Controlled Growth of Semiconductor Nanostructures and Their Optical and Electrical Properties

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Publisher :
ISBN 13 :
Total Pages : 432 pages
Book Rating : 4.:/5 (35 download)

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Book Synopsis Controlled Growth of Semiconductor Nanostructures and Their Optical and Electrical Properties by : Haoquan Yan

Download or read book Controlled Growth of Semiconductor Nanostructures and Their Optical and Electrical Properties written by Haoquan Yan and published by . This book was released on 2005 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Nanostructures

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Publisher : Springer Science & Business Media
ISBN 13 : 3540778993
Total Pages : 369 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Semiconductor Nanostructures by : Dieter Bimberg

Download or read book Semiconductor Nanostructures written by Dieter Bimberg and published by Springer Science & Business Media. This book was released on 2008-06-03 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.

Oxide and Nitride Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3540888470
Total Pages : 525 pages
Book Rating : 4.5/5 (48 download)

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Book Synopsis Oxide and Nitride Semiconductors by : Takafumi Yao

Download or read book Oxide and Nitride Semiconductors written by Takafumi Yao and published by Springer Science & Business Media. This book was released on 2009-03-20 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.

Advances in Semiconductor Nanostructures

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Publisher : Elsevier
ISBN 13 : 0128105135
Total Pages : 553 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Advances in Semiconductor Nanostructures by : Alexander V. Latyshev

Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures Covers recent developments in the field from all over the world Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Synthesis, Electrical and Optical Characterization of Semiconductor Nanowires

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ISBN 13 :
Total Pages : 141 pages
Book Rating : 4.:/5 (715 download)

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Book Synopsis Synthesis, Electrical and Optical Characterization of Semiconductor Nanowires by : Xianwei Zhao

Download or read book Synthesis, Electrical and Optical Characterization of Semiconductor Nanowires written by Xianwei Zhao and published by . This book was released on 2010 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Over the past 15 years, nanowires (NWs) and nanotubes have drawn great attention since the application of VLS growth mechanism into the synthesis of one dimensional structures. Semiconductor nanowires exhibit novel electrical and optical properties. With a broad selection of composition and band structures, these one-dimensional semiconductor nanostructures are considered to be the critical components in a wide range of potential nanoscale device applications. To fully exploit these one-dimensional nanostructures, current research has focused on synthetic control of one-dimensional nanoscale building blocks, characterization of their novel properties, device fabrication based on nanowire building blocks, and integration of nanowire elements into complex functional architectures. Progress has been made in past two decades. However, there are still challenges in NWs growth controls, such as size, shape, position, stoichiometry and defects. Due to the dimensionality and possible quantum confinement effects of nanowires, there are also challenges in characterization and device fabrication. A systematic study of controlled growth of nanowires has been conducted in this dissertation. The first part of this dissertation presents various synthesis techniques of semiconductor nanowires via metal catalyzed vapor-liquid-solid (VLS) growth mechanism. Pulse laser deposition (PLD) with arsenic over pressure method has been successfully utilized for GaAs nanowires. Challenges such as uniformity issue commonly seen in MOCVD and MBE systems, morphology and stoichiometry issues commonly seen in conventional PLD systems have been overcome. Si nanowires fabrication via ultrahigh vacuum magnetron sputtering has reported for the first time, which also provides an alternate route for Si nanowires synthesis. The second part of this dissertation discusses optical properties of ensemble direct band gap nanowires. Photoluminescence spectra have been measured on an ensemble of random orientated InP nanowires. Polarization anisotropy has been explored on ensemble nanowires and oxide-coated nanowires. Our calculation for randomly oriented nanowires agrees well with experimental results. The control of polarization anisotropy of nanowires is realized by coating nanowires with an oxide layer composed of matching dielectric constant media. This opens a path to optical spin injection and detection on direct band gap nanowires.

Oxide and Nitride Semiconductors

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Publisher : Springer
ISBN 13 : 9783540888468
Total Pages : 518 pages
Book Rating : 4.8/5 (884 download)

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Book Synopsis Oxide and Nitride Semiconductors by : Takafumi Yao

Download or read book Oxide and Nitride Semiconductors written by Takafumi Yao and published by Springer. This book was released on 2009-04-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.

Studies of the Growth Conditions, Plasmonic and Magnetoplasmonic Properties of Semiconductor Nanostructures

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ISBN 13 :
Total Pages : 85 pages
Book Rating : 4.:/5 (19 download)

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Book Synopsis Studies of the Growth Conditions, Plasmonic and Magnetoplasmonic Properties of Semiconductor Nanostructures by : Yunyan Wang

Download or read book Studies of the Growth Conditions, Plasmonic and Magnetoplasmonic Properties of Semiconductor Nanostructures written by Yunyan Wang and published by . This book was released on 2019 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: Magnetoplasmonic nanostructures, as a branch of multifunctional materials, have recently attracted research interests due to the coexistence of magnetic and plasmonic properties.1-4 To accomplish the simultaneous control of both functionalities, appropriate design of the material construction is necessary. This study attempts to explore the magneto-optical properties of plasmonic semiconductor nanocrystals (NCs), specifically the behavior of the excitonic transition and its correlation with the magnetoplasmonic properties of NCs. Furthermore, considering the potential application for spintronic devices, one-dimensional nanowires (NWs) is one of the best platforms,as they have been widely exploited in optoelectronic and magnetoelectronic devices. Thus, the growth of plasmonic semiconductor nanowires is worthwhile to investigate. The influence of localized surface plasmon resonance (LSPR) on magneto-optical properties are investigated in doped zinc oxide (ZnO) semiconductor NCs. ZnO, as a sort of n-type transparent conductive oxide (TCO), is an earth-abundant semiconductor with a direct band gap of 3.37 eV. In this study, indium-doped ZnO (IZO) and aluminum-doped ZnO (AZO) NCs have been successfully synthesized across various doping concentrations and all samples exhibit LSPR in the near-to-mid infrared region. For IZO NCs, the most intense plasmon absorption band is achieved for the sample with a starting In doping concentration at 10 %. A reduction of plasmon peak intensity occurs with a further increase of starting dopants concentration. However, for AZO NCs, the plasmon band continues to increase up to 30 % starting Al/Zn atomic ratio due to poor doping efficiency. The apparent blue shift of the band gap for both IZO and AZO NCs have been observed due to the Burstein-Moss effect. In the magnetic circular dichroism (MCD) spectra, the splitting of the excitonic transition under the external magnetic field indicates the complete polarization of free carriers, which could be attributed to the phonon-mediated plasmon-exciton coupling. More importantly, the carrier polarization induced by plasmon-exciton coupling could be maintained at room temperature and low magnetic field (less than 1 T) showing great potential for its applications into new spintronic and optoelectronic devices. In addition, the optimal growth conditions of gallium phosphide (GaP) NWs by the chemical vapor deposition (CVD) method are discussed as the initial step towards the synthesis of plasmonic III-V NWs. The growth of GaP NWs is generally accompanied by the unintentional formation of thick oxide coating, which may compromise the optical and electrical properties of NWs. Controlling and eliminating the as-formed outer layer during thermal evaporation growth of GaP NWs represents a barrier to the simple and scalable preparation of this technologically important material. The second part of this study systematically investigated the role of different parameters (temperature, hydrogen flow rate, and starting P/Ga ratio) in the synthesis of GaP nanowires, and mapped out the conditions for the growth of oxide-layer-free nanowires. Increasing all three parameters leads to diminished oxide layer thickness and improved nanowire morphology. Long and straight nanowires with near perfect stoichiometry and the complete absence of oxide outer layer are obtained for 1050 ʻC, 100 sccm hydrogen flow rate, and P/Ga flux ratio of 2.

Semiconductor Nanowires

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Publisher : Royal Society of Chemistry
ISBN 13 : 1782625208
Total Pages : 463 pages
Book Rating : 4.7/5 (826 download)

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Book Synopsis Semiconductor Nanowires by : Wei Lu

Download or read book Semiconductor Nanowires written by Wei Lu and published by Royal Society of Chemistry. This book was released on 2014-12-02 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires were initially discovered in late 90's and since then there has been an explosion in the research of their synthesis and understanding of their structures, growth mechanisms and properties. The realisation of their unique electrical, optical and mechanical properties has led to a great interest for their use in electronics, energy generation and storage. This book provides a timely reference on semiconductor nanowires including an introduction to their synthesis and properties and specific chapters focusing on the different applications including photovoltaics, nanogenerators, transistors, biosensors and photonics. This is the first book dedicated to Semiconductor Nanowires and provides an invaluable resource for researchers already working in the area as well as those new to the field. Edited by leading experts in the field and with contributions from well-known scientists, the book will appeal to both those working on fundamental nanomaterial research and those commercially interested in their applications.

Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics

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Publisher : Elsevier Science
ISBN 13 : 9780080463254
Total Pages : 841 pages
Book Rating : 4.4/5 (632 download)

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Book Synopsis Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics by : Mohamed Henini

Download or read book Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics written by Mohamed Henini and published by Elsevier Science. This book was released on 2008 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1969, Leo Esaki (1973 Nobel Laureate) and Ray Tsu from IBM, USA, proposed research on “man-made crystals” using a semiconductor superlattice (a semiconductor structure comprising several alternating ultra-thin layers of semiconductor materials with different properties). This invention was perhaps the first proposal to advocate the engineering of a new semiconductor material, and triggered a wide spectrum of experimental and theoretical investigations. However, the study of what are now called low dimensional structures (LDS) began in the late 1970's when sufficiently thin epitaxial layers were first produced following developments in the technology of epitaxial growth of semiconductors, mainly pioneered in industrial laboratories for device purposes. The LDS are materials structures whose dimensions are comparable with inter-atomic distances in solids (i.e. nanometre, nm). Their electronic properties are significantly different from the same material in bulk form. These properties are changed by quantum effects. At the inception of their investigation it was already clear that such structures were of great scientific interest and excitement and their novel properties caused by quantum effects offered potential for application in new devices. Moreover these complex LDS offer device engineers new design opportunities for tailor-made new generation electronic devices. The LDS could be considered as a new branch of condensed matter physics because of the large variety of possible structures and the changes in the physical processes. One of the promising fabrication methods to produce and study structures with a dimension less than two such as quantum wires and quantum dots, in order to realise novel devices that make use of low-dimensional confinement effects, is self-organisation. Self-assembled nanostructured materials offer a number of advantages over conventional material technologies in a wide-range of sectors. Clearly, future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. Key Features: - Contributors are world leaders in the field - Brings together all the factors which are essential in self-organisation of quantum nanostructures - Reviews the current status of research and development in self-organised nanostructured materials - Provides a ready source of information on a wide range of topics - Useful to any scientist who is involved in nanotechnology - Excellent starting point for workers entering the field - Serves as an excellent reference manual

Semiconductor and Metal Nanocrystals

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Publisher : CRC Press
ISBN 13 : 9780203913260
Total Pages : 512 pages
Book Rating : 4.9/5 (132 download)

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Book Synopsis Semiconductor and Metal Nanocrystals by : Victor I. Klimov

Download or read book Semiconductor and Metal Nanocrystals written by Victor I. Klimov and published by CRC Press. This book was released on 2003-11-07 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: The vast technological potential of nanocrystalline materials, as well as current intense interest in the physics and chemistry of nanoscale phenomena, has led to explosive growth in research on semiconductor nanocrystals, also known as nanocrystal quantum dots, and metal nanoparticles. Semiconductor and Metal Nanocrystals addresses current topics impacting the field including synthesis and assembly of nanocrystals, theory and spectroscopy of interband and intraband optical transitions, single-nanocrystal optical and tunneling spectroscopies, electrical transport in nanocrystal assemblies, and physical and engineering aspects of nanocrystal-based devices. Written by experts who have contributed pioneering research, this reference comprises key advances in the field of semiconductor nanocrystal quantum dots and metal nanoparticles over the past several years. Focusing specifically on nanocrystals generated through chemical techniques, Semiconductor and Metal Nanocrystals Merges investigative frontiers in physics, chemistry, and engineering Documents advances in nanocrystal synthesis and assembly Explores the theory of electronic excitations in nanoscale particles Presents comprehensive information on optical spectroscopy of interband and intraband optical transitions Reviews data on single-nanocrystal optical and tunneling spectroscopies Weighs controversies related to carrier relaxation dynamics in ultrasmall nanoparticles Discusses charge carrier transport in nanocrystal assemblies Provides examples of lasing and photovoltaic nanocrystal-based devices Semiconductor and Metal Nanocrystals is a must read for scientists, engineers, and upper-level undergraduate and graduate students interested in the physics and chemistry of nanoscale semiconductor and metal particles, as well as general nanoscale science.

Semiconductor Nanocrystals and Metal Nanoparticles

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Publisher : CRC Press
ISBN 13 : 1315357003
Total Pages : 732 pages
Book Rating : 4.3/5 (153 download)

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Book Synopsis Semiconductor Nanocrystals and Metal Nanoparticles by : Tupei Chen

Download or read book Semiconductor Nanocrystals and Metal Nanoparticles written by Tupei Chen and published by CRC Press. This book was released on 2016-10-14 with total page 732 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next generation of electronic, optoelectronic, and photonic devices. Covering this rapidly developing and interdisciplinary field, the book examines in detail the physical properties and device applications of semiconductor nanocrystals and metal nanoparticles. It begins with a review of the synthesis and characterization of various semiconductor nanocrystals and metal nanoparticles and goes on to discuss in detail their optical, light emission, and electrical properties. It then illustrates some exciting applications of nanoelectronic devices (memristors and single-electron devices) and optoelectronic devices (UV detectors, quantum dot lasers, and solar cells), as well as other applications (gas sensors and metallic nanopastes for power electronics packaging). Focuses on a new class of materials that exhibit fascinating physical properties and have many exciting device applications. Presents an overview of synthesis strategies and characterization techniques for various semiconductor nanocrystal and metal nanoparticles. Examines in detail the optical/optoelectronic properties, light emission properties, and electrical properties of semiconductor nanocrystals and metal nanoparticles. Reviews applications in nanoelectronic devices, optoelectronic devices, and photonic devices.

Nanowires and Nanobelts

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Publisher : Springer Science & Business Media
ISBN 13 : 9780387287058
Total Pages : 500 pages
Book Rating : 4.2/5 (87 download)

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Book Synopsis Nanowires and Nanobelts by : Zhong Lin Wang

Download or read book Nanowires and Nanobelts written by Zhong Lin Wang and published by Springer Science & Business Media. This book was released on 2005-09-29 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). The objective of this volume is to cover the synthesis, properties and device applications of nanowires based on metal and semiconductor materials. The volume starts with a review on novel electronic and optical nanodevices, nanosensors and logic circuits that have been built using individual nanowires as building blocks. Then, the theoretical background for electrical properties and mechanical properties of nanowires is given. The molecular nanowires, their quantized conductance, and metallic nanowires synthesized by chemical technique will be introduced next. Finally, the volume covers the synthesis and properties of semiconductor and nitrides nanowires.

Controlled Synthesis of Chalcogenide and Halide Perovskite Semiconductor Nanostructures

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ISBN 13 :
Total Pages : 79 pages
Book Rating : 4.:/5 (12 download)

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Book Synopsis Controlled Synthesis of Chalcogenide and Halide Perovskite Semiconductor Nanostructures by : Dandan Zhang

Download or read book Controlled Synthesis of Chalcogenide and Halide Perovskite Semiconductor Nanostructures written by Dandan Zhang and published by . This book was released on 2017 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanomaterials have become an important class of materials with great potential for applications ranging from catalytic to electronic and optoelectronic devices. For next generation catalytic, optoelectronic, and photonic applications, the synthesis of high-qualify nanomaterials with uniform size, well-defined morphology, composition, and surface chemistry is of key importance, because the electrical, optical, and magnetic properties of these nanomaterials are strongly dependent on those parameters. Besides technical interests, access to defined nanoscale structures is also essential for uncovering their intrinsic properties unaffected by sample heterogeneity. Rigorous understanding of the properties of individual nanocrystals will enable us to exploit them, making it possible to better design and build novel electronic, magnetic, and photonic devices and other functional materials based on these nanostructures. This dissertation explores both direct synthetic methods and post transformation approaches for rational synthesis of new nanomaterial systems, which are potential candidates for applications in areas of photovoltaics, non-noble-metal plasmonics, light emitting diodes, etc. And their structural, optical, and electrical properties have been investigated in detail. Chapter 1 provides an introduction to the current progress and common strategies used in rational control of the size, shape, composition, and surface chemistry of nanomaterials. Chapter 2 examines the Cu+ cation-exchange mechanisms in CdS nanowires. A detailed transformation diagram of cation-exchange chemistry from CdS to Cu2-xS nanowires is reported. By varying the reaction time and the reactants' concentration ratio, the progression of the cation-exchange process was captured, and tunable crystal phases of the Cu2-xS are achieved. The overall process occurs in three stages: formation of discontinuous Cu2-xS islands, formation of core-shell CdS-Cu2-xS heterostructures, and complete conversion to Cu2-xS nanowires with controllable crystal phases. Detailed structural characterization reveal that the resultant Cu2-xS phases become more stoichiometric with increasing reaction time and copper precursor concentration. This experimental result suggests a kinetically controlled process limited by diffusion. In Chapter 3, a catalyst-free, solution-phase approach has been developed to obtain single crystalline, orthorhombic CsPbX3 NWs with uniform growth direction. The morphological evolution of the CsPbBr3 nanostructures along the reaction has been investigated, and the reaction protocol has been optimized to achieve a high yield of monodispersed nanowires likely due to a soft template mechanism. The direct synthesized CsPbI3 NWs show a room-temperature stable double-chain phase, with weak photoluminescence mainly from the trap states. Anion-exchange reaction by using the monodispersed CsPbBr3 NWs as templates can retain the favorable corner-sharing orthorhombic phase, and independently control the NW compositions, thus access to a wide range of compositions with bright and tunable photoluminescence spanning over nearly the entire visible spectrum. Meanwhile, surface treatment with the original precursors was performed to effectively passivate the surface states, and improve the quantum yield to over 10 times. In Chapter 4, a stepwise purification method has been developed to purify the ultrathin CsPbX3 NWs with a uniform diameter of 2.2±0.2 nm. The structural and optical properties have been discussed. Aberration-corrected high-resolution TEM shows the NWs are single crystalline, absorption and fluorescence spectrum shows that those NWs possess strong two-dimensional quantum confinement effects along with bright emission. The band gap of these ultrathin NWs can be tuned by anion-exchange reaction.

Dissertation Abstracts International

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Publisher :
ISBN 13 :
Total Pages : 868 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Growth and Secondary Engineering of II-VI Semiconductor Nanostructures and Their Optical Properties

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Publisher :
ISBN 13 :
Total Pages : 358 pages
Book Rating : 4.:/5 (237 download)

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Book Synopsis Growth and Secondary Engineering of II-VI Semiconductor Nanostructures and Their Optical Properties by : 李艷青

Download or read book Growth and Secondary Engineering of II-VI Semiconductor Nanostructures and Their Optical Properties written by 李艷青 and published by . This book was released on 2008 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Nanophotonics

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Publisher : Springer Nature
ISBN 13 : 3030356566
Total Pages : 572 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Semiconductor Nanophotonics by : Michael Kneissl

Download or read book Semiconductor Nanophotonics written by Michael Kneissl and published by Springer Nature. This book was released on 2020-03-10 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the state-of-the-art in the development of semiconductor nanostructures and nanophotonic devices. It covers epitaxial growth processes for GaAs- and GaN-based quantum dots and quantum wells, describes the fundamental optical, electronic, and vibronic properties of nanomaterials, and addresses the design and realization of various nanophotonic devices. These include energy-efficient and high-speed vertical cavity surface emitting lasers (VCSELs) and ultra-small metal-cavity nano-lasers for applications in multi-terabus systems; silicon photonic I/O engines based on the hybrid integration of VCSELs for highly efficient chip-to-chip communication; electrically driven quantum key systems based on q-bit and entangled photon emitters and their implementation in real information networks; and AlGaN-based deep UV laser diodes for applications in medical diagnostics, gas sensing, spectroscopy, and 3D printing. The experimental results are accompanied by reviews of theoretical models that describe nanophotonic devices and their base materials. The book details how optical transitions in the active materials, such as semiconductor quantum dots and quantum wells, can be described using a quantum approach to the dynamics of solid-state electrons under quantum confinement and their interaction with phonons, as well as their external pumping by electrical currents. With its broad and detailed scope, this book is indeed a cutting-edge resource for researchers, engineers and graduate-level students in the area of semiconductor materials, optoelectronic devices and photonic systems.

Characterization of Semiconductor Heterostructures and Nanostructures

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Publisher : Elsevier
ISBN 13 : 0080558151
Total Pages : 501 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors