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Author : Ajit Heble
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.:/5 (182 download)
Download or read book Characterization of the Insulated-gate Field-effect Transistor as a Four-terminal Device written by Ajit Heble and published by . This book was released on 1971 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mark Brown Barron
Publisher :
ISBN 13 :
Total Pages : 300 pages
Book Rating : 4.F/5 ( download)
Download or read book Computer Aided Analysis of Insulated Gate Field Effect Transistors written by Mark Brown Barron and published by . This book was released on 1969 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: The classical analysis of Insulated Gate Field-Effect Transistors (IGFET) is reviewed and the corresponding theory is compared with experimental characteristics. The limitations of this theory are indicated and the reasons for the limitations are explained in terms of the device physics. Two operating configurations which do not comply with the classical theory are subsequently analyzed with the aid of a digital computer; these are low-level current operation for gate voltages near threshold, and punch-through operation for short devices. The numerical data obtained from the low-level analysis is compared with experimental V-I characteristics, and it is shown that the device can be accurately modeled using the classical surface physics equations. Algebraic approximations, which offer certain advantages over numerical analysis, are shown to adequately describe transistor operation over certain current ranges. Derivations of the finite difference equations for numerical iterative analysis of the IGFET are described in detail. Certain stability problems are found to occur and methods for avoiding these are presented. Results of the analyses of short-channel devices are presented in the form of three-dimensional projections of the potential and carrier distributions. (Author).
Author : Larry J. Harrell
Publisher :
ISBN 13 :
Total Pages : 64 pages
Book Rating : 4.:/5 (227 download)
Download or read book A Digital Computer Analysis and Synthesis of Insulated Gate Field Effect Transistor Complementary Circuits written by Larry J. Harrell and published by . This book was released on 1969 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: A digital model of the insulated gate field effect transistor was proposed and used in the solution of two and three-element circuits. A number of circuits with desired characteristics were obtained by the method of variation of parameters in the model. (Author).
Author : Stanford University. Stanford Electronics Laboratories
Publisher :
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.F/5 ( download)
Download or read book An Accurate Model for the Short Channel Insulated Gate Field-effect Transistor written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1971 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: An accurate short channel Insulated gate field-effect transistor (IGFET) model is described which includes the effect of the drain depletion region on device characteristics in both triode and saturation regions. Calculation of deviations from the classical triode and saturation equations caused by interaction between the drain depletion region and the surface inversion region in devices constructed on lightly doped (
Author : Larry J. Harrell (CAPT, USAF.)
Publisher :
ISBN 13 :
Total Pages : 54 pages
Book Rating : 4.:/5 (132 download)
Download or read book A Digital Computer Analysis and Synthesis of Insulated Gate Field Effect Transistor Complementary Circuits written by Larry J. Harrell (CAPT, USAF.) and published by . This book was released on 1969 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dharmendra Singh Yadav
Publisher : CRC Press
ISBN 13 : 1003816266
Total Pages : 306 pages
Book Rating : 4.0/5 (38 download)
Download or read book Advanced Field-Effect Transistors written by Dharmendra Singh Yadav and published by CRC Press. This book was released on 2023-12-22 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Author : Byung-Eun Park
Publisher : Springer Nature
ISBN 13 : 9811512124
Total Pages : 421 pages
Book Rating : 4.8/5 (115 download)
Download or read book Ferroelectric-Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer Nature. This book was released on 2020-03-23 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Author : Badih El-Kareh
Publisher : Springer Science & Business Media
ISBN 13 : 1461322758
Total Pages : 583 pages
Book Rating : 4.4/5 (613 download)
Download or read book Introduction to VLSI Silicon Devices written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 583 pages. Available in PDF, EPUB and Kindle. Book excerpt: There was a long felt need for this book in industrial and academic institutions. It provides new engineers, as well as practicing engineers and advanced laboratory personnel in the field of semiconductors a clear and thorough discussion of state-of-the-art silicon devices, without resorting to the complexity of higher mathematics and physics. This difficult task was made possible by detailing the explanation of equations that describe the device operation and characteristics without endeavoring their full derivation. This is reinforced by several problems which reflect practical cases observed in the laboratory. The problems are given after introducing a major equation or concept. They are arranged in the order of the text rather than in the order of difficulty. The answers to most of the problems are given in order to enable the student to "self-check" the method used for the solutions. The illustrations may prove to be of great help to "newcomers" when dealing with the characterization of real devices and relating the measured data to device physics and process parameters. The new engineer will find the book equivalent to "on the job training" and acquire a working knowledge of the fundamental principles underlying silicon devices. For the engineer with theoretical background, it offers a means for direct application of solid state theory to device analysis and synthesis. The book originated from a set of notes developed for an in-house one-year course in Device Physics, Technology and Characterization at IBM.
Author : Patrick Roblin
Publisher : Cambridge University Press
ISBN 13 : 1139437461
Total Pages : 726 pages
Book Rating : 4.1/5 (394 download)
Download or read book High-Speed Heterostructure Devices written by Patrick Roblin and published by Cambridge University Press. This book was released on 2002-03-07 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
Author :
Publisher :
ISBN 13 :
Total Pages : 908 pages
Book Rating : 4.E/5 ( download)
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : William Gosling
Publisher :
ISBN 13 :
Total Pages : 166 pages
Book Rating : 4.3/5 (91 download)
Download or read book Field Effect Transistor Applications written by William Gosling and published by . This book was released on 1964 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Bing Jay Sheu
Publisher :
ISBN 13 :
Total Pages : 442 pages
Book Rating : 4.:/5 (29 download)
Download or read book MOS Transistor Modeling and Characterization for Circuit Simulation written by Bing Jay Sheu and published by . This book was released on 1985 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dr. R.K. Singh
Publisher : Firewall Media
ISBN 13 : 9788131802595
Total Pages : 700 pages
Book Rating : 4.8/5 (25 download)
Download or read book Basic Electronics Engineering & Devices written by Dr. R.K. Singh and published by Firewall Media. This book was released on 2007 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Byung-Jong Moon
Publisher :
ISBN 13 :
Total Pages : 486 pages
Book Rating : 4.:/5 (319 download)
Download or read book Unified Field Effect Transistor Modeling and Characterization for Computer-aided Design written by Byung-Jong Moon and published by . This book was released on 1991 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Campbell Sinclair
Publisher :
ISBN 13 :
Total Pages : 121 pages
Book Rating : 4.:/5 (86 download)
Download or read book Characterization of the Junction Gate Field-effect Transistor written by John Campbell Sinclair and published by . This book was released on 1967 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. Visvesvara Rao
Publisher : Pearson Education India
ISBN 13 : 9788131754283
Total Pages : 780 pages
Book Rating : 4.7/5 (542 download)
Download or read book Electronic Circuit Analysis written by B. Visvesvara Rao and published by Pearson Education India. This book was released on 2012 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronic Circuit Analysis is designed to serve as a textbook for a two semester undergraduate course on electronic circuit analysis. It builds on the subject from its basic principles over fifteen chapters, providing detailed coverage on the design and analysis of electronic circuits.
Author : Karna, Satish K.
Publisher : S. Chand Publishing
ISBN 13 : 932599223X
Total Pages : 772 pages
Book Rating : 4.3/5 (259 download)
Download or read book Analog ElectronicsGATE, PSUs and ES Examination written by Karna, Satish K. and published by S. Chand Publishing. This book was released on 2017 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book Analog ElectronicsGATE, PSUs and ES Examination has been designed after much consultation with the students preparing for these competitive examinations. A must buy for students preparing for GATE, PSUs and ES examinations, the book will be a good resource for students of BE/BTech programmes in the electronics engineering, electrical engineering, electrical and electronics engineering, and instrumentation engineering branches too. It will also be useful for the undergraduate students of sciences.
