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Dependence Of Fracture Toughness On Crystallographic Orientation In Single Crystalline Cubic Beta Silicon Carbide
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Book Synopsis Dependence of Fracture Toughness on Crystallographic Orientation in Single-Crystalline Cubic ([beta] Silicon Carbide by :
Download or read book Dependence of Fracture Toughness on Crystallographic Orientation in Single-Crystalline Cubic ([beta] Silicon Carbide written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Along with other desirable properties, the ability of silicon carbide (SiC) to retain high strength after elevated temperature exposures to neutron irradiation renders it potentially applicable in fusion and advanced fission reactors. However, properties of the material such as room temperature fracture toughness must be thoroughly characterized prior to such practical applications. The objective of this work is to investigate the dependence of fracture toughness on crystallographic orientation for single-crystalline [beta]-SiC. X-ray diffraction was first performed on the samples to determine the orientation of the crystal. Nanoindentation was used to determine a hardness of 39.1 and 35.2 GPa and elastic modulus of 474 and 446 GPa for the single-crystalline and polycrystalline samples, respectively. Additionally, crack lengths and indentation diagonals were measured via a Vickers micro-hardness indenter under a load of 100 gf for different crystallographic orientations with indentation diagonals aligned along fundamental cleavage planes. Upon examination of propagation direction of cracks, the cracks usually did not initiate and propagate from the corners of the indentation where the stresses are concentrated but instead from the indentation sides. Such cracks clearly moved along the {1 1 0} family of planes (previously determined to be preferred cleavage plane), demonstrating that the fracture toughness of SiC is comparatively so much lower along this set of planes that the lower energy required to cleave along this plane overpowers the stress-concentration at indentation corners. Additionally, fracture toughness in the 1 1 0 direction was 1.84 MPa·m1/2, lower than the 3.46 MPa·m1/2 measured for polycrystalline SiC (which can serve as an average of a spectrum of orientations), further demonstrating that single-crystalline [beta]-SiC has a strong fracture toughness anisotropy.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1986 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth of Single Crystal Beta Silicon Carbide by :
Download or read book Growth of Single Crystal Beta Silicon Carbide written by and published by . This book was released on 1992 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta-SiC is a promising, wide bandgap material for high power electronic devices capable of operation at high temperatures. Its high saturation velocity, high breakdown electric field, and high thermal conductivity point to superior performance for high frequency applications. The successful fabrication of Beta-SiC devices requires high quality films to be epitaxially grown on lattice-matched substrate materials. Single crystals of Beta-SiC offer the optimum substrate material for lattice matching. The major problem to be overcome in the growth of large single crystals of Beta-SiC is polytype alpha-SiC formation. Cubic Beta-SiC crystallizes only below 2000 deg C. Above this temperature, SiC undergoes a phase transformation from the Beta-to the alpha-phase. In Phase I, we investigated two crystal growth techniques: sublimation and gas-vapor transport. We were able to grow small 3C-SiC crystals by both methods.
Book Synopsis Anisotropic Friction, Deformation, and Fracture of Single-crystal Silicon Carbide at Room Temperature by : Kazuhisa Miyoshi
Download or read book Anisotropic Friction, Deformation, and Fracture of Single-crystal Silicon Carbide at Room Temperature written by Kazuhisa Miyoshi and published by . This book was released on 1979 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Anisotropic Friction, Deformation, and Fracture of Single-crystal Silicon Carbide at Room Temperature by : Kazuhisa Miyoshi
Download or read book Anisotropic Friction, Deformation, and Fracture of Single-crystal Silicon Carbide at Room Temperature written by Kazuhisa Miyoshi and published by . This book was released on 1979 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fracture Toughness of (100) P-type Single-crystal Silicon by : James G. Tomei
Download or read book Fracture Toughness of (100) P-type Single-crystal Silicon written by James G. Tomei and published by . This book was released on 1993 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide--1973 by : Robert C. Marshall
Download or read book Silicon Carbide--1973 written by Robert C. Marshall and published by . This book was released on 1974 with total page 714 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterizing the Mechanical Behavior of Single and Polycrystalline Silicon Carbide Using Nanoindentation by : Amit Datye
Download or read book Characterizing the Mechanical Behavior of Single and Polycrystalline Silicon Carbide Using Nanoindentation written by Amit Datye and published by . This book was released on 2014 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research aims at enhancing the fundamental understanding of mechanisms controlling the deformation and fracture of silicon carbide based ceramics (single- and poly-crystal). The role of microstructure and material properties on the energy absorption capability of SiC is studied. This research helps to improve the ability to quantitatively predict the initiation and propagation of fracture and the interaction between fracture and plasticity, which provides a step towards a mechanistic understanding of deformation and failure properties of ceramic single crystals and polycrystals. The validity of the indentation-cracking method for toughness measurement is examined using nanoindentation tests with different indenters (spherical, pyramidal). Pyramidal indenters with various centerline to face angles are used to produce a wide range of effective strains in the single and polycrystalline SiC. Crystal plasticity constitutive laws can be calibrated using below threshold indentation loads. Above threshold loads are used to construct a parametric map that delineates the dependence of the ratio of crack size and contact radius on indenter geometry, applied load, toughness, and hardness, thus providing important guidelines for the toughness measurement method. By examining the behavior of several SiC materials during nanoindentation experiments using spherical and pyramidal indenters, it is possible to make predictions about methods to improve the ductility and fracture toughness of SiC to optimize its energy absorption. The applicability of the area under the irreversible part of the indentation load displacement curve (energy dissipated during loading) to predict the performance of SiC under contact loading is examined.
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Band-gap Photoconductivity of High-purity Single Crystals of Cubic (beta) Silicon Carbide by : John A. Detrio
Download or read book The Band-gap Photoconductivity of High-purity Single Crystals of Cubic (beta) Silicon Carbide written by John A. Detrio and published by . This book was released on 1968 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report presents band gap photoconductivity data on beta phase silicon carbide. The data was compared with first order optical theory and found to provide essential agreement. (Author).
Author :United States. National Aeronautics and Space Administration Scientific and Technical Information Division Publisher : ISBN 13 : Total Pages :966 pages Book Rating :4.F/5 ( download)
Book Synopsis NASA Scientific and Technical Reports by : United States. National Aeronautics and Space Administration Scientific and Technical Information Division
Download or read book NASA Scientific and Technical Reports written by United States. National Aeronautics and Space Administration Scientific and Technical Information Division and published by . This book was released on 1970 with total page 966 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :United States. National Aeronautics and Space Administration. Scientific and Technical Information Division Publisher : ISBN 13 : Total Pages :962 pages Book Rating :4.E/5 ( download)
Book Synopsis A Selected Listing of NASA Scientific and Technical Reports by : United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Download or read book A Selected Listing of NASA Scientific and Technical Reports written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Division and published by . This book was released on 1970 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Beta-silicon Carbide Single Crystals by : Frank A. Halden
Download or read book Growth and Characterization of Beta-silicon Carbide Single Crystals written by Frank A. Halden and published by . This book was released on 1965 with total page 25 pages. Available in PDF, EPUB and Kindle. Book excerpt: Changes in crystal size and morphology were obtained by modifying the process for growing crystals of betasilicon carbide from solution in carbon-saturated melts. Well developed laths and plates were grown under conditions favoring dendritic growth mechanisms (low thermal gradient with moderate stirring). Polyhedral crystals grew under high thermal gradient conditions when high velocity stirring was employed. Three-dimensionaltype growth was also produced from a 73 wt percent ironsilicon alloy under conditions that normally produce lath-type growth. Uncorrected electron mobilities of 700 to 1000 sq cm/v-sec were measured at room temperature, and a few preliminary Hall measurements were made over the temperature range from 77 to 300 K. (Author).
Author :United States. National Aeronautics and Space Administration. Scientific and Technical Information Division Publisher : ISBN 13 : Total Pages :956 pages Book Rating :4.:/5 (317 download)
Book Synopsis NASA Scientific and Technical Reports and Publications for 1969 - A Selected Listing by : United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Download or read book NASA Scientific and Technical Reports and Publications for 1969 - A Selected Listing written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Division and published by . This book was released on 1970 with total page 956 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1994 with total page 1584 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NASA SP. written by and published by . This book was released on 1970 with total page 966 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1985 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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