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Download or read book Characterization of Electrically Active Defects in Advanced Gate Dielectrics written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Samares Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566775701
Total Pages : 676 pages
Book Rating : 4.5/5 (667 download)
Download or read book Physics and Technology of High-k Gate Dielectrics 5 written by Samares Kar and published by The Electrochemical Society. This book was released on 2007 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
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Author : Daniel Felnhofer
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (855 download)
Download or read book Characterization of Electronically Active Defects in Hafnium Dioxide High-[kappa] Gate Dielectrics written by Daniel Felnhofer and published by . This book was released on 2006 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Evgeni Gusev
Publisher : Springer Science & Business Media
ISBN 13 : 9781402043659
Total Pages : 516 pages
Book Rating : 4.0/5 (436 download)
Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Author : Ram Ekwal Sah
Publisher : The Electrochemical Society
ISBN 13 : 1566775523
Total Pages : 863 pages
Book Rating : 4.5/5 (667 download)
Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 9 written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2007 with total page 863 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Author : S. Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566776511
Total Pages : 550 pages
Book Rating : 4.5/5 (667 download)
Download or read book Physics and Technology of High-k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author : Kevin J. Yang
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.:/5 (34 download)
Download or read book Characterization and Modeling of Advanced Gate Dielectrics written by Kevin J. Yang and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michel Houssa
Publisher : CRC Press
ISBN 13 : 1000687244
Total Pages : 460 pages
Book Rating : 4.0/5 (6 download)
Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author :
Publisher : Elsevier
ISBN 13 : 1782422250
Total Pages : 274 pages
Book Rating : 4.7/5 (824 download)
Download or read book Reliability Characterisation of Electrical and Electronic Systems written by and published by Elsevier. This book was released on 2014-12-24 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book takes a holistic approach to reliability engineering for electrical and electronic systems by looking at the failure mechanisms, testing methods, failure analysis, characterisation techniques and prediction models that can be used to increase reliability for a range of devices. The text describes the reliability behavior of electrical and electronic systems. It takes an empirical scientific approach to reliability engineering to facilitate a greater understanding of operating conditions, failure mechanisms and the need for testing for a more realistic characterisation. After introducing the fundamentals and background to reliability theory, the text moves on to describe the methods of reliability analysis and charactersation across a wide range of applications. Takes a holistic approach to reliability engineering Looks at the failure mechanisms, testing methods, failure analysis, characterisation techniques and prediction models that can be used to increase reliability Facilitates a greater understanding of operating conditions, failure mechanisms and the need for testing for a more realistic characterisation
Author : David G. Seiler
Publisher : American Institute of Physics
ISBN 13 :
Total Pages : 868 pages
Book Rating : 4.3/5 (91 download)
Download or read book Characterization and Metrology for ULSI Technology: 2003 written by David G. Seiler and published by American Institute of Physics. This book was released on 2003-10-08 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt: The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Topics include: integrated circuit history, challenges and overviews, front end, lithography, interconnect and back end, and critical analytical techniques. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The editors believe that this book of collected papers provides a concise and effective portrayal of industry characterization needs and the way they are being addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. Hopefully, it will also provide a basis for stimulating advances in metrology and new ideas for research and development.
Author : Samares Kar
Publisher : Springer Science & Business Media
ISBN 13 : 3642365353
Total Pages : 515 pages
Book Rating : 4.6/5 (423 download)
Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Author : W. Murray Bullis
Publisher :
ISBN 13 :
Total Pages : 716 pages
Book Rating : 4.:/5 (44 download)
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yi Ming Ding
Publisher :
ISBN 13 :
Total Pages : 147 pages
Book Rating : 4.:/5 (116 download)
Download or read book Electrical Characterization of High-k Gate Dielectrics for Advanced CMOS Gate Stacks written by Yi Ming Ding and published by . This book was released on 2016 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: To further evaluate the high-k dielectrics and how EOT impacts on noise mechanism time zero 1/f noise is characterized on thick and thin oxide FinFET transistors, respectively. The extracted noise models suggest that as a function of temperatures and bias conditions the flicker noise mechanism tends to be carrier number fluctuation model (McWhorter model). Furthermore, the noise mechanism tends to be mobility fluctuation model (Hooge model) when EOT reduces.
Author : Daniel M. Fleetwood
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author : Athanasios Dimoulas
Publisher : Springer Science & Business Media
ISBN 13 : 354071491X
Total Pages : 397 pages
Book Rating : 4.5/5 (47 download)
Download or read book Advanced Gate Stacks for High-Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Author : Weiming He
Publisher :
ISBN 13 :
Total Pages : 200 pages
Book Rating : 4.:/5 (576 download)
Download or read book Electrical Characterization of High-k Gate Dielectrics for High Frequency Application written by Weiming He and published by . This book was released on 2004 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Samares Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566775035
Total Pages : 565 pages
Book Rating : 4.5/5 (667 download)
Download or read book Physics and Technology of High-k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
