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Author : David Emory Bliss
Publisher :
ISBN 13 :
Total Pages : 406 pages
Book Rating : 4.:/5 (33 download)
Download or read book Defect Studies in Low-temperature-grown GaAs written by David Emory Bliss and published by . This book was released on 1992 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 201 pages
Book Rating : 4.:/5 (893 download)
Download or read book Defect Studies in Low-temperature-grown GaAs written by and published by . This book was released on 1992 with total page 201 pages. Available in PDF, EPUB and Kindle. Book excerpt: High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 1019 cm−3 Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 ± 0.3 eV and 1.5 ± 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 ± 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.
Author :
Publisher :
ISBN 13 :
Total Pages : 32 pages
Book Rating : 4.:/5 (946 download)
Download or read book Theoretical Investigation of Point Defects and Defect Complexes in Low-Temperature-Grown GaAs written by and published by . This book was released on 1999 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The major aim of our research has been a theoretical investigation of (1) important point defect complexes in low-temperature-grown (LT) GaAs and (2) the microscopic processes occurring at the surface during growth of GaAs films, which determine how much excess arsenic will be incorporated into the material.
Author : Valdemar Meisen
Publisher :
ISBN 13 :
Total Pages : 269 pages
Book Rating : 4.:/5 (539 download)
Download or read book Niels Steensen written by Valdemar Meisen and published by . This book was released on 1932 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Daniel M. Fleetwood
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author : Zul Azhar bin Zahid Jamal
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (599 download)
Download or read book Defect Studies of GaAs and Al GaAs Grown by Chemical Beam Epitaxy written by Zul Azhar bin Zahid Jamal and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J.P. Hirtz
Publisher : Elsevier
ISBN 13 : 1483290425
Total Pages : 365 pages
Book Rating : 4.4/5 (832 download)
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Download or read book Low Temperature Grown GaAs and Related Materials written by and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 440 pages
Book Rating : 4.:/5 (3 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerald L. Witt
Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (355 download)
Download or read book Special Issue on Low Temperature Grown GaAs and Related Materials written by Gerald L. Witt and published by . This book was released on 1993 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerald L. Witt
Publisher :
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.3/5 (91 download)
Download or read book Low Temperature (LT) GaAs and Related Materials: Volume 241 written by Gerald L. Witt and published by . This book was released on 1992-07-15 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : Ri-an Zhao
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.:/5 (34 download)
Download or read book Growth and Defect Characterization of Low Temperature Molecular Beam Epitaxy GaAs written by Ri-an Zhao and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Publisher : Academic Press
ISBN 13 : 008086449X
Total Pages : 449 pages
Book Rating : 4.0/5 (88 download)
Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-10-27 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
Author : S. J. Hartnett
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (61 download)
Download or read book Uniaxial Stress/DLTS Studies on Deep Level Defects in N-GaAs written by S. J. Hartnett and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 638 pages
Book Rating : 4.U/5 (183 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 638 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Reinhard Krause-Rehberg
Publisher : Springer Science & Business Media
ISBN 13 : 9783540643715
Total Pages : 408 pages
Book Rating : 4.6/5 (437 download)
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Author : Gordon Davies
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035705240
Total Pages : 1932 pages
Book Rating : 4.0/5 (357 download)
Download or read book Defects in Semiconductors 19 written by Gordon Davies and published by Trans Tech Publications Ltd. This book was released on 1997-12-11 with total page 1932 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Technology depends upon silicon chips, and life as we know it would hardly be possible without semiconductor devices. Control over a given semiconductor's electronic properties is achieved via defect engineering, and the scientific and technical challenges in this field are manifold. Volume is indexed by Thomson Reuters CPCI-S (WoS).
