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Deep Level Transient Spectroscopic Study Of Intrinsic Defects In Particle Irradiated Zno Single Crystal Materials
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Book Synopsis Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials by : 吕小红
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials written by 吕小红 and published by . This book was released on 2012 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-Irradiated Zno Single Crystal Materials by : Xiaohong Lu
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-Irradiated Zno Single Crystal Materials written by Xiaohong Lu and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials" by Xiaohong, Lu, 吕小红, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Zinc oxide (ZnO), as a Ⅱ-Ⅵ compound semiconductor with a wide direct band gap, has attracted great attention from the worldwide researchers for its potential application in the fields of spintronics and optoelectronics. At present research about the defects in ZnO and ZnO-based materials is still far from complete. The deep level defects in melted grown ZnO single crystal induced by helium ions implantation and electron irradiation, as well as their thermal evolution, were studied in this research using the technique of deep level transient spectroscopy (DLTS) and photoluminescence (PL). DLTS results indicated that, besides E3 ( 0.28 ) trap which was widely observed in the as-grown ZnO samples, the deep level with 0.92 was also indentified in the helium-implanted ZnO samples, which was introduced by the ion implantation and tentatively assigned to be the oxygen vacancy (VO). This deep level was removed after 350 oC annealing in argon gas. Annealing at 350 oC also brought along a new deep level with 0.66 into helium-implanted samples which could be annealed out by 650 oC annealing in argon gas. The electron irradiation induced a deep level with 0.59 into ZnO, which was probably associated with the singly charged state of VO. This deep level also tended to be removed at 350 oC annealing in argon gas. The PL spectra revealed that both helium implantation and electron irradiation could improve the bound-exciton peak. Helium implantation also introduced defects emission at 1.90 eV, which was the red luminescence band, into the ZnO single crystal materials. This red luminescence band peak might be associated with DAP recombination. Electron irradiation might restrain the green luminescence in ZnO single crystal. The fine structures could disappear as the measurement temperature increased, leaving the green luminescence band only. DOI: 10.5353/th_b4786991 Subjects: Zinc oxide - Defects Deep level transient spectroscopy
Book Synopsis Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials by : Xiaohong Lu (Ph. D.)
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials written by Xiaohong Lu (Ph. D.) and published by . This book was released on 2012 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Deep Level Transient Spectroscopic Study of Nitrogen-Implanted Zno Single Crystal by : Guangwei Ding
Download or read book Deep Level Transient Spectroscopic Study of Nitrogen-Implanted Zno Single Crystal written by Guangwei Ding and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal" by Guangwei, Ding, 丁光炜, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4554159 Subjects: Zinc oxide - Defects Deep level transient spectroscopy
Book Synopsis Deep Level Defects Study of Arsenic Implanted Zno Single Crystal by : Congyong Zhu
Download or read book Deep Level Defects Study of Arsenic Implanted Zno Single Crystal written by Congyong Zhu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal" by Congyong, Zhu, 朱從佣, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4098775 Subjects: Zinc oxide Arsenic Doped semiconductors Semiconductors - Defects Deep level transient spectroscopy
Book Synopsis Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal by : Guangwei Ding (M. Phil.)
Download or read book Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal written by Guangwei Ding (M. Phil.) and published by . This book was released on 2010 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal by : Ziran Ye
Download or read book Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal written by Ziran Ye and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal" by Ziran, Ye, 叶自然, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its wide applicability. In order to obtain semiconductor devices with stable and reproducible properties further study of deep level defects is essential. DLTS (Deep level Transient Spectroscopy) is a direct and straightforward techniqueto determine the energy level of the deep level defects. Other information such as activation energy and capture cross section of the defect can also be obtained through this method. In our study ZnO single crystal samples were implanted by oxygen with the energy of 150keV. After the pretreatment of hydrogen peroxide, Schottky contacts were fabricated with Au film deposited by thermal evaporation. Deep level defects were studied by deep level transient spectroscopy (DLTS). Single peak spectra were observed in the as-implanted sample and samples anneal at 350oC, 650oC and 750oC with the corresponding activation energy decreasing with the annealing temperature from 0.29eV as found in theas-implanted sample. Three peaks were identified in the DLTS spectra of the 900oC sample, with the activation energies of 0.11eV, 0.16eV and 0.37eV respectively.After analysis in detail we found some peaks in the DLTS spectra were the combination of two other peaks, dominated in different temperature range. The thermal evolutions of the deep levels up to the temperature of 1200oC were also investigated. DOI: 10.5353/th_b4715385 Subjects: Zinc oxide - Defects Deep level transient spectroscopy Ion implantation
Book Synopsis Defect Studies in as Grown and Irradiated Zno for Optoelectronic Applications by : Keng Siew Chan
Download or read book Defect Studies in as Grown and Irradiated Zno for Optoelectronic Applications written by Keng Siew Chan and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO is a direct wide bandgap (3.37 eV) semiconductor that is promising for the fabrication of optoelectronic devices operating in the UV region. However, it is still difficult to reliably dope ZnO into p-type. As grown ZnO always shows a persistent n-type conductivity, which is attributed to native defects particularly O vacancies (Vo) and Zn interstitials (ZnI), and impurities such as H, Al, In and Ga. To improve the control over the conductivity in ZnO, a good understanding of the formation of defects and their interaction with impurities is required. This thesis aims to study this interaction by exploiting the large amount of defects generated from ion implantation damage. Additionally, implantation-induced voids are also well known to be used for ion cutting and impurities gettering in semiconductors. The first part of this thesis studies the formation of voids in single crystal ZnO substrates from high dose H implantation. After H implantation, a deformed layer with a uniaxial strain along the c-axis is produced. 0.12% of the implanted H remains after annealing at 950C. The implanted H also passivate the emission at 2.4 eV particularly after 600C annealing. Transmission electron microscopy (TEM) studies reveal that the H implanted region is decorated by nano-voids of diameter 2 - 40 nm. Annealing at different temperature induces noticeable changes to the shape, size and empty volume density of the nano-voids. At 800C, these nano-voids achieve thermal equilibrium shape. This allows the implementation of a reverse-Wulff construction to determine the formation energy and step energy of ZnO surfaces. In the presence of H, the O-terminated surface is found to be the more preferred surface polarity. This thesis also studies the interstitial mediated transient enhanced diffusion (TED) process in Li - containing ZnO samples after Zn implantation. During annealing at 700 - 800C, highly mobile ZnI is released as a burst from the implanted layer to displace substitutional Li in Zn site (LiZn) via a "kick-out" mechanism. This produces a significant Li depleted region in the samples. At 750C, the density of the injected ZnI is so substantial that Zn precipitates start to form. Secondary ion-mass spectrometry (SIMS) shows that the maximum concentration of LiZn getting displaced is significantly less than the implanted Zn. The Zn precipitates can therefore be accounted for a large fraction of the presumably mobile "missing" implanted ZnI that are not involved in the LiZn "kick-out" process. The later part of this thesis studies the fabrication of high quality Pd Schottky contacts to ZnO substrates. Deep level transient spectroscopy (DLTS) is subsequently implemented to investigate electrically active traps attributed to surface/subsurface defects, bulk defects, Li-related defect complexes and irradiation-induced defects. DLTS reveals surface/subsurface defects with an energy level 1.07 eV below the conduction band, which is tentatively related to Zn vacancy clusters produced by hydrogen peroxide treatment. Li implantation produces two levels at 0.55 eV and 1.25 eV below the conduction band. The 0.55 eV level is tentatively attributed to defect clusters that involved the mobile ZnI.
Book Synopsis Semiconducting and Insulating Materials ... by :
Download or read book Semiconducting and Insulating Materials ... written by and published by . This book was released on 2002 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by and published by . This book was released on 1994 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Lithium Niobate written by Tatyana Volk and published by Springer Science & Business Media. This book was released on 2008-09-13 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers new research on LiNbO3 including current studies on intrinsic and extrinsic point defects and the contribution of intrinsic defects to photoinduced charge transport. Applications of this material are also discussed.
Book Synopsis Defects In Functional Materials by : Chi-chung Francis Ling
Download or read book Defects In Functional Materials written by Chi-chung Francis Ling and published by World Scientific. This book was released on 2020-08-21 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research of functional materials has attracted extensive attention in recent years, and its advancement nitrifies the developments of modern sciences and technologies like green sciences and energy, aerospace, medical and health, telecommunications, and information technology. The present book aims to summarize the research activities carried out in recent years devoting to the understanding of the physics and chemistry of how the defects play a role in the electrical, optical and magnetic properties and the applications of the different functional materials in the fields of magnetism, optoelectronic, and photovoltaic etc.
Book Synopsis Semiconductor Radiation Detectors by : Gerhard Lutz
Download or read book Semiconductor Radiation Detectors written by Gerhard Lutz and published by Springer. This book was released on 2007-06-15 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.
Book Synopsis Crystal Growth and Evaluation of Silicon for VLSI and ULSI by : Golla Eranna
Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Book Synopsis Applied Science & Technology Index by :
Download or read book Applied Science & Technology Index written by and published by . This book was released on 1995 with total page 1804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
