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Deep Level Defects Study Of Arsenic Implanted Zno Single Crystal
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Book Synopsis Deep Level Defects Study of Arsenic Implanted Zno Single Crystal by : Congyong Zhu
Download or read book Deep Level Defects Study of Arsenic Implanted Zno Single Crystal written by Congyong Zhu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal" by Congyong, Zhu, 朱從佣, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4098775 Subjects: Zinc oxide Arsenic Doped semiconductors Semiconductors - Defects Deep level transient spectroscopy
Book Synopsis Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal by : Congyong Zhu
Download or read book Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal written by Congyong Zhu and published by . This book was released on 2008 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal by : Ziran Ye
Download or read book Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal written by Ziran Ye and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal" by Ziran, Ye, 叶自然, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its wide applicability. In order to obtain semiconductor devices with stable and reproducible properties further study of deep level defects is essential. DLTS (Deep level Transient Spectroscopy) is a direct and straightforward techniqueto determine the energy level of the deep level defects. Other information such as activation energy and capture cross section of the defect can also be obtained through this method. In our study ZnO single crystal samples were implanted by oxygen with the energy of 150keV. After the pretreatment of hydrogen peroxide, Schottky contacts were fabricated with Au film deposited by thermal evaporation. Deep level defects were studied by deep level transient spectroscopy (DLTS). Single peak spectra were observed in the as-implanted sample and samples anneal at 350oC, 650oC and 750oC with the corresponding activation energy decreasing with the annealing temperature from 0.29eV as found in theas-implanted sample. Three peaks were identified in the DLTS spectra of the 900oC sample, with the activation energies of 0.11eV, 0.16eV and 0.37eV respectively.After analysis in detail we found some peaks in the DLTS spectra were the combination of two other peaks, dominated in different temperature range. The thermal evolutions of the deep levels up to the temperature of 1200oC were also investigated. DOI: 10.5353/th_b4715385 Subjects: Zinc oxide - Defects Deep level transient spectroscopy Ion implantation
Book Synopsis Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-Irradiated Zno Single Crystal Materials by : Xiaohong Lu
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-Irradiated Zno Single Crystal Materials written by Xiaohong Lu and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials" by Xiaohong, Lu, 吕小红, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Zinc oxide (ZnO), as a Ⅱ-Ⅵ compound semiconductor with a wide direct band gap, has attracted great attention from the worldwide researchers for its potential application in the fields of spintronics and optoelectronics. At present research about the defects in ZnO and ZnO-based materials is still far from complete. The deep level defects in melted grown ZnO single crystal induced by helium ions implantation and electron irradiation, as well as their thermal evolution, were studied in this research using the technique of deep level transient spectroscopy (DLTS) and photoluminescence (PL). DLTS results indicated that, besides E3 ( 0.28 ) trap which was widely observed in the as-grown ZnO samples, the deep level with 0.92 was also indentified in the helium-implanted ZnO samples, which was introduced by the ion implantation and tentatively assigned to be the oxygen vacancy (VO). This deep level was removed after 350 oC annealing in argon gas. Annealing at 350 oC also brought along a new deep level with 0.66 into helium-implanted samples which could be annealed out by 650 oC annealing in argon gas. The electron irradiation induced a deep level with 0.59 into ZnO, which was probably associated with the singly charged state of VO. This deep level also tended to be removed at 350 oC annealing in argon gas. The PL spectra revealed that both helium implantation and electron irradiation could improve the bound-exciton peak. Helium implantation also introduced defects emission at 1.90 eV, which was the red luminescence band, into the ZnO single crystal materials. This red luminescence band peak might be associated with DAP recombination. Electron irradiation might restrain the green luminescence in ZnO single crystal. The fine structures could disappear as the measurement temperature increased, leaving the green luminescence band only. DOI: 10.5353/th_b4786991 Subjects: Zinc oxide - Defects Deep level transient spectroscopy
Book Synopsis Deep Level Transient Spectroscopic Study of Nitrogen-Implanted Zno Single Crystal by : Guangwei Ding
Download or read book Deep Level Transient Spectroscopic Study of Nitrogen-Implanted Zno Single Crystal written by Guangwei Ding and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal" by Guangwei, Ding, 丁光炜, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4554159 Subjects: Zinc oxide - Defects Deep level transient spectroscopy
Book Synopsis Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal by : Ziran Ye
Download or read book Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal written by Ziran Ye and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal by : Guangwei Ding (M. Phil.)
Download or read book Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal written by Guangwei Ding (M. Phil.) and published by . This book was released on 2010 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect Studies in as Grown and Irradiated Zno for Optoelectronic Applications by : Keng Siew Chan
Download or read book Defect Studies in as Grown and Irradiated Zno for Optoelectronic Applications written by Keng Siew Chan and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO is a direct wide bandgap (3.37 eV) semiconductor that is promising for the fabrication of optoelectronic devices operating in the UV region. However, it is still difficult to reliably dope ZnO into p-type. As grown ZnO always shows a persistent n-type conductivity, which is attributed to native defects particularly O vacancies (Vo) and Zn interstitials (ZnI), and impurities such as H, Al, In and Ga. To improve the control over the conductivity in ZnO, a good understanding of the formation of defects and their interaction with impurities is required. This thesis aims to study this interaction by exploiting the large amount of defects generated from ion implantation damage. Additionally, implantation-induced voids are also well known to be used for ion cutting and impurities gettering in semiconductors. The first part of this thesis studies the formation of voids in single crystal ZnO substrates from high dose H implantation. After H implantation, a deformed layer with a uniaxial strain along the c-axis is produced. 0.12% of the implanted H remains after annealing at 950C. The implanted H also passivate the emission at 2.4 eV particularly after 600C annealing. Transmission electron microscopy (TEM) studies reveal that the H implanted region is decorated by nano-voids of diameter 2 - 40 nm. Annealing at different temperature induces noticeable changes to the shape, size and empty volume density of the nano-voids. At 800C, these nano-voids achieve thermal equilibrium shape. This allows the implementation of a reverse-Wulff construction to determine the formation energy and step energy of ZnO surfaces. In the presence of H, the O-terminated surface is found to be the more preferred surface polarity. This thesis also studies the interstitial mediated transient enhanced diffusion (TED) process in Li - containing ZnO samples after Zn implantation. During annealing at 700 - 800C, highly mobile ZnI is released as a burst from the implanted layer to displace substitutional Li in Zn site (LiZn) via a "kick-out" mechanism. This produces a significant Li depleted region in the samples. At 750C, the density of the injected ZnI is so substantial that Zn precipitates start to form. Secondary ion-mass spectrometry (SIMS) shows that the maximum concentration of LiZn getting displaced is significantly less than the implanted Zn. The Zn precipitates can therefore be accounted for a large fraction of the presumably mobile "missing" implanted ZnI that are not involved in the LiZn "kick-out" process. The later part of this thesis studies the fabrication of high quality Pd Schottky contacts to ZnO substrates. Deep level transient spectroscopy (DLTS) is subsequently implemented to investigate electrically active traps attributed to surface/subsurface defects, bulk defects, Li-related defect complexes and irradiation-induced defects. DLTS reveals surface/subsurface defects with an energy level 1.07 eV below the conduction band, which is tentatively related to Zn vacancy clusters produced by hydrogen peroxide treatment. Li implantation produces two levels at 0.55 eV and 1.25 eV below the conduction band. The 0.55 eV level is tentatively attributed to defect clusters that involved the mobile ZnI.
Book Synopsis Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials by : 吕小红
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials written by 吕小红 and published by . This book was released on 2012 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Diffusion and Defects in ZnO by : David J. Fisher
Download or read book Diffusion and Defects in ZnO written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2013-09-04 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lanthanum hexaboride is useful because it possesses a high melting point (2210C), a low work function, one of the highest known electron emissivities, and is stable in vacuum. This volume summarises the extant data on the properties of this material, including the: bulk modulus, conductivity, crystal structure, Debye temperature, defect structure, elastic constants, electronic structure, emissivity, Fermi surface, hardness, heat capacity, magnetoresistance, reflectivity, resistivity, specific heat, surface structure, thermal conductivity, thermoelectric power, toughness and work function. The issue also includes original research papers on: the Pitting Resistance of 316 Stainless Steel in Ringers Solution, the Effect of Different Modifiers on the Microstructure and Strength of Locally Developed A356 Al-Si Alloy, the Site Preference of Zr in NiAl Dislocation Cores and its Effects on Bond Character, the Effect of Different Combinations of Salt Modifier on the Mechanical Properties and Microstructure of A356 Al-Si Alloy, Quasicrystalline Phase Formation in High Frequency Induction Melted Al80Cu14Fe6 Alloy, Numerical Investigation of the Effect of Sprue Base Design on the Flow Pattern of Aluminum Gravity Castings, the Evaluation of Surface Preparation Techniques for Steel Substrates Prior to Coating, Thermal Desorption of Hydrogen from AISI 316L Stainless Steel and Pure Nickel, Structural and Concentration Heterogeneities during the Formation of Silicide Phases in the Ti(5nm)/Ni(24nm)/Si(001)Thin-Film System, Studies of the g-Factor and Hyperfine Structure Constant for Ir4+ in CdO, Theoretical Studies of the Local Structures and Spin Hamiltonian Parameters for the Cu2+ Centers in Alkali Barium Borate Glasses, Study of the Properties of CR-39 Polymer Irradiated with Alpha Particles, Review of Diffusion and Interfacial Reactions in Sandwich Thin-Film Couples and the Correlation Coefficient between Vickers Hardness and Nuclear Techniques.
Book Synopsis Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials by : Xiaohong Lu (Ph. D.)
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials written by Xiaohong Lu (Ph. D.) and published by . This book was released on 2012 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Implantation of Acceptor Ions Into ZnO Crystals by : John Vedamuthu Kennedy
Download or read book Implantation of Acceptor Ions Into ZnO Crystals written by John Vedamuthu Kennedy and published by . This book was released on 2006 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electroreflectance Study of Ion-implanted ZnO Single Crystals by : Louis Hari (CAPT, USAF.)
Download or read book Electroreflectance Study of Ion-implanted ZnO Single Crystals written by Louis Hari (CAPT, USAF.) and published by . This book was released on 1975 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Annealing Studies on the Structural and Magnetical Properties of Co Implanted Zno Single Crystal by : Lanlan Zou
Download or read book Annealing Studies on the Structural and Magnetical Properties of Co Implanted Zno Single Crystal written by Lanlan Zou and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal" by Lanlan, Zou, 邹兰兰, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: As a wide band gap semiconductor, Zinc Oxide (ZnO) has recently attracted considerable attention due to its wide applicability. Transition metal (TM) doped ZnO is one of the most intensive research field in the last decade because of its possible application in spintronics devices. The Co-implanted ZnO has been considered as one of the most promising candidate in the field of diluted magnetic semiconductor (DMS). In this study, the magnetic and structural properties of Co-implanted ZnO single crystal were investigated. ZnO single crystals were implanted with 100 keV-Co ions at 300K with a fluence of 1014cm-2and subsequently annealed at 750oC and 900oC respectively. The samples were studied by secondary ion mass spectrometry, X-ray diffraction, photoluminescence, X-ray photoemission spectroscopy and vibrating sample magnetometer. The as-implanted sample seemed to be phase pure while the spinel secondary phase ZnCo2O4 was present in 750oC and 900oC samples showed trace ofCo3O4, Zn0.52Co2.48O4 and metallic Co cluster. All the samples exhibited ferromagnetism at room temperature in low field region, and the magnetic moment was found to decrease and increase after the heat treatment. In high field region, typical paramagnetism was the dominating magnetic property. More than one ferromagnetic mechanism is involved to explain the experimental results. DOI: 10.5353/th_b4979969 Subjects: Zinc oxide Annealing of crystals
Book Synopsis Electroreflectance Study of Ion-Implanted ZnO Single Crystals by : Louis Hari
Download or read book Electroreflectance Study of Ion-Implanted ZnO Single Crystals written by Louis Hari and published by . This book was released on 1975 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamental edge electroreflectance spectra of ion-implanted zinc oxide (ZnO) single crystals were measured at room temperature using the electrolyte technique. Measurements were made with the electric vector of the incident light both parallel and perpendicular to the hexagonal axis of the crystals. Quantitive results were obtained for the fundamental edge transition. The effects on the electroreflectance spectra due to electrochemical reactions and different band bending conditions were examined. Since the ion-implantation process produced deep-centered impurities, the electroreflectance spectra did not exhibit impurity associated transitions. (Author).
Book Synopsis Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal by : Lanlan Zou
Download or read book Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal written by Lanlan Zou and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal by : Lanlan Zou
Download or read book Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal written by Lanlan Zou and published by . This book was released on 2012 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
