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Author : James Howard Beberman
Publisher :
ISBN 13 :
Total Pages : 34 pages
Book Rating : 4.:/5 (155 download)
Download or read book Deposition and Characterization of Hydrogenated Amorphous Silicon written by James Howard Beberman and published by . This book was released on 1986 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Cheng Wang
Publisher :
ISBN 13 :
Total Pages : 400 pages
Book Rating : 4.:/5 (253 download)
Download or read book Deposition and Characterization of Hydrogenated Amorphous Silicon, Microcrystalline Silicon and Silicon Based Alloy Thin Films written by Cheng Wang and published by . This book was released on 1991 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Matthew Alan Ring
Publisher :
ISBN 13 :
Total Pages : 94 pages
Book Rating : 4.:/5 (527 download)
Download or read book Growth and Characterization of Hydrogenated Amorphous Silicon Prepared Using a Combined Hot Wire and Electron Cyclotron Resonance Plasma Deposition Technique written by Matthew Alan Ring and published by . This book was released on 2003 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.
Author : Alan Mark Myers
Publisher :
ISBN 13 :
Total Pages : 588 pages
Book Rating : 4.:/5 (261 download)
Download or read book Characterization of the Growth Flux During the Deposition of Hydrogenated Amorphous Silicon by DC Magnetron Reactive Sputtering written by Alan Mark Myers and published by . This book was released on 1991 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive study of the species impinging on the a-Si:H surface during growth by dc magnetron reactive sputtering using a silicon target in an Ar plus H$sb{rm2}$ plasma is reported. Mass spectrometry, plasma probes, and computer simulations are utilized to determine the identities, fluxes, and energies of all species which are present during high-quality film growth. A new technique, Double Modulated Beam Mass Spectrometry (DMMS) has been developed to determine the identities and energy distributions of neutral and ion species; DMMS has a signal-to-noise ratio which is over one hundred times greater than conventional techniques during the measurement of energetic species. Plasma probe measurements indicate a considerable plasma density near the substrate, with a total ion flux to the growth surface comparable to the arriving deposition flux. The total energy and angular distributions of the sputtered species arriving at the substrate were obtained using fractal TRIM and Monte Carlo simulations of particle transport. The growth flux reaching the substrate is shown to be sensitive to the nascent sputtered particle distribution and gas-phase scattering potential. These simulations show that the energy distribution of depositing Si atoms is strongly dependent on not only the substrate position and orientation with respect to the target, but also on the argon gas pressure. For typical deposition conditions, the average energy was 9.7 eV, while the median energy was 4.2 eV. The reflected H flux was found to have a broad energy distribution, with an average energy of 145 eV. The computer simulation was also used to predict the physical sticking coefficient of the depositing species. All of the above techniques are combined to estimate the magnitudes of the fluxes of the various sources of reactive H to the growth surface, and the energy deposited into the film.
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Final Report, 1 January 1979-31 May 1980 written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiHx stretching mode at approximately 2000 cm−1. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK).
Author : Pio Capezzuto
Publisher : Elsevier
ISBN 13 : 0080539106
Total Pages : 339 pages
Book Rating : 4.0/5 (85 download)
Download or read book Plasma Deposition of Amorphous Silicon-Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
Author : Hasbullah Anthony Hasbi
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (96 download)
Download or read book Structural Properties of Hydrogenated Amorphous Silicon (a-Si:H) Thin Film Grown Via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) written by Hasbullah Anthony Hasbi and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Hack
Publisher : Materials Research Society
ISBN 13 : 9781558993716
Total Pages : 0 pages
Book Rating : 4.9/5 (937 download)
Download or read book Amorphous and Microcrystalline Silicon Technology - 1997: Volume 467 written by Michael Hack and published by Materials Research Society. This book was released on 1997-12-03 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: While the original focus of this long-standing series from the Materials Research Society was on hydrogenated amorphous silicon, the symposia have now expanded to incorporate microcrystalline silicon. The two, in fact, are very closely connected since the latter material can be grown by making comparatively small changes to the deposition conditions for amorphous silicon. This book offers an interesting variety of papers on deposition techniques, materials properties, characterization methods and devices - nearly all focused on thin-film forms of hydrogenated silicon. Topics include: Staebler-Wronski and fundamental defect studies in amorphous silicon; the story of hydrogen in amorphous silicon; photoelectric properties of amorphous silicon; deposition and properties of microcrystalline silicon; deposition studies for amorphous silicon and related materials; solar cells; thin-film transistors and sensors and novel device concepts.
Download or read book Growth Mechanisms and Characterization of Hydrogenated Amorphous-silicon-alloy Films. Annual Subcontract Report, 14 February 1992--13 February 1993 written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work performed to better understand the atomic-scale structure of glow-discharge-produced a-Si:H, a Ge:H, and a-Si:Ge:H films; its effect on film quality; and its dependence on deposition discharge conditions. Hydrogenated a- Si films are deposited from a silane rf discharge onto atomically flat crystal Si and GaAs substrates. The substrates are then transferred in vacuum to a scanning tunneling microscope, where the atomic-scale surface morphology is measured. The films were deposited at T[sub s] = 30[degree]C and 250[degree]C from a silane rf glow discharge using device-quality deposition conditions of 2.66 Pa (0.5 Torr) silane pressure, 1.7 [Angstrom]/s deposition rate, and small power/flow; IR absorption, [sigma][sub L], and [sigma][sub D] indicate high-quality intrinsic films. From the thickness dependence of the surface morphology, we determined that the films initially conform smoothly to an atomically flat Si or GaAs substrate, but as the thickness increases the roughness steadily increases to approximately 10% of the length of the scanned region. The surface of 100-400-nm-thick films is highly inhomogeneous, with steep hills and canyons in some areas and large atomically smooth regions in others. These unexpectedly large surface irregularities indicate severe and often connected void structures in the growing film, as well as relatively limited-range surface diffusion of the incorporating SiH[sub 3] radicals. On the other hand, large areas of atomically flat surface were occasionally found, indicating the possibility of growing a homogeneous and compact amorphous film if appropriate growth conditions could be discovered.
Author : Deren Yang
Publisher : Springer
ISBN 13 : 9783662564714
Total Pages : 0 pages
Book Rating : 4.5/5 (647 download)
Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
Author : Werner Luft
Publisher : CRC Press
ISBN 13 : 9780824791469
Total Pages : 344 pages
Book Rating : 4.7/5 (914 download)
Download or read book Hydrogenated Amorphous Silicon Alloy Deposition Processes written by Werner Luft and published by CRC Press. This book was released on 1993-05-24 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference reviews common film and plasma diagnostic techniques and the deposition and film properties of various hydrogenated amorphous silicon alloys (a-Si:H).;Drawing heavily from studies on a-Si:H solar cells and offering valuable insights into other semiconductor applications of a-Si:H and related alloys, Hydrogenated Amorphous Silicon Alloy Deposition Processes: describes conventional as well as alternative, deposition processes and compares the resulting material properties; systematically categorizes various a-Si:H deposition techniques; details the characteristics of a-Si:H and related alloys with both high and low optical bandgap, including a-SiC:H, a-SiGe:H, and a-SiSn:H; discusses basic designs of glow discharge deposition reactors; evaluates the etching properties of amorphous silicon-based alloys; and examines microcrystalline silicon and silicon carbide.;Providing over 825 literature citations for further study, Hydrogenated Amorphous Silicon Alloy Deposition Processes is an incomparable resource for physicists; materials scientists; chemical, process and production engineers; electrical engineers and technicians in the semiconductor industry; and upper-level undergraduate and graduate students in these disciplines.
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques. Second Quarterly Progress Report, 1 April-30 June 1979 written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Using quartz substrates, hydrogenated a-Si thin films have now been produced both by glow discharge decomposition of silane and by the controlled ion plating of high purity through glow discharges composed of silane, hydrogen, and argon using a modified Takagi apparatus. Thus far, thin films produced by both glow discharge decomposition of silane with and without magnetic confinement and by ion plating have been characterized and compared using x-ray deffractometry, infrared spectroscopy, optical absorption spectroscopy and by their temperature dependence of resistivity. Based on these results, the ion plating technique of producing a-Si thin films looks extremely encouraging. Films have been produced at approximately ten times the deposition rate obtained using glow discharge decomposition of silane, even with magnetic field containment. In addition the resulting thin film properties measured to date compared favorably with those obtained from our glow discharge produced films and the properties of glow discharge produced films reported in the literature.
Author : Arno Hendrikus Marie Smets
Publisher :
ISBN 13 : 9789038619699
Total Pages : 175 pages
Book Rating : 4.6/5 (196 download)
Download or read book Growth Related Material Properties of Hydrogenated Amorphous Silicon written by Arno Hendrikus Marie Smets and published by . This book was released on 2002 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: The realization of ultra high hydrogenated amorphous silicon (a-Si:H) growth rates (>10 A/s) is one of the main issues affecting cost reduction in the production process of thin film a-Si:H solar cells. Until now, the expanding thermal plasma (ETP) deposition technique and the hot-wire chemical deposition (HWCVD) technique are the only two techniques which have obtained good materials properties at ultra high growth rates of 100 A/s. To optimize the a-Si:H growth rate and the material properties, more insight into the a-Si:H growth is required. In this thesis the a-Si:H film properties deposited by means of the ETP technique are studied. Furthermore, the relation of the material properties with a-Si:H growth from the remote ETP deposition is studied.
Author : Shixi Liu
Publisher :
ISBN 13 :
Total Pages : 442 pages
Book Rating : 4.:/5 (373 download)
Download or read book Deposition, Characterization, and Device Application of Amorphous Carbon and Amorphous Silicon Films written by Shixi Liu and published by . This book was released on 1996 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James Jackson Sluss
Publisher :
ISBN 13 :
Total Pages : 110 pages
Book Rating : 4.:/5 (166 download)
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon written by James Jackson Sluss and published by . This book was released on 1986 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hwa Chao
Publisher :
ISBN 13 :
Total Pages : 81 pages
Book Rating : 4.:/5 (187 download)
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Films written by Hwa Chao and published by . This book was released on 1987 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J.D. Joannopoulos
Publisher : Springer
ISBN 13 : 9783540128076
Total Pages : 312 pages
Book Rating : 4.1/5 (28 download)
Download or read book The Physics of Hydrogenated Amorphous Silicon I written by J.D. Joannopoulos and published by Springer. This book was released on 1984-06-01 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by numerous experts
