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Defect Engineering In Semiconductor Growth Processing And Device Technology
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Book Synopsis Defect Engineering in Semiconductor Growth, Processing, and Device Technology by : S. Ashok
Download or read book Defect Engineering in Semiconductor Growth, Processing, and Device Technology written by S. Ashok and published by . This book was released on 1992 with total page 1180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
Book Synopsis Defect Engineering in Semiconductor Growth, Processing, and Device Technology by : S. Ashok
Download or read book Defect Engineering in Semiconductor Growth, Processing, and Device Technology written by S. Ashok and published by . This book was released on 1992 with total page 1176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
Book Synopsis Symposium Proceedings Defect and Impurity Engineered Semiconductors and Devices Held in San Francisco, California on 17-21 April 1995 by :
Download or read book Symposium Proceedings Defect and Impurity Engineered Semiconductors and Devices Held in San Francisco, California on 17-21 April 1995 written by and published by . This book was released on 1996 with total page 1052 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume results from a symposium held at the 1995 MRS Spring Meeting, April 17-21, in San Francisco. The symposium, bearing the title of this volume, followed upon a highly successful earlier symposium entitled 'Defect Engineering in Semiconductor Growth. Processing and Device Technology, ' held at the 1992 MRS Spring Meeting. The intent of the present symposium was to go beyond defect control and explore deliberate introduction and manipulation of defects and impurities in order to engineer some desired properties in semiconductor materials and devices. The response from the academic and industrial research communities was overwhelming, with over 280 abstracts submitted from around the world. The theme of defect engineering has clearly come of age. p2.
Book Synopsis Gettering Anf Defect Engineering in Semiconductor Technology IX by :
Download or read book Gettering Anf Defect Engineering in Semiconductor Technology IX written by and published by . This book was released on 2001 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials. Furthermore, the unceasing efforts in research on Si-based materials have been able to overcome some of the most stringent limitations on a Si-based technology. In fact, demonstrations of the feasibility of integrating IV-IV heterostructures and light-emitting devices into silicon technology, together with the promise of 450mm wafers combined with 70 nm technology, seem set to maintain the performance advantages that cause more than 95% of all manufactured semiconductor devices to be fabricated in silicon. However, the demands for wider applications of solid-state electronics are increasing demands to be made for devices having higher performances or very special properties. This makes research, on advanced materials and devices which are based upon other semiconductors, a highly relevant strand of semiconductor research for the near future. These proceedings span a wide variety of topics: going from silicon crystal growth and substrates, to technological processes and analytical techniques, to dopant-defect interactions, gettering, Si opto-electronics, radiation-hardness and nanoelectronics. A small section is also dedicated to compound semiconductors and materials other than silicon.
Book Synopsis Defects and Properties of Semiconductors by : J. Chikawa
Download or read book Defects and Properties of Semiconductors written by J. Chikawa and published by Springer. This book was released on 1987-03-31 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XV by : J.D. Murphy
Download or read book Gettering and Defect Engineering in Semiconductor Technology XV written by J.D. Murphy and published by Trans Tech Publications Ltd. This book was released on 2013-10-07 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XII by : Anna Cavallini
Download or read book Gettering and Defect Engineering in Semiconductor Technology XII written by Anna Cavallini and published by Trans Tech Publications Ltd. This book was released on 2007-10-25 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology X by : Hans Richter
Download or read book Gettering and Defect Engineering in Semiconductor Technology X written by Hans Richter and published by Trans Tech Publications Ltd. This book was released on 2003-09-30 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XI by : Bernard Pichaud
Download or read book Gettering and Defect Engineering in Semiconductor Technology XI written by Bernard Pichaud and published by Trans Tech Publications Ltd. This book was released on 2005-12-15 with total page 830 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at La Badine at the Giens peninsula south of France.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XIII by : Martin Kittler
Download or read book Gettering and Defect Engineering in Semiconductor Technology XIII written by Martin Kittler and published by Trans Tech Publications Ltd. This book was released on 2009-10-28 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology by : H. Richter
Download or read book Gettering and Defect Engineering in Semiconductor Technology written by H. Richter and published by . This book was released on 2004 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Third International Symposium on Defects in Silicon by : Takao Abe
Download or read book Proceedings of the Third International Symposium on Defects in Silicon written by Takao Abe and published by The Electrochemical Society. This book was released on 1999 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XV by : J. D. Murphy
Download or read book Gettering and Defect Engineering in Semiconductor Technology XV written by J. D. Murphy and published by . This book was released on 2013 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems. Review from Book News Inc.: The proceedings for GADEST 2013 contains 84 papers on such matters as defect engineering in silicon solar cells, structural and production issues in cast silicon materials for solar cells, characterizing silicon for solar cells, intrinsic point defects in silicon, light impurities in silicon-based materials, fundamental properties and gettering of metals in silicon, extended and implantation-related defects in silicon, germanium-based devices and materials, semiconductors other than silicon and germanium, and nanostructures and new materials systems.
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by : S. Ashok
Download or read book Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Book Synopsis Proceedings of the Fourth International Symposium on High Purity Silicon by : Cor L. Claeys
Download or read book Proceedings of the Fourth International Symposium on High Purity Silicon written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1996 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices by : Dieter K. Schroder
Download or read book Proceedings of the Symposium on Diagnostic Techniques for Semiconductor Materials and Devices written by Dieter K. Schroder and published by The Electrochemical Society. This book was released on 1994 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
