Author :
Publisher :
ISBN 13 :
Total Pages : 15 pages
Book Rating : 4.:/5 (227 download)
Book Synopsis Comparison of Epitaxial Growth Techniques for III-V Layer Structures by :
Download or read book Comparison of Epitaxial Growth Techniques for III-V Layer Structures written by and published by . This book was released on 1992 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial processes are essential for the growth of III/V alloy semiconductors for electronic and photonic devices. For the growth of elaborately structured materials such as heterojunctions, quantum wells, and superlattices for the fabrication of the most advanced electronic and photonic devices, in particular, vapor phase growth processes have become standard. This paper will deal specifically with the epitaxial (mainly vapor phase) growth of III/V semiconductor materials. The approach taken here is somewhat non-traditional due to the recent hybridization of both precursor molecules and growth techniques. The distinctions between the various growth techniques are traditionally based on the nature of the precursor molecules. Chloride VPE uses chloride group III and and group V molecules and hydride VPE uses hydride group V precursors, while organometallic vapor phase epitaxy uses organometallic group III precursors and either hydride or organometallic group V precursors. Recently, we have developed group III precursors with both organic and Cl radicals on the same molecule. Similarly, group V precursors containing both organic and H radicals have been developed. Thus, it is unclear whether the techniques using such molecules should be called organometallic, chloride, or hydride VPE.
