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Author : Mark Albert Armstrong
Publisher :
ISBN 13 :
Total Pages : 122 pages
Book Rating : 4.:/5 (298 download)
Download or read book Characterization of In-plane-gate Field Effect Transistors written by Mark Albert Armstrong and published by . This book was released on 1993 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Campbell Sinclair
Publisher :
ISBN 13 :
Total Pages : 121 pages
Book Rating : 4.:/5 (86 download)
Download or read book Characterization of the Junction Gate Field-effect Transistor written by John Campbell Sinclair and published by . This book was released on 1967 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ioannis Kymissis
Publisher : Springer Science & Business Media
ISBN 13 : 0387921346
Total Pages : 156 pages
Book Rating : 4.3/5 (879 download)
Download or read book Organic Field Effect Transistors written by Ioannis Kymissis and published by Springer Science & Business Media. This book was released on 2008-12-25 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Author : Ajit Heble
Publisher :
ISBN 13 :
Total Pages : 172 pages
Book Rating : 4.:/5 (182 download)
Download or read book Characterization of the Insulated-gate Field-effect Transistor as a Four-terminal Device written by Ajit Heble and published by . This book was released on 1971 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Muyu Yang
Publisher :
ISBN 13 :
Total Pages : 228 pages
Book Rating : 4.:/5 (126 download)
Download or read book Characterization of Gate-all-around Field Effect Transistors Based on BSIM-CMG Model written by Muyu Yang and published by . This book was released on 2018 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Paul Raymond De la Houssaye
Publisher :
ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.F/5 ( download)
Download or read book Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms written by Paul Raymond De la Houssaye and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Denis Marion Drury
Publisher :
ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (28 download)
Download or read book Large-signal Characterization of Dual-gate Field Effect Transistors Using Load-pull Measurements written by Denis Marion Drury and published by . This book was released on 1987 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hyunchang Park
Publisher :
ISBN 13 :
Total Pages : 198 pages
Book Rating : 4.E/5 ( download)
Download or read book Design, Fabrication, and Characterization of Modulation-doped Field-effect Transistors written by Hyunchang Park and published by . This book was released on 1989 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Byung-Eun Park
Publisher : Springer Nature
ISBN 13 : 9811512124
Total Pages : 421 pages
Book Rating : 4.8/5 (115 download)
Download or read book Ferroelectric-Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer Nature. This book was released on 2020-03-23 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Author : Mark Brown Barron
Publisher :
ISBN 13 :
Total Pages : 300 pages
Book Rating : 4.F/5 ( download)
Download or read book Computer Aided Analysis of Insulated Gate Field Effect Transistors written by Mark Brown Barron and published by . This book was released on 1969 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: The classical analysis of Insulated Gate Field-Effect Transistors (IGFET) is reviewed and the corresponding theory is compared with experimental characteristics. The limitations of this theory are indicated and the reasons for the limitations are explained in terms of the device physics. Two operating configurations which do not comply with the classical theory are subsequently analyzed with the aid of a digital computer; these are low-level current operation for gate voltages near threshold, and punch-through operation for short devices. The numerical data obtained from the low-level analysis is compared with experimental V-I characteristics, and it is shown that the device can be accurately modeled using the classical surface physics equations. Algebraic approximations, which offer certain advantages over numerical analysis, are shown to adequately describe transistor operation over certain current ranges. Derivations of the finite difference equations for numerical iterative analysis of the IGFET are described in detail. Certain stability problems are found to occur and methods for avoiding these are presented. Results of the analyses of short-channel devices are presented in the form of three-dimensional projections of the potential and carrier distributions. (Author).
Author : Louis Hélion Blair
Publisher :
ISBN 13 :
Total Pages : 68 pages
Book Rating : 4.:/5 (331 download)
Download or read book Device Characterization of a Field-effect Transistor written by Louis Hélion Blair and published by . This book was released on 1962 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Byung-Jong Moon
Publisher :
ISBN 13 :
Total Pages : 486 pages
Book Rating : 4.:/5 (319 download)
Download or read book Unified Field Effect Transistor Modeling and Characterization for Computer-aided Design written by Byung-Jong Moon and published by . This book was released on 1991 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Lin Gong
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (119 download)
Download or read book Fabrication and Characterization of Organic Field-Effect Transistors with Modified Gate Dielectrics and Application for Organic Nonvolatile Memory Cells written by Lin Gong and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zheng Xu
Publisher :
ISBN 13 :
Total Pages : 98 pages
Book Rating : 4.:/5 (115 download)
Download or read book Modeling and Characterization of Field Effect Transistors Based on Unified Charge Control Model written by Zheng Xu and published by . This book was released on 1998 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Young Hee Byun
Publisher :
ISBN 13 :
Total Pages : 608 pages
Book Rating : 4.:/5 (277 download)
Download or read book New Approach to Modeling and Characterization of Field Effect Transistors written by Young Hee Byun and published by . This book was released on 1991 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Aaen
Publisher : Cambridge University Press
ISBN 13 : 113946812X
Total Pages : 375 pages
Book Rating : 4.1/5 (394 download)
Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Author : Steven Baier
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (141 download)
Download or read book Electrical Characterization of Field-effect Transistors Using Gated TLM Structure written by Steven Baier and published by . This book was released on 1985 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
