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Characterization Of Silicon Carbide Power Semiconductor Devices For High Temperature Operation
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Book Synopsis Characterization of Silicon Carbide Power Semiconductor Devices for High Temperature Operation by : Vichare Makarand
Download or read book Characterization of Silicon Carbide Power Semiconductor Devices for High Temperature Operation written by Vichare Makarand and published by . This book was released on 1996 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Book Synopsis Modern Silicon Carbide Power Devices by : B Jayant Baliga
Download or read book Modern Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific. This book was released on 2023-09-18 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide power devices are being increasingly adopted for many applications such as electric vehicles and charging stations. There is a large demand for a resource to learn and understand the basic physics of operation of these devices to create engineers with in depth knowledge about them.This unique compendium provides a comprehensive design guide for Silicon Carbide power devices. It systematically describes the device structures and analytical models for computing their characteristics. The device structures included are the Schottky diode, JBS rectifier, power MOSFET, JBSFET, IGBT and BiDFET. Unique structures that address achieving excellent voltage blocking and on-resistance are emphasized.This useful textbook and reference innovations for achieving superior high frequency operation and highlights manufacturing technology for the devices. The book will benefit professionals, academics, researchers and graduate students in the fields of electrical and electronic engineering, circuits and systems, semiconductors, and energy studies.
Book Synopsis High-Temperature Electronics by : Randall Kirschman
Download or read book High-Temperature Electronics written by Randall Kirschman and published by Wiley-IEEE Press. This book was released on 1998-09-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "HIGH-TEMPERATURE ELECTRONICS provides expert coverage of the applications, characteristics, design, selection, and operation of electronic devices and circuits at temperatures above the conventional limit of 125 degrees Celsius. This edited volume contains approximately 100 key reprinted papers covering a wide range of topics related to high-temperature electronics, eight invited papers, extensive references, and a comprehensive bibliography. Containing more than 200 pages of new material, it brings the reader a well-rounded review of high-temperature electronics from its beginnings decades ago through the present and beyond to possible future technologies. The scope of HIGH TEMPERATURE ELECTRONICS includes active components from standard and advanced semiconductor materials, passive components, as well as technologies for metallizations, interconnections, and the assembly and packaging of electronic components. This book will provide active researchers, technology developers, managers, materials scientists, and advanced students with a sound fundamental grounding in high-temperature electronics technology." Sponsored by: IEEE Components, Packaging, and Manufacturing Technology Society.
Book Synopsis Advancing Silicon Carbide Electronics Technology I by : Konstantinos Zekentes
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Book Synopsis Silicon Carbide for Semiconductors by : Gus J. Caras
Download or read book Silicon Carbide for Semiconductors written by Gus J. Caras and published by . This book was released on 1965 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga
Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Book Synopsis Processing and Characterization of Silicon Carbide (6H- and 4H-SiC) Contacts for High Power and High Temperature Device Applications by : Sang-Kwon Lee
Download or read book Processing and Characterization of Silicon Carbide (6H- and 4H-SiC) Contacts for High Power and High Temperature Device Applications written by Sang-Kwon Lee and published by . This book was released on 2002 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :National Aeronautics and Space Administration (NASA) Publisher :Createspace Independent Publishing Platform ISBN 13 :9781722766245 Total Pages :34 pages Book Rating :4.7/5 (662 download)
Book Synopsis Silicon Carbide Semiconductor Device Fabrication and Characterization by : National Aeronautics and Space Administration (NASA)
Download or read book Silicon Carbide Semiconductor Device Fabrication and Characterization written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-11 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated. Davis, R. F. and Das, K. Unspecified Center N00014-85-K-0182; NAG3-782...
Book Synopsis Silicon Carbide, Volume 2 by : Peter Friedrichs
Download or read book Silicon Carbide, Volume 2 written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Book Synopsis Characterization of Wide Bandgap Power Semiconductor Devices by : Fei Wang
Download or read book Characterization of Wide Bandgap Power Semiconductor Devices written by Fei Wang and published by Institution of Engineering and Technology. This book was released on 2018-09-05 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.
Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author :Committee on Materials for High-Temperature Semiconductor Devices Publisher :National Academies Press ISBN 13 :030959653X Total Pages :136 pages Book Rating :4.3/5 (95 download)
Book Synopsis Materials for High-Temperature Semiconductor Devices by : Committee on Materials for High-Temperature Semiconductor Devices
Download or read book Materials for High-Temperature Semiconductor Devices written by Committee on Materials for High-Temperature Semiconductor Devices and published by National Academies Press. This book was released on 1995-09-28 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Book Synopsis Silicon Carbide by : Moumita Mukherjee
Download or read book Silicon Carbide written by Moumita Mukherjee and published by BoD – Books on Demand. This book was released on 2011-10-10 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Book Synopsis Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices by :
Download or read book Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This research focuses on the design, characterization, modeling and analysis of high voltage Silicon Carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT) and emitter turn-off thyristors (ETO) to satisfy the stringent requirements of advanced power electronic systems. The loss information, frequency capability and switching ruggedness of these 10-kV SiC power devices are studied extensively in order to provide their application prospects in solid-state transformers (SST). Among 10-kV SiC power devices, SiC MOSFETs are of the greatest interest due to their lower specific on-resistance compared to silicon MOSFETs, and their inherently fast switching speed due to their majority carrier conduction mechanism. Therefore, 10-kV SiC MOSFETs are studied first in this dissertation. The characterization, modeling and analysis of 10-kV SiC MOSFETs were investigated extensively. The low losses and high switching frequency of 10-kV SiC MOSFETs were demonstrated in characterization study and a 4-kV 4 kW boost converter. The on-resistance of SiC MOSFETs increases rapidly with increased junction temperature and blocking voltage. This makes their conduction losses possibly unacceptable for applications where high DC supply voltages (more than 10-kV) and high temperature operation are used. This warrants the development of SiC bipolar devices (IGBTs and thyristors) to achieve smaller conduction losses due to the conductivity modulation of their thick drift layers, especially at elevated temperatures. Therefore, design, characterization and optimization of 10-kV SiC IGBT and ETO were dicussed. A 4H-SiC p-channel IGBT with improved conduction characteristics was developed and characterized experimentally as well as analyzed theoretically by numerical simulations. The device exhibited a differential on-resistance of 26 mOhm.cm^2 at a collector current density of 100 A/cm^2 at room temperature. An the SiC IGBT showed a turn-of.
Book Synopsis Wide Bandgap (SiC/GaN) Power Devices Characterization and Modeling by : Ke Li
Download or read book Wide Bandgap (SiC/GaN) Power Devices Characterization and Modeling written by Ke Li and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compared to traditional silicon (Si) semiconductor material, wide bandgap (WBG) materials like silicon carbide (SiC) and gallium nitride are gradually applied to fabricate power semiconductor devices, which are used in power converters to achieve high power efficiency, high operation temperature and high switching frequency. As those power devices are relatively new, their characterization and modeling are important to better understand their characteristics for better use. This dissertation is mainly focused on those WBG power semiconductor devices characterization, modeling and fast switching currents measurement. In order to measure their static characteristics, a single-pulse method is presented. A SiC diode and a "normally-off" SiC JFET is characterized by this method from ambient temperature to their maximal junction temperature with the maximal power dissipation around kilowatt. Afterwards, in order to determine power device inter-electrode capacitances, a measurement method based on the use of multiple current probes is proposed and validated by measuring inter-electrode capacitances of power devices of different technologies. Behavioral models of a Si diode and the SiC JFET are built by using the results of the above characterization methods, by which the evolution of the inter-electrode capacitances for different operating conditions are included in the models. Power diode models are validated with the measurements, in which the current is measured by a proposed current surface probe.
