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Characterization Of Structural And Electronic Properties Of Nanoscale Semiconductor Device Structures Using Cross Sectional Scanning Probe Microscopy
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Book Synopsis Characterization of Structural and Electronic Properties of Nanoscale Semiconductor Device Structures Using Cross-sectional Scanning Probe Microscopy by : Paul Arthur Rosenthal
Download or read book Characterization of Structural and Electronic Properties of Nanoscale Semiconductor Device Structures Using Cross-sectional Scanning Probe Microscopy written by Paul Arthur Rosenthal and published by . This book was released on 2002 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scanned Probe Characterization of Semiconductor Nanostructures by : James Jeremy MacDonald Law
Download or read book Scanned Probe Characterization of Semiconductor Nanostructures written by James Jeremy MacDonald Law and published by . This book was released on 2009 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in the synthesis of materials and device structures have accentuated the need to understand nanoscale electronic structure and its implications. Scanning probe microscopy offers a rich variety of highly spatially accurate techniques that can further our understanding of the interactions that occur in nanoscale semiconductor materials and devices. The promising nitride semiconductor materials system suffers from perturbations in local electronic structure due to crystallographic defects. Understanding the electronic properties and physical origin of these defects can be invaluable in mitigating their impacts or eliminating them all together. In the second chapter of this dissertation, scanning capacitance microscopy (SCM) is used to characterize local electronic structure in a-plane n-type gallium nitride. Analysis reveals the presence of a linear, positively charged feature aligned along the direction which likely corresponds to a partial dislocation at the edge of a stacking fault. In the third chapter, conductive atomic force microscopy is used to determine the effects of Ga/N flux on the conductive behavior of reverse-bias leakage paths in gallium nitride grown by molecular beam epitaxy (MBE). Our data reveal a band of fluxes near Ga/N ~̃ 1 for which these pathways cease to be observable. These observations suggest a method for controlling the primary source of reverse-bias Schottky contact leakage in n-type GaN grown by MBE. A deeper understanding of the interaction between macro-scale objects and nanoscale electronic properties is required to bring the exciting new possibilities that semiconductor nanowires offer to fruition. In the fourth chapter, SCM is used to examine the effects of micron-scale metal contacts on carrier modulation and electrostatic behavior in indium arsenide semiconductor nanowires. We interpret a pronounced dependence of capacitance spectra on distance between the probe tip and nanowire contact as a consequence of electrostatic screening of the tip-nanowire potential difference by the large metal contact. These results provide direct experimental verification of contact screening effects on the electronic behavior of nanowire devices and are indicative of the importance of accounting for the effect of large-scale contact and circuit elements on the characteristics of nanoscale electronic devices.
Book Synopsis Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials by : Paula M. Vilarinho
Download or read book Scanning Probe Microscopy: Characterization, Nanofabrication and Device Application of Functional Materials written by Paula M. Vilarinho and published by Springer Science & Business Media. This book was released on 2006-06-15 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the characteristic dimensions of electronic devices continue to shrink, the ability to characterize their electronic properties at the nanometer scale has come to be of outstanding importance. In this sense, Scanning Probe Microscopy (SPM) is becoming an indispensable tool, playing a key role in nanoscience and nanotechnology. SPM is opening new opportunities to measure semiconductor electronic properties with unprecedented spatial resolution. SPM is being successfully applied for nanoscale characterization of ferroelectric thin films. In the area of functional molecular materials it is being used as a probe to contact molecular structures in order to characterize their electrical properties, as a manipulator to assemble nanoparticles and nanotubes into simple devices, and as a tool to pattern molecular nanostructures. This book provides in-depth information on new and emerging applications of SPM to the field of materials science, namely in the areas of characterisation, device application and nanofabrication of functional materials. Starting with the general properties of functional materials the authors present an updated overview of the fundamentals of Scanning Probe Techniques and the application of SPM techniques to the characterization of specified functional materials such as piezoelectric and ferroelectric and to the fabrication of some nano electronic devices. Its uniqueness is in the combination of the fundamental nanoscale research with the progress in fabrication of realistic nanodevices. By bringing together the contribution of leading researchers from the materials science and SPM communities, relevant information is conveyed that allows researchers to learn more about the actual developments in SPM applied to functional materials. This book will contribute to the continuous education and development in the field of nanotechnology.
Book Synopsis Scanning Probe Characterization of Novel Semiconductor Materials and Devices by : Xiaotian Zhou
Download or read book Scanning Probe Characterization of Novel Semiconductor Materials and Devices written by Xiaotian Zhou and published by . This book was released on 2007 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: As semiconductor devices shrink in size, it becomes more important to characterize and understand electronic properties of the materials and devices at the nanoscale. Scanning probe techniques offers numerous advantages over traditional tools used for semiconductor materials and devices characterization including high spatial resolution, ease of use and multi-functionality for electrical characterization, such as current, potential and capacitance, etc.
Book Synopsis Microscopy of Semiconducting Materials 2007 by : A.G. Cullis
Download or read book Microscopy of Semiconducting Materials 2007 written by A.G. Cullis and published by Springer Science & Business Media. This book was released on 2008-12-02 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Book Synopsis Scanning Probe Microscopy of Functional Materials by : Sergei V Kalinin
Download or read book Scanning Probe Microscopy of Functional Materials written by Sergei V Kalinin and published by Springer. This book was released on 2016-04-01 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is a much-needed general overview of a rapidly developing field. It covers novel scanning probe microscopy (SPM) techniques that are used to characterize a wide range of functional materials, including complex oxides, biopolymers, and semiconductors.
Book Synopsis Nanoscale Electronic and Thermal Transport Properties in III-V/RE-V Nanostructures by : Keun Woo Park
Download or read book Nanoscale Electronic and Thermal Transport Properties in III-V/RE-V Nanostructures written by Keun Woo Park and published by . This book was released on 2013 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: The incorporation of rare earth-V (RE-V) semimetallic nanoparticles embedded in III-V compound semiconductors is of great interest for applications in solid-state devices including multijunction tandem solar cells, thermoelectric devices, and fast photoconductors for terahertz radiation sources and receivers. With regard to those nanoparticle roles in device applications and material itself, electrical and thermal properties of embedded RE-V nanoparticles, including nanoscale morphology, electronic structure, and electrical and thermal conductivity of such nanoparticles are essential to be understood to engineer their properties to optimize their influence on device performance. To understand embedded RE-V semimetallic nanostructures in III-V compound semiconductors, nanoscale characterization tools are essential for analysis their properties incorporated in compound semiconductors. In this dissertation, we used atomic force microscopy (AFM) with other secondary detection tools to investigate nanoscale material properties of semimetallic RE-V and GaAs heterostructures, grown by molecular beam epitaxy. We used scanning capacitance microscopy and conductive AFM techniques to understand electronic and electrical properties of ErAs/GaAs heterostructures. For the electrical properties, this thesis investigates details of statistical analysis of scanning capacitance and local conductivity images contrast to provide insights into (i) nanoparticle structure at length scales smaller than the nominal spatial resolution of the scanned probe measurement, and (ii) both lateral and vertical nanoparticle morphology at nanometer to atomic length scales, and their influence on electrical conductivity. To understand thermal properties of ErAs nanoparticles, in-plane and cross-sectional plane of ErAs/GaAs superlattice structure were investigated with a scanning probe microscopy technique implemented with 3[omega] method for thermal measurement. By performing detailed numerical modeling of thermal transport between thermal probe tip and employed samples, and estimation of additional phonon scattering induced by ErAs nanoparticles, we could understand influences of ErAs nanoparticles on the host GaAs thermal conductivity. Investigation of ErAs semimetallic nanostructure embedded in GaAs matrix with scanned probe microscopy provided detailed understanding of their electronic, electrical and thermal properties. In addition, this dissertation also demonstrates that an atomic force microscope with secondary detection techniques is promising apparatus to understand and investigate intrinsic properties of nanostructure materials, nanoscale charge transports, when the system is combined with detailed modeling and simulations.
Book Synopsis Scanning Probe Microscopy of Functional Materials by : Sergei V. Kalinin
Download or read book Scanning Probe Microscopy of Functional Materials written by Sergei V. Kalinin and published by Springer. This book was released on 2010-12-10 with total page 555 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this book is to provide a general overview of the rapidly developing field of novel scanning probe microscopy (SPM) techniques for characterization of a wide range of functional materials, including complex oxides, biopolymers, and semiconductors. Many recent advances in condensed matter physics and materials science, including transport mechanisms in carbon nanostructures and the role of disorder on high temperature superconductivity, would have been impossible without SPM. The unique aspect of SPM is its potential for imaging functional properties of materials as opposed to structural characterization by electron microscopy. Examples include electrical transport and magnetic, optical, and electromechanical properties. By bringing together critical reviews by leading researchers on the application of SPM to to the nanoscale characterization of functional materials properties, this book provides insight into fundamental and technological advances and future trends in key areas of nanoscience and nanotechnology.
Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Chiara Manfredotti
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Chiara Manfredotti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Peterson's Graduate Programs in the Physical Sciences, Mathematics, Agricultural Sciences, the Environment & Natural Resources 2012 by : Peterson's
Download or read book Peterson's Graduate Programs in the Physical Sciences, Mathematics, Agricultural Sciences, the Environment & Natural Resources 2012 written by Peterson's and published by Peterson's. This book was released on 2011-12-30 with total page 2059 pages. Available in PDF, EPUB and Kindle. Book excerpt: Graduate Programs in the Physical Sciences, Mathematics, Agricultural Sciences, the Environment & Natural Resources 2012 contains more than 2,900 graduate programs in 59 disciplines-including agriculture and food sciences, astronomy and astrophysics, chemistry, physics, mathematics, environmental sciences and management, natural resources, marine sciences, and more. This guide is part of Peterson's six-volume Annual Guides to Graduate Study, the only annually updated reference work of its kind, provides wide-ranging information on the graduate and professional programs offered by U.S.-accredited colleges and universities in the United States and throughout the world. Informative data profiles for more than 2,900 graduate programs in 59 disciplines, including facts and figures on accreditation, degree requirements, application deadlines and contact information, financial support, faculty, and student body profiles. Two-page in-depth descriptions, written by featured institutions, offer complete details on specific graduate programs, schools, or departments as well as information on faculty research and the college or university. Expert advice on the admissions process, financial support, and accrediting agencies. Comprehensive directories list programs in this volume, as well as others in the graduate series. Up-to-date appendixes list institutional changes since the last addition along with abbreviations used in the guide
Book Synopsis Peterson's Graduate Programs in the Physical Sciences 2011 by : Peterson's
Download or read book Peterson's Graduate Programs in the Physical Sciences 2011 written by Peterson's and published by Peterson's. This book was released on 2011-05-01 with total page 1166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Peterson's Graduate Programs in the Physical Sciences contains a wealth of information on colleges and universities that offer graduate work in Astronomy and Astrophysics, Chemistry, Geosciences, Marine Sciences and Oceanography, Meteorology and Atmospheric Sciences, and Physics. The institutions listed include those in the United States, Canada, and abroad that are accredited by U.S. accrediting bodies. Up-to-date information, collected through Peterson's Annual Survey of Graduate and Professional Institutions, provides valuable information on degree offerings, professional accreditation, jointly offered degrees, part-time and evening/weekend programs, postbaccalaureate distance degrees, faculty, students, degree requirements, entrance requirements, expenses, financial support, faculty research, and unit head and application contact information. As an added bonus, readers will find a helpful "See Close-Up" link to in-depth program descriptions written by some of these institutions. These Close-Ups offer detailed information about the physical sciences program, faculty members and their research, and links to the program or department's Web site. In addition, there are valuable articles on financial assistance and support at the graduate level and the graduate admissions process, with special advice for international and minority students. Another article discusses important facts about accreditation and provides a current list of accrediting agencies.
Book Synopsis Microscopy and Analysis by : Stefan G. Stanciu
Download or read book Microscopy and Analysis written by Stefan G. Stanciu and published by BoD – Books on Demand. This book was released on 2016-09-21 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microscopes represent tools of the utmost importance for a wide range of disciplines. Without them, it would have been impossible to stand where we stand today in terms of understanding the structure and functions of organelles and cells, tissue composition and metabolism, or the causes behind various pathologies and their progression. Our knowledge on basic and advanced materials is also intimately intertwined to the realm of microscopy, and progress in key fields of micro- and nanotechnologies critically depends on high-resolution imaging systems. This volume includes a series of chapters that address highly significant scientific subjects from diverse areas of microscopy and analysis. Authoritative voices in their fields present in this volume their work or review recent trends, concepts, and applications, in a manner that is accessible to a broad readership audience from both within and outside their specialist area.
Book Synopsis Nanoscale Structural Characterization of Oxide and Semiconductor Heterostructures by : Joonkyu Park
Download or read book Nanoscale Structural Characterization of Oxide and Semiconductor Heterostructures written by Joonkyu Park and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to a recent report from International Technology Roadmap for Semiconductors (ITRS), semiconductor industry based on silicon Complementary metal-oxide-semiconductor (CMOS) technology is facing challenges in terms of making the device faster with higher density and lower power consumption. To overcome the challenges, various methodologies are attempted using different state variables instead of electric charges, for example, polarization, phase states, and electron spin information. Different materials can also be chosen instead of silicon, for example, carbon, complex metal oxides in 1D or 2D nanostructure formations. A different concept of operating devices is also another option, for example, single electron transistors, spintronics, and quantum electronics. A tremendous number of stages during microfabrication manufacturing for integrated circuits consist of a series of deposition and etching processes. During these processes, unknown problems can arise from the design of their structural geometry. For example, unwanted strain distribution from the electrode patterns can change the electric properties of underlying materials regarding the decrease in charge carrier mobility or increase in leakage current in dielectrics, which all occur in nanoscale. So, it is important to understand the effects of structural phenomena on the electronic properties of materials using nanoscale characterization. The first work shows the changes in electronic property in Si quantum dot devices fabricated on Si/SiGe heterostructure is discussed. The electrode deposition process on the heterostructure surface is necessary for the device operation, but the electrodes also induce external nanoscale strain fields. These strain fields are transferred to the substrate materials via electrode edges and change electronic band structure. The magnitudes of the strain and their impact on changing the band structure are studied. In the second project, the alignment of ferroelectric polarization nanodomains in PbTiO3/SrTiO3 (PTO/STO) superlattice heterostructures is discussed. The PTO/STO nanostructure was created using a focused-ion beam technique. The domain alignment was observed using the x-ray nanodiffraction. A thermodynamic theoretical approach calculates the free energy density of the system to understand the origin of domain alignment. In the final project, the origin of photoinduced domain transformation in PTO/STO superlattices is discussed. Charged carriers are excited by the above-bandgap optical illumination, and transported by the internal electric fields arising from depolarization fields. These photoexcited charge carriers eventually screen the depolarization fields, and the initial striped nanodomain patterns transform to a uniform polarization state. After the end of illumination, the striped nanodomains patterns recover for a period of seconds at room temperature. The transformation time depends on the optical intensity, and the recovery time depends on the temperature. A charge trapping model with a theoretical calculation reveals that the charge trapping is a dominant process for the domain transformation, and the de-trapping process is for the recovery. Simulated domain intensity changes are in good agreements with the X-ray diffraction data.
Book Synopsis Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization by : Richard Haight
Download or read book Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization written by Richard Haight and published by World Scientific. This book was released on 2012 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.
Book Synopsis Low Dimensional Semiconductor Structures by : Hilmi Ünlü
Download or read book Low Dimensional Semiconductor Structures written by Hilmi Ünlü and published by Springer Science & Business Media. This book was released on 2012-09-12 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting with the first transistor in 1949, the world has experienced a technological revolution which has permeated most aspects of modern life, particularly over the last generation. Yet another such revolution looms up before us with the newly developed capability to control matter on the nanometer scale. A truly extraordinary research effort, by scientists, engineers, technologists of all disciplines, in nations large and small throughout the world, is directed and vigorously pressed to develop a full understanding of the properties of matter at the nanoscale and its possible applications, to bring to fruition the promise of nanostructures to introduce a new generation of electronic and optical devices. The physics of low dimensional semiconductor structures, including heterostructures, superlattices, quantum wells, wires and dots is reviewed and their modeling is discussed in detail. The truly exceptional material, Graphene, is reviewed; its functionalization and Van der Waals interactions are included here. Recent research on optical studies of quantum dots and on the physical properties of one-dimensional quantum wires is also reported. Chapters on fabrication of nanowire – based nanogap devices by the dielectrophoretic assembly approach. The broad spectrum of research reported here incorporates chapters on nanoengineering and nanophysics. In its presentation of tutorial chapters as well as advanced research on nanostructures, this book is ideally suited to meet the needs of newcomers to the field as well as experienced researchers interested in viewing colleagues’ recent advances.
Book Synopsis Advances in Scanning Probe Microscopy by : T. Sakurai
Download or read book Advances in Scanning Probe Microscopy written by T. Sakurai and published by Springer. This book was released on 2000-03-27 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a comprehensive presentation of the current knowledge on the electronic properties and manipulation of semiconductor surfaces. This book covers several of the most important and timely topics at the forefront of scanning probe microscopy, such as atom-resolving atomic force microscopy (AFM), application of atom manipulation for fabricating nanoscale and atomic scale structures, theoretical insights into Fullerenes, and atomic manipulation for future single-electron devices.
Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Newnes. This book was released on 2013-04-11 with total page 829 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures
