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Crystal Phase Engineering In Iii V Semiconductor Films
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Book Synopsis Crystal Phase Engineering in III-V Semiconductor Films by : Philipp Staudinger
Download or read book Crystal Phase Engineering in III-V Semiconductor Films written by Philipp Staudinger and published by . This book was released on 2020 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mots-clés de l'auteur: crystal structure ; III-V semiconductors ; indium phosphide (InP) ; wurtzite ; polytypism ; metal-organic vapor phase epitaxy (MOVPE) ; metastable film ; photoluminescence ; transmission electron microscopy (TEM) ; room-temperature lasing.
Book Synopsis Handbook of Crystal Growth by : Tom Kuech
Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Book Synopsis III–V Compound Semiconductors by : Tingkai Li
Download or read book III–V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2010-12-02 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors. III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues. Explores silicon-based CMOS applications developed within the cutting-edge DARPA program Providing an overview of systems, devices, and their component materials, this book: Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes Introduces novel technologies for the measurement and evaluation of material quality and device properties Investigates state-of-the-art optical devices, LEDs, Si photonics, high-speed, high-power III-V materials and devices, III-V solar cell devices, and more Assembling the work of renowned experts, this is a reference for scientists and engineers working at the intersection of Si and compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.
Download or read book III-nitride written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2006 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.
Book Synopsis Advances in III-V Semiconductor Nanowires and Nanodevices by : Jianye Li
Download or read book Advances in III-V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Book Synopsis Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, by : M. G. Astles
Download or read book Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and Their Device Applications, written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Book Synopsis Growth Kinetics of III-V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources by : Bingwen Liang
Download or read book Growth Kinetics of III-V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources written by Bingwen Liang and published by . This book was released on 1993 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 4th International Conference on Nanotechnologies and Biomedical Engineering by : Ion Tiginyanu
Download or read book 4th International Conference on Nanotechnologies and Biomedical Engineering written by Ion Tiginyanu and published by Springer Nature. This book was released on 2019-09-17 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gathers the proceedings of the 4th International Conference on Nanotechnologies and Biomedical Engineering, held on September 18-21, 2019, in Chisinau, Republic of Moldova. It continues the tradition of the previous conference proceedings, thus reporting on both fundamental and applied research at the interface between nanotechnologies and biomedical engineering. Topics include: developments in bio-micro/nanotechnologies and devices; biomedical signal processing; biomedical imaging; biomaterials for biomedical applications; biomimetics; bioinformatics and e-health, and advances in a number of related areas. The book offers a timely snapshot of cutting-edge, multidisciplinary research and developments in the field of biomedical and nano-engineering.
Book Synopsis Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors by : Mengqi Fu
Download or read book Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors written by Mengqi Fu and published by Springer. This book was released on 2018-11-29 with total page 113 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Book Synopsis Chemistry for Electronic Materials by : K.F. Jensen
Download or read book Chemistry for Electronic Materials written by K.F. Jensen and published by Elsevier. This book was released on 1993-03-09 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: The chemical aspects of materials processing used for electronic applications, e.g. Si, III-V compounds, superconductors, metallization materials, are covered in this volume. Significant recent advances have occurred in the development of new volatile precursors for the fabrication of III-V semiconductor and metal [Cu, W] films by OMCVD. Some fundamentally new and wide-ranging applications have been introduced in recent times. Experimental and modeling studies regarding deposition kinetics, operating conditions and transport as well as properties of films produced by PVD, CVD and PECVD are discussed. The thirty papers in this volume report on many other significant topics also. Research workers involved in these aspects of materials technology may find here some new perspectives with which to augment their projects.
Book Synopsis Modern Ferrites, Volume 1 by : Vincent G. Harris
Download or read book Modern Ferrites, Volume 1 written by Vincent G. Harris and published by John Wiley & Sons. This book was released on 2023-01-04 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: MODERN FERRITES, Volume 1 A robust exploration of the basic principles of ferrimagnetics and their applications In Modern Ferrites Volume 1: Basic Principles, Processing and Properties, renowned researcher and educator Vincent G. Harris delivers a comprehensive overview of the basic principles and ferrimagnetic phenomena of modern ferrite materials. Volume 1 explores the fundamental properties of ferrite systems, including their structure, chemistry, and magnetism; the latest in processing methodologies; and the unique properties that result. The authors explore the processing, structure, and property relationships in ferrites as nanoparticles, thin and thick films, compacts, and crystals and how these relationships are key to realizing practical device applications laying the foundation for next generation technologies. This volume also includes: Comprehensive investigation of the historical and scientific significance of ferrites upon ancient and modern societies; Neel’s expanded theory of molecular field magnetism applied to ferrimagnetic oxides together with theoretic advances in density functional theory; Nonlinear excitations in ferrite systems and their potential for device technologies; Practical discussions of nanoparticle, thin, and thick film growth techniques; Ferrite-based electronic band-gap heterostructures and metamaterials. Perfect for RF engineers and magnetitians working in the field of RF electronics, radar, communications, and spintronics as well as other emerging technologies. Modern Ferrites will earn a place on the bookshelves of engineers and scientists interested in the ever-expanding technologies reliant upon ferrite materials and new processing methodologies. Modern Ferrites Volume 2: Emerging Technologies and Applications is also available (ISBN: 9781394156139).
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Solid State Engineering by : Manijeh Razeghi
Download or read book Fundamentals of Solid State Engineering written by Manijeh Razeghi and published by Springer Science & Business Media. This book was released on 2006-06-12 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication Covers wide range of topics in the same style and in the same notation Most up to date developments in semiconductor physics and nano-engineering Mathematical derivations are carried through in detail with emphasis on clarity Timely application areas such as biophotonics , bioelectronics
Book Synopsis Concise Encyclopedia of Semiconducting Materials & Related Technologies by : S. Mahajan
Download or read book Concise Encyclopedia of Semiconducting Materials & Related Technologies written by S. Mahajan and published by Elsevier. This book was released on 2013-10-22 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
