Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors
Download Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors full books in PDF, epub, and Kindle. Read online Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Characterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors by : Nick Gengming Tao
Download or read book Characterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors written by Nick Gengming Tao and published by . This book was released on 2006 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.
Book Synopsis Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors by : Martin W. Dvorak
Download or read book Design, Fabrication and Characterization of Ultra High Speed InP/GaAsSb/InP Double Heterojunction Bipolar Transistors written by Martin W. Dvorak and published by . This book was released on 2001 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Development and Optimization of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistors by : Maria Alexandrova
Download or read book Development and Optimization of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistors written by Maria Alexandrova and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Simulation and Modelling of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors by :
Download or read book Design, Simulation and Modelling of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector, which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work, the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Then the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design. The degradation of device performance at high currents due to the formation of a parasitic barrier in the collector region and the base push out effects is examined. Finally, a device structure with improved high frequency performance is described.
Book Synopsis Development of High-speed, Type-II, GaAsSb/InP, Double-heterojunction Bipolar Transistors by : Benjamin Chu-Kung
Download or read book Development of High-speed, Type-II, GaAsSb/InP, Double-heterojunction Bipolar Transistors written by Benjamin Chu-Kung and published by . This book was released on 1972 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A GaAsSb/InP HBT circuit technology by :
Download or read book A GaAsSb/InP HBT circuit technology written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) structure has been defined, realized by MBE epitaxy, and optimized, thanks to simulation based on in-depth physical characterizations. A circuit-oriented technology has been developed, which has been validated by the design and fabrication of a full-rate (40 GHz clock) 40 Gbit/s D-FF.
Book Synopsis Design, Characterisation, and Numerical Simulation of Double Heterojunction Bipolar Transistors for Microwave Power Applications by : Mohammed Sotoodeh
Download or read book Design, Characterisation, and Numerical Simulation of Double Heterojunction Bipolar Transistors for Microwave Power Applications written by Mohammed Sotoodeh and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization, Modeling and Optimization of AlGaAs/GaAs Heterojunction Bipolar Transistors by : Madjid Hafizi-Esfahani
Download or read book Characterization, Modeling and Optimization of AlGaAs/GaAs Heterojunction Bipolar Transistors written by Madjid Hafizi-Esfahani and published by . This book was released on 1990 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optimization and Characterization of Indium Phosphide Based Heterojunction Bipolar Transistor by Thermal and Device Simulations by : Igor Lusetsky
Download or read book Optimization and Characterization of Indium Phosphide Based Heterojunction Bipolar Transistor by Thermal and Device Simulations written by Igor Lusetsky and published by . This book was released on 2005 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Compositionally-graded Indium Phosphide Based Type-II Double Heterojunction Bipolar Transistors by : William K. Snodgrass
Download or read book Fabrication and Characterization of Compositionally-graded Indium Phosphide Based Type-II Double Heterojunction Bipolar Transistors written by William K. Snodgrass and published by . This book was released on 2007 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski
Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Book Synopsis Fabrication and Characterization of GaAs/GaAsSb Heterojunction Bipolar Transistors for Wireless Communication Applications by : I-Ning Ku
Download or read book Fabrication and Characterization of GaAs/GaAsSb Heterojunction Bipolar Transistors for Wireless Communication Applications written by I-Ning Ku and published by . This book was released on 2001 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis AlSb-InAs-AlSb PnP Double-heterojunction Bipolar Transistors by : John Joseph Pekarik
Download or read book AlSb-InAs-AlSb PnP Double-heterojunction Bipolar Transistors written by John Joseph Pekarik and published by . This book was released on 1993 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits by : Urs Hammer
Download or read book Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits written by Urs Hammer and published by . This book was released on 2010 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 960 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
