Cryogenic Operation Of Silicon Germanium Heterojunction Bipolar Transistors And Its Relation To Scaling And Optimization

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Cryogenic Operation of Silicon-germanium Heterojunction Bipolar Transistors and Its Relation to Scaling and Optimization

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Author : Jiahui Yuan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (668 download)

Book Synopsis Cryogenic Operation of Silicon-germanium Heterojunction Bipolar Transistors and Its Relation to Scaling and Optimization by : Jiahui Yuan

Download or read book Cryogenic Operation of Silicon-germanium Heterojunction Bipolar Transistors and Its Relation to Scaling and Optimization written by Jiahui Yuan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the proposed work is to study the behavior of SiGe HBTs at cryogenic temperatures and its relation to device scaling and optimization. Not only is cryogenic operation of these devices required by space missions, but characterizing their cryogenic behavior also helps to investigate the performance limits of SiGe HBTs and provides essential information for further device scaling. Technology computer aided design (TCAD) and sophisticated on-wafer DC and RF measurements are essential in this research. Drift-diffusion (DD) theory is used to investigate a novel negative differential resistance (NDR) effect and a collector current kink effect in first-generation SiGe HBTs at deep cryogenic temperatures. A theory of positive feedback due to the enhanced heterojunction barrier effect at deep cryogenic temperatures is proposed to explain such effects. Intricate design of the germanium and base doping profiles can greatly suppress both carrier freezeout and the heterojunction barrier effect, leading to a significant improvement in the DC and RF performance for NASA lunar missions. Furthermore, cooling is used as a tuning knob to better understand the performance limits of SiGe HBTs. The consequences of cooling SiGe HBTs are in many ways similar to those of combined vertical and lateral device scaling. A case study of low-temperature DC and RF performance of prototype fourth-generation SiGe HBTs is presented. This study summarizes the performance of all three prototypes of these fourth-generation SiGe HBTs within the temperature range of 4.5 to 300 K. Temperature dependence of a fourth-generation SiGe CML gate delay is also examined, leading to record performance of Si-based IC. This work helps to analyze the key optimization issues associated with device scaling to terahertz speeds at room temperature. As an alternative method, an fT -doubler technique is presented as an attempt to reach half-terahertz speeds. In addition, a roadmap for terahertz device scaling is given, and the potential relevant physics associated with future device scaling are examined. Subsequently, a novel superjunction collector design is proposed for higher breakdown voltages. Hydrodynamic models are used for the TCAD studies that complete this part of the work. Finally, Monte Carlo simulations are explored in the analysis of aggressively-scaled SiGe HBTs.

The Physics, Optimization, and Modeling of Cryogenically Operated Silicon-germanium Heterojunction Bipolar Transistors

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Author : Alvin Jose Joseph
Publisher :
ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.:/5 (367 download)

Book Synopsis The Physics, Optimization, and Modeling of Cryogenically Operated Silicon-germanium Heterojunction Bipolar Transistors by : Alvin Jose Joseph

Download or read book The Physics, Optimization, and Modeling of Cryogenically Operated Silicon-germanium Heterojunction Bipolar Transistors written by Alvin Jose Joseph and published by . This book was released on 1996 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications

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Author : Niccolò Rinaldi
Publisher : River Publishers
ISBN 13 : 8793519613
Total Pages : 378 pages
Book Rating : 4.7/5 (935 download)

Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications by : Niccolò Rinaldi

Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

Design and Optimization of Nano-scaled Silicon-germanium Heterojunction Bipolar Transistors

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Author : Yun Shi
Publisher :
ISBN 13 :
Total Pages : 236 pages
Book Rating : 4.:/5 (623 download)

Book Synopsis Design and Optimization of Nano-scaled Silicon-germanium Heterojunction Bipolar Transistors by : Yun Shi

Download or read book Design and Optimization of Nano-scaled Silicon-germanium Heterojunction Bipolar Transistors written by Yun Shi and published by . This book was released on 2005 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-germanium Heterojunction Bipolar Transistors

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Author : John D. Cressler
Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)

Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Cryogenic Operation of Silicon Power Devices

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Author : Ranbir Singh
Publisher : Springer Science & Business Media
ISBN 13 : 1461557518
Total Pages : 158 pages
Book Rating : 4.4/5 (615 download)

Book Synopsis Cryogenic Operation of Silicon Power Devices by : Ranbir Singh

Download or read book Cryogenic Operation of Silicon Power Devices written by Ranbir Singh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac tical means of fabricating electrical components and devices with lossless con ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of electric engineering.

Profile Design Issues and Optimization of Silicon-Germanium Heterojunction Bipolar Transistors

Author : Gang Zhang
Publisher :
ISBN 13 :
Total Pages : 158 pages
Book Rating : 4.:/5 (518 download)

Book Synopsis Profile Design Issues and Optimization of Silicon-Germanium Heterojunction Bipolar Transistors by : Gang Zhang

Download or read book Profile Design Issues and Optimization of Silicon-Germanium Heterojunction Bipolar Transistors written by Gang Zhang and published by . This book was released on 2002 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Geometrical Scaling and Radiation Effects in Silicon-germanium Heterojunction Bipolar Transistors

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Author : Shiming Zhang
Publisher :
ISBN 13 :
Total Pages : 324 pages
Book Rating : 4.:/5 (58 download)

Book Synopsis Geometrical Scaling and Radiation Effects in Silicon-germanium Heterojunction Bipolar Transistors by : Shiming Zhang

Download or read book Geometrical Scaling and Radiation Effects in Silicon-germanium Heterojunction Bipolar Transistors written by Shiming Zhang and published by . This book was released on 2002 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-germanium Devices and Circuits for High Temperature Applications

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Author : Dylan Buxton Thomas
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (668 download)

Book Synopsis Silicon-germanium Devices and Circuits for High Temperature Applications by : Dylan Buxton Thomas

Download or read book Silicon-germanium Devices and Circuits for High Temperature Applications written by Dylan Buxton Thomas and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of SiGe technology for cryogenic and radiation-intense environments is well known, yet SiGe has been generally overlooked for applications involving extreme high temperature operation. This work is an investigation into the potential capabilities of SiGe technology for operation up to 300°C, including the development of packaging and testing procedures to enable the necessary measurements. At the device level, SiGe heterojunction bipolar transistors (HBTs), field-effect transistors (FETs), and resistors are verified to maintain acceptable functionality across the temperature range, laying the foundation for high temperature circuit design. This work also includes the characterization of existing bandgap references circuits, redesign for high temperature operation, validation, and further optimization recommendations. In addition, the performance of temperature sensor, operational amplifier, and output buffer circuits under extreme high temperature conditions is presented. To the author's knowledge, this work represents the first demonstration of functional circuits from a SiGe technology platform in ambient temperatures up to 300°C; furthermore, the optimized bandgap reference presented in this work is believed to show the best performance recorded across a 500°C range in a bulk-silicon technology platform.

Silicon Heterostructure Handbook

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Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420026585
Total Pages : 1248 pages
Book Rating : 4.4/5 (2 download)

Book Synopsis Silicon Heterostructure Handbook by : John D. Cressler

Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Silicon Germanium Heterojunction Bipolar Transistors

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Author : Staffan Bruce
Publisher :
ISBN 13 : 9789155445584
Total Pages : 0 pages
Book Rating : 4.4/5 (455 download)

Book Synopsis Silicon Germanium Heterojunction Bipolar Transistors by : Staffan Bruce

Download or read book Silicon Germanium Heterojunction Bipolar Transistors written by Staffan Bruce and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology

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Author : Adnan Ahmed
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (62 download)

Book Synopsis Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology by : Adnan Ahmed

Download or read book Study of Low-temperature Effects in Silicon-germanium Heterojunction Bipolar Transistor Technology written by Adnan Ahmed and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis investigates the effects of low temperatures on Silicon Germanium (SiGe) Hterojunction Bipolar Transistors (HBT) BiCMOS technology. A comprehensive set of dc measurements were taken on first, second, third and fourth generation IBM SiGe technology over a range of temperatures (room temperature to 43K for first generation, and room temperature to 15K for the rest). This work is unique in the sense that this sort of comprehensive study of dc characteristics on four SiGe HBT technology generations over a wide range of temperatures has never been done before to the best of the author's knowledge.

Silicon Heterostructure Devices

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Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066919
Total Pages : 472 pages
Book Rating : 4.4/5 (2 download)

Book Synopsis Silicon Heterostructure Devices by : John D. Cressler

Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Design and Realization of Bipolar Transistors

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Author : Peter Ashburn
Publisher :
ISBN 13 :
Total Pages : 222 pages
Book Rating : 4.:/5 (51 download)

Book Synopsis Design and Realization of Bipolar Transistors by : Peter Ashburn

Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.

Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches

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Author : Tommy Rosenbaum
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (982 download)

Book Synopsis Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches by : Tommy Rosenbaum

Download or read book Performance Prediction of a Future Silicon-germanium Heterojunction Bipolar Transistor Technology Using a Heterogeneous Set of Simulation Tools and Approaches written by Tommy Rosenbaum and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified.

Dissertation Abstracts International

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Author :
Publisher :
ISBN 13 :
Total Pages : 676 pages
Book Rating : 4.F/5 ( download)

Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1997 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Vertical Profile Engineering and Reliability Study of Silicon-germanium Heterojunction Bipolar Transistors

Author : Kenneth Sen-Chun Liao
Publisher :
ISBN 13 :
Total Pages : 282 pages
Book Rating : 4.:/5 (348 download)

Book Synopsis Vertical Profile Engineering and Reliability Study of Silicon-germanium Heterojunction Bipolar Transistors by : Kenneth Sen-Chun Liao

Download or read book Vertical Profile Engineering and Reliability Study of Silicon-germanium Heterojunction Bipolar Transistors written by Kenneth Sen-Chun Liao and published by . This book was released on 1996 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: