium Nitride (GaN) HEMT cannot directly replace Si IGBT due to limited die sizes and high costs. Thus, a hybrid switch (HyS) with paralleled large Si IGBT die and small WBG die is proposed for hard switching converters. It has inherent low conduction loss. Innovative gate control allows low switching loss and switching frequency as high as 78 kHz in HyS based converters. This proportionally reduces passive components’ size. A parametric study is done to determine a boundary condition for the best gate control option from possible options in the presence of the parasitic interconnect inductance. A Si/WBG die size ratio optimization algorithm is proposed, with this the thermal management system can be further relaxed to achieve the goal of low weight and volume.
Book Synopsis Performance of Wide Band Gap Switching Devices in DC/DC Converters of Electric Vehicles by : Yosra Attia
Download or read book Performance of Wide Band Gap Switching Devices in DC/DC Converters of Electric Vehicles written by Yosra Attia and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low losses fast switching wide band gap (WBG) semiconductors, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are becoming viable candidates for DC/DC converters switches in the powertrain of electric vehicle (EV). Thanks to the technology advancements, WBG power transistors are available now in the market with competing loss levels. In this research, the need for such devices to boost the system efficiency for extended vehicle mileage is justified. Case studies comparing the performance of the available options are presented, for the first time. The performance, motoring and regenerative braking, is studied at different junction temperatures. The results reported higher power density and increased car mileage using WBG semiconductors. These findings were consistent in automotive Nissan Leaf electric vehicle (NLEV) case and a Bombardier metro rail car, to provide the authentication of the developed plug-and-play model. Simulation and Experimental results were given to highlight the merits of the work.
Book Synopsis Wide Bandgap (SiC/GaN) Power Devices Characterization and Modeling by : Ke Li
Download or read book Wide Bandgap (SiC/GaN) Power Devices Characterization and Modeling written by Ke Li and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compared to traditional silicon (Si) semiconductor material, wide bandgap (WBG) materials like silicon carbide (SiC) and gallium nitride are gradually applied to fabricate power semiconductor devices, which are used in power converters to achieve high power efficiency, high operation temperature and high switching frequency. As those power devices are relatively new, their characterization and modeling are important to better understand their characteristics for better use. This dissertation is mainly focused on those WBG power semiconductor devices characterization, modeling and fast switching currents measurement. In order to measure their static characteristics, a single-pulse method is presented. A SiC diode and a "normally-off" SiC JFET is characterized by this method from ambient temperature to their maximal junction temperature with the maximal power dissipation around kilowatt. Afterwards, in order to determine power device inter-electrode capacitances, a measurement method based on the use of multiple current probes is proposed and validated by measuring inter-electrode capacitances of power devices of different technologies. Behavioral models of a Si diode and the SiC JFET are built by using the results of the above characterization methods, by which the evolution of the inter-electrode capacitances for different operating conditions are included in the models. Power diode models are validated with the measurements, in which the current is measured by a proposed current surface probe.
Book Synopsis Gallium Nitride And Silicon Carbide Power Devices by : B Jayant Baliga
Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies 8 by : M. Dudley
Download or read book Gallium Nitride and Silicon Carbide Power Technologies 8 written by M. Dudley and published by The Electrochemical Society. This book was released on 2018-09-21 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis On the Stability of Circuits Switched by Wide Band-gap Power Semiconductor Devices by :
Download or read book On the Stability of Circuits Switched by Wide Band-gap Power Semiconductor Devices written by and published by . This book was released on 2013 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: The commercialization of wide band-gap devices such as silicon carbide and gallium nitride transistors has made it possible for power electronics applications to achieve unprecedented performance in terms of efficiency and power density. However, the device characteristics which make this performance possible also create secondary consequences in these high-performance applications. One such consequence which is particularly difficult to manage in the context of power electronics applications is the occurrence of self-sustained oscillation. This problem has been recognized in the power electronics literature, but heretofore has not received an extensive analytical treatment. This dissertation provides a comprehensive analytical treatment of the self sustained oscillation phenomenon, logically separated into two components: an initial forced cycle and the subsequent oscillatory behavior. A large-signal model has been developed in order to predict the occurrence of the initial forced cycle based on a set of estimated initial conditions derived from a user-specified operating point. The establishment of the initial forced cycle as predicted by the large-signal model creates the bias conditions necessary for the analytical treatment of the subsequent oscillatory behavior. For this purpose, a small-signal model is presented which describes this phenomenon on the basis of recognizing the wide band-gap device and a minimal set of parasitic components associated with the gate and drain circuits as an unintended negative conductance oscillator. In the context of established oscillator design theory it has been shown both analytically and with simulation that negative differential conductance exhibited by the parasitic model explains the conditions under which selfsustained oscillation is likely to occur. Both the large-signal and small-signal models are shown to demonstrate good agreement with empirical results from pulsed switching experiments obtained over a wide range of operating conditions. In addition, a catalog of known solutions to the problem of self-sustained oscillation is presented, along with a discussion of a method by which the current work can be used by application designers to preclude the occurrence of this phenomenon in practical systems by design.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies by : K. Shenai
Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by K. Shenai and published by The Electrochemical Society. This book was released on 2011 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu
Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Book Synopsis Thermal Reliability of Power Semiconductor Device in the Renewable Energy System by : Xiong Du
Download or read book Thermal Reliability of Power Semiconductor Device in the Renewable Energy System written by Xiong Du and published by Springer Nature. This book was released on 2022-07-08 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing reliability improvement techniques. This book is a valuable reference for the students and researchers who pay attention to the thermal reliability design of power semiconductor device.
Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga
Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Book Synopsis Fast-switching Monolithically Integrated High-voltage GaN-on-Si Power Converters by : Beatrix Weiß
Download or read book Fast-switching Monolithically Integrated High-voltage GaN-on-Si Power Converters written by Beatrix Weiß and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The lateral, high-voltage aluminum gallium nitride (AlGaN)/GaN-on-silicon (Si) technology allows the design of efficient, fast switching high-voltage transistors due to the excellent physical properties of the wide bandgap material GaN and the high conductivity of the AlGaN/GaN heterojunction. Furthermore, the lateral structure of this technology facilitates the integration of multiple power devices and control logic on a single die without additional complex processing steps compared to single switches. Both attributes together allow the design of switches and integrated circuits (ICs) with high power densities for operation at high switching frequencies, and thus enable the reduction of the overall power converter size. This work investigates and demonstrates the potential of monolithic integration of multiple power switches, fabricated in a AlGaN/GaN-on-Si technology. The associated challenges are examined, and guidelines for further developments are proposed. It is shown that only with monolithic integration and appropriate assembly techniques, the full potential of this high-performance, cost-efficient material compound can be released. Monolithically integrated circuits show outstanding performance for fast switching operation due to low intrinsic parasitics resulting from the compact design. Combined with the development of appropriate assembly techniques, high-frequency, high-power converter operation of GaN-power ICs is enabled. In this work two topologies are integrated and their operation demonstrated: the most widely used intrinsic power electronics topology - a half-bridge - and a more complex diode-clamped multilevel converter topology. Compared to vertical devices, lateral switches possess an additional degree of freedom: the control via the backside contact. The voltage control at this contact is important for keeping high performance of the power switches over a wide operating range. Thus, the influence of high positive and negative voltages across the GaN-buffer on the conductivity of the device is systematically investigated. For the first time, it is demonstrated that the coupling across this substrate contact is the major issue for high-voltage, monolithically integrated circuits, which share a common substrate. Finally, the detailed analysis allows the operation of the two developed GaN-ICs for switching frequencies of up to 5 MHz, at high-voltage levels of up to 400 V, at power levels of u ...
Book Synopsis Gallium-Nitride-Based Power Electronic Converter Design, Prototyping and Testing for Automotive Power Management and Renewable Energy Applications by : Shayan Dargahi
Download or read book Gallium-Nitride-Based Power Electronic Converter Design, Prototyping and Testing for Automotive Power Management and Renewable Energy Applications written by Shayan Dargahi and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Book Synopsis Photovoltaic Power System by : Weidong Xiao
Download or read book Photovoltaic Power System written by Weidong Xiao and published by John Wiley & Sons. This book was released on 2017-05-05 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic Power System: Modelling, Design and Control is an essential reference with a practical approach to photovoltaic (PV) power system analysis and control. It systematically guides readers through PV system design, modelling, simulation, maximum power point tracking and control techniques making this invaluable resource to students and professionals progressing from different levels in PV power engineering. The development of this book follows the author's 15-year experience as an electrical engineer in the PV engineering sector and as an educator in academia. It provides the background knowledge of PV power system but will also inform research direction. Key features: Details modern converter topologies and a step-by-step modelling approach to simulate and control a complete PV power system. Introduces industrial standards, regulations, and electric codes for safety practice and research direction. Covers new classification of PV power systems in terms of the level of maximum power point tracking. Contains practical examples in designing grid-tied and standalone PV power systems. Matlab codes and Simulink models featured on a Wiley hosted book companion website.
