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Characterization Of Laser Annealing Of Ion Implanted Gaas And Si Using Optical Reflectivity
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Book Synopsis Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity by : Bill W. Mullins (2LT, USAF.)
Download or read book Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity written by Bill W. Mullins (2LT, USAF.) and published by . This book was released on 1979 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity by : Bill W. Mullins
Download or read book Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity written by Bill W. Mullins and published by . This book was released on 1979 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Book Synopsis Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization by :
Download or read book Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Book Synopsis Characterization of Ion Implanted ZnSe/GaAs Upon Rapid Thermal Annealing by : Peter D. Lowen
Download or read book Characterization of Ion Implanted ZnSe/GaAs Upon Rapid Thermal Annealing written by Peter D. Lowen and published by . This book was released on 1991 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Implantation in Microelectronics by : A. H. Agajanian
Download or read book Ion Implantation in Microelectronics written by A. H. Agajanian and published by Springer. This book was released on 1981-09-30 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1979 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JJAP written by and published by . This book was released on 1987 with total page 1390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Journal of Current Laser Abstracts by :
Download or read book Journal of Current Laser Abstracts written by and published by . This book was released on 1984 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Japanese Journal of Applied Physics by :
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 1984 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 1396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1994-04 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Rapid Thermal Processing of Semiconductors by : Victor E. Borisenko
Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Book Synopsis Acoustic, Thermal Wave and Optical Characterization of Materials by : G.M. Crean
Download or read book Acoustic, Thermal Wave and Optical Characterization of Materials written by G.M. Crean and published by Elsevier. This book was released on 2014-08-04 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. This was the first time a symposium on this topic had been held, making the response particularly gratifying. The high quality of the contributions are a clear indication that non-destructive materials characterization is becoming a dynamic research area in Europe at the present time.A selection of contents: The role of acoustic properties in designs of acoustic and optical fibers (C.K. Jen). Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope (A. Quinten, W. Arnold). Mechanical characterization by acoustic techniques of SIC chemical vapour deposited thin films (J.M. Saurel et al.). Efficient generation of acoustic pressure waves by short laser pulses (S. Fassbender et al.). Use of scanning electron acoustic microscopy for the analysis of III-V compound devices (J.F. Bresse). Waves and vibrations in periodic piezoelectric composite materials (B.A. Auld). Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials (A. Vanelstraete, C. Laermans). Thermally induced concentration wave imaging (P. Korpiun et al.). Interferometric measurement of thermal expansion (V. Kurzmann et al.). Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Büchner et al.). Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et al.). Optical-thermal non-destructive examination of surface coatings (R.E. Imhof et al.). Bonding analysis of layered materials by photothermal radiometry (M. Heuret et al.). Thermal non-linearities of semiconductor-doped glasses in the near-IR region (M. Bertolotti et al.). Theory of picosecond transient reflectance measurement of thermal and eisatic properties of thin metal films (Z. Bozóki et al.). The theory and application of contactless microwave lifetime measurement (T. Otaredian et al.). Ballistic phonon signal for imaging crystal properties (R.P. Huebener et al.). Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Briliouin spectroscopy (F. Nizzoli et al.). Quantum interference effects in the optical second-harmonic response tensor of a metal surface (O. Keller). Study of bulk and surface phonons and plasmons in GaAs/A1As superlattices by far-IR and Raman spectroscopy (T. Dumslow et al.). Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates (T. Dumelow et al.). In-situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (O. Acher et al.). Optical evidence of precipitates in arsenic-implanted silicon (A. Borghesi et al.). Polarized IR reflectivity of CdGeAs2 (L. Artús et al.). Raman and IR spectroscopies: a useful combination to study semiconductor interfaces (D.R.T. Zahn et al.). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation (S. Zakang et al.). Ellipsometric characterization of thin films and superlattices (J. Bremer et al.). Ellipsometric characterization of multilayer transistor structures (J.A. Woollam et al.). Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry (U. Rossow et al.). An ellipsometric and RBS study of TiSi2 formation (J.M.M. de Nijs, A. van Silfhout). A new microscope for semiconductor luminescence studies (P.S. Aplin, J.C. Day). Structural analysis of optical fibre preforms fabricated by the sol-gel process (A.M. Elas et al.). Author index.
Book Synopsis Ion Implantation: Equipment and Techniques by : H. Ryssel
Download or read book Ion Implantation: Equipment and Techniques written by H. Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fourth International Conference on Ion Implantation: Equipment and Tech niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe cially effective in stimulating a free exchange of information was the daily get-together over free beer at the "Bier Adam". Many people contributed to the success of this conference.
Book Synopsis Growth of Crystals by : E.I. Givargizov
Download or read book Growth of Crystals written by E.I. Givargizov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, as the previous ones, consists primarily of review artic1es. However, it also contains a large quantity of original material on the growth of crystals and films. Priority is given to experimental work. Only two artic1es are concerned exc1usively with the theory of crystal growth. Theoretical aspects are treated in several others. This volume is divided into three parts. Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films). The first three artic1es of the book are devoted to this topic. In particular, the laser pulse vaporization method, for which a comparatively slow deposition rate is typical (which should not always be viewed as a drawback), is distinguished by the unique kinetics of the initial growth stages. These are not entirely explained. However, this method is completely suitable for oriented or generally ordered growth of films under otherwise equal conditions. Another artic1e of this section is based on use of ultrashort (down to picosecond) laser pulses. It emphasizes the nonequilibrium processes of crystallization and decrystallization that are characteristic for such influences. In particular, material heated above its melting point and metastable states in the semiconductor melt exhibit these qualities.
Book Synopsis Science and Technology of Defects in Silicon by : C.A.J. Ammerlaan
Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
