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Core Level Photoemission Spectroscopy Of Metal And Semiconductor Interfaces
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Book Synopsis Core-Level Photoemission Spectroscopy of Metal and Semiconductor Interfaces by :
Download or read book Core-Level Photoemission Spectroscopy of Metal and Semiconductor Interfaces written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of the group from NCSU-Rutgers (Jack Rowe's group, in collaboration with Ted Madey) is to use core level photoemission to study inerfaces and surfaces of electronic materials and metallic systems. There is also an effort to upgrade this beamline to a Spherical Grating Monochromator (SGM) which is being performed in collaboration with Steve Hulbert of NSLS. Since gate oxides used in current devices have continued to decrease in thickness with corresponding improvements in oxide growth, processing and device properties, we have reinvestigated the issue of the interface of SiO2/Si(111) using the current state-of-the-art methods of gate oxide growth. The Si(2p) core level has a relatively large chemical shift which is nearly ideal for identifying the interface oxide states with SXPS. The bulk Si(2p) binding energy for Si(111) is 99.3 eV and the bulk Si(2p) oxide value for film thickness 30 A SiO2 is 103.7eV. 1 The binding energies of the three interface-shifted peaks are intermediate between these values. These have been assigned by Himpsel et al. 2 as the intermediate oxidation states of Si atoms usually labeled Si1+, Si2+ and Si3+ with the bulk Si peak labeled SiO and the bulk oxide peak labeled Si4+. BeamlineU4A has just completed the first phase of a major upgrade. As part of the DOE Facilities Initiative, we are adding spherical gratings and a movable exit slit to the beamline, replacing the toroidal gratings and fixed slits to achieve a spherical toroidal grating monochromator (STGM). More detailed information has become a vital concern in correlators photoemission studies that were started a few years ago. For example, the reconstruction of Si surfaces results in poorly resolved surface-atom core-electron binding-energy shifts that are not readily determined without reliable information about the instrumental width.
Book Synopsis High Resolution Core-Level Photoemission Spectroscopy of Semiconductor-Oxide and Metal-Metal Interfaces by :
Download or read book High Resolution Core-Level Photoemission Spectroscopy of Semiconductor-Oxide and Metal-Metal Interfaces written by and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this project is the characterization of two types of interfaces of technological importance: SiO2/Si interfaces relevant to ultra thin gate oxides used for next-generation semiconductor electronics, and bimetallic interfaces (ultra thin films of metals on other metals) that have potential catalytic applications. The main tool is high resolution soft x-ray photoemission spectroscopy (SXPS) using synchrotron radiation at the National Synchrotron Light Source (NSLS). Device-grade films of silicon dioxide and silicon nitride have been grown on Si substrates and new insights into the control of interface electronic state density are found. In addition, SXPS has provided new results on the stability of transition metal films on tungsten substrates: monolayers of Pt, Pd, Ir, Rh are thermally stable, but multilayer films of the same metals form surface alloys.
Book Synopsis Scanning Tunneling Microscopy and Synchrotron Photoemission Spectroscopy of Metal-semiconductor Interfaces by : Brian Michael Trafas
Download or read book Scanning Tunneling Microscopy and Synchrotron Photoemission Spectroscopy of Metal-semiconductor Interfaces written by Brian Michael Trafas and published by . This book was released on 1990 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Properties of Semiconductor Interfaces by : Winfried Mönch
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Book Synopsis Semiconductor Surfaces and Interfaces by : Winfried Mönch
Download or read book Semiconductor Surfaces and Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2001-04-10 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.
Book Synopsis Metallization and Metal-Semiconductor Interfaces by : Inder P. Batra
Download or read book Metallization and Metal-Semiconductor Interfaces written by Inder P. Batra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.
Book Synopsis Semiconductor Interfaces: Formation and Properties by : Guy LeLay
Download or read book Semiconductor Interfaces: Formation and Properties written by Guy LeLay and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Book Synopsis Quantitative Core Level Photoelectron Spectroscopy by : Juan A Colón Santana
Download or read book Quantitative Core Level Photoelectron Spectroscopy written by Juan A Colón Santana and published by Morgan & Claypool Publishers. This book was released on 2016-01-01 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoemission (also known as photoelectron) spectroscopy refers to the process in which an electron is removed from a specimen after the atomic absorption of a photon. The first evidence of this phenomenon dates back to 1887 but it was not until 1905 that Einstein offered an explanation of this effect, which is now referred to as ""the photoelectric effect"". Quantitative Core Level Photoelectron Spectroscopy: A Primer tackles the pragmatic aspects of the photoemission process with the aim of introducing the reader to the concepts and instrumentation that emerge from an experimental approach. The basic elements implemented for the technique are discussed and the geometry of the instrumentation is explained. The book covers each of the features that have been observed in the X-ray photoemission spectra and provides the tools necessary for their understanding and correct identification. Charging effects are covered in the penultimate chapter with the final chapter bringing closure to the basic uses of the X-ray photoemission process, as well as guiding the reader through some of the most popular applications used in current research.
Book Synopsis Chemisorption of Semiconductors on Metal Surfaces by : Yeh Chang
Download or read book Chemisorption of Semiconductors on Metal Surfaces written by Yeh Chang and published by . This book was released on 1989 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal written by J.-J. Yeh and published by . This book was released on 1987 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Lectures On Solid Surfaces And Interfaces - Proceedings Of The International School On Surface Physics by : D S Wang
Download or read book Lectures On Solid Surfaces And Interfaces - Proceedings Of The International School On Surface Physics written by D S Wang and published by World Scientific. This book was released on 1990-11-02 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings contains 9 lectures given by active research scientists, introducing the latest developments in the field of surface physics. The main topics cover both experimental and theoretical aspects of the atomic and electronic structure of semiconductor surface, its characterization by direct and inverse photoemission and STM, chemisorption and bonding on semiconductor, growth of III-V compound semiconductor and metal surface, metal-semiconductor interface and metal silicides.
Book Synopsis Initial Stage of Schottky Barrier Formation of Metal/III-V Semiconductor Interfaces by : Guan'gen Qin
Download or read book Initial Stage of Schottky Barrier Formation of Metal/III-V Semiconductor Interfaces written by Guan'gen Qin and published by . This book was released on 1986 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hard X-ray Photoelectron Spectroscopy (HAXPES) by : Joseph Woicik
Download or read book Hard X-ray Photoelectron Spectroscopy (HAXPES) written by Joseph Woicik and published by Springer. This book was released on 2015-12-26 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.
Book Synopsis Synchrotron Radiation Studies of MBE-Grown Semiconductor and Metal Surfaces and Interfaces by : Rudolf Ludeke
Download or read book Synchrotron Radiation Studies of MBE-Grown Semiconductor and Metal Surfaces and Interfaces written by Rudolf Ludeke and published by . This book was released on 1986 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work for the contract period addressed the physics and chemistry underlying the formation of the electronic structure at semiconductor oxide and semiconductor metal interfaces. Using photoemission spectroscopy a new oxidation model has been proposed for GaAs and InP. Extensive studies of transition metals deposited on GaAs and InP led to the first concrete identification of interface states responsible for the formation of the Schottky barrier, namely d-derived impurity levels of transition metal atoms in the semiconductor. Keywords: Gallium Arsenide; Indium Phosphide; Antimony; Oxidation; Transition metals; Substitutional impurities; Schottky barrier; Ordered overlayer; Core level spectroscopy; Photoemission; Inverse photoemission; Line shape analysis; Spectral decompositions.
Book Synopsis The Molecule-Metal Interface by : Norbert Koch
Download or read book The Molecule-Metal Interface written by Norbert Koch and published by John Wiley & Sons. This book was released on 2013-02-08 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reviewing recent progress in the fundamental understanding of the molecule-metal interface, this useful addition to the literature focuses on experimental studies and introduces the latest analytical techniques as applied to this interface. The first part covers basic theory and initial principle studies, while the second part introduces readers to photoemission, STM, and synchrotron techniques to examine the atomic structure of the interfaces. The third part presents photoelectron spectroscopy, high-resolution UV photoelectron spectroscopy and electron spin resonance to study the electronic structure of the molecule-metal interface. In the closing chapter the editors discuss future perspectives. Written as a senior graduate or senior undergraduate textbook for students in physics, chemistry, materials science or engineering, the book's interdisciplinary approach makes it equally relevant for researchers working in the field of organic and molecular electronics.
Book Synopsis Metal-semiconductor Interfaces by : Akio Hiraki
Download or read book Metal-semiconductor Interfaces written by Akio Hiraki and published by IOS Press. This book was released on 1995 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference by : J Pollman
Download or read book Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
