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Author : Tzuen Shyan Lin
Publisher :
ISBN 13 :
Total Pages : 278 pages
Book Rating : 4.:/5 (869 download)
Download or read book Characterization of Anodic Grown Oxide on Gallium Arsenide written by Tzuen Shyan Lin and published by . This book was released on 1982 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christopher Bruce Mills
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (86 download)
Download or read book On the Growth and Characterization of Metal Oxide Semiconductor Structures on Gallium Arsenide written by Christopher Bruce Mills and published by . This book was released on 1985 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gordon J. Kuhlmann
Publisher :
ISBN 13 :
Total Pages : 88 pages
Book Rating : 4.:/5 (31 download)
Download or read book A Study to Investigate the Chemical Stability of Gallium Phosphate Oxide/gallium Arsenide Phosphide written by Gordon J. Kuhlmann and published by . This book was released on 1979 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author : Martin John Biancalana (CAPT, USAF.)
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (132 download)
Download or read book Electrical Characterization of GaAs Anodic Oxides Using Isothermal Dielectric Relaxation Current written by Martin John Biancalana (CAPT, USAF.) and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Devendra K. Sadana
Publisher :
ISBN 13 :
Total Pages : 164 pages
Book Rating : 4.:/5 (318 download)
Download or read book Advanced Semiconductor Processing and Characterization of Electronic and Optical Materials written by Devendra K. Sadana and published by . This book was released on 1984 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1460 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author :
Publisher :
ISBN 13 :
Total Pages : 7 pages
Book Rating : 4.:/5 (727 download)
Download or read book Characteristics of Oxide Layer Grown on Gallium Arsenide Using 2. 8 EV Translational Energy Atomic Oxygen written by and published by . This book was released on 1990 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thick (>200 Å), uniform, oxide layers have been produced on GaAs (110) and (100) by reacting the substrate (T{sub s}
Author : Sadao Adachi
Publisher : IET
ISBN 13 : 9780852965580
Total Pages : 354 pages
Book Rating : 4.9/5 (655 download)
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Author : Richard Alan Stall
Publisher :
ISBN 13 :
Total Pages : 384 pages
Book Rating : 4.E/5 ( download)
Download or read book Growth, Characterization, and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy written by Richard Alan Stall and published by . This book was released on 1980 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dennis Meyer
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (218 download)
Download or read book Chemical and Electrical Characteristics of an Anodically Grown Native Oxide of GaAs written by Dennis Meyer and published by . This book was released on 1977 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jung-Il Lee
Publisher :
ISBN 13 :
Total Pages : 318 pages
Book Rating : 4.:/5 (176 download)
Download or read book Magnetoadmittance Measurements on Gallium-arsenide/aluminum-galium-arsenide Heterostructures and Growth and Characterization of Native Oxide on Germanium and Gallium-arasenide written by Jung-Il Lee and published by . This book was released on 1986 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 郭廷晃
Publisher :
ISBN 13 :
Total Pages : 94 pages
Book Rating : 4.:/5 (795 download)
Download or read book Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition written by 郭廷晃 and published by . This book was released on 2008 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : INSPEC
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerald Lucovsky
Publisher : Elsevier
ISBN 13 : 1483162443
Total Pages : 382 pages
Book Rating : 4.4/5 (831 download)
Download or read book The Physics of MOS Insulators written by Gerald Lucovsky and published by Elsevier. This book was released on 2013-10-22 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physics of MOS Insulators focuses on the experiments, research, and discussions made on MOS insulators. Divided into eight parts and having 72 chapters, the selection features the lengthy literature of contributors in the field of biochemistry who have continuously worked to highlight the structure, properties, applications, processes, experiments, and research done on MOS insulators. Scattered within the numerous chapters of the selection are experiments that are supported by lengthy discussions and data necessary to validate the claims of the authors. Although the chapters cover different topics, generally, they present how MOS insulators have captured the interest of biochemists and other individuals who are interested in this discipline. The papers generally include samples and measurements, observations, discussions, numerical representations, methodologies, conclusions, and recommendations. This book is a dependable source of information for those who are keen enough to study the physics of MOS insulators. This text is highly recommended to biochemists, students, and scholars who find this area of study interesting.
Author :
Publisher :
ISBN 13 :
Total Pages : 834 pages
Book Rating : 4.:/5 (334 download)
Download or read book Research in Progress written by and published by . This book was released on 1978 with total page 834 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Leonard C. Feldman
Publisher : Academic Press
ISBN 13 : 0323139817
Total Pages : 321 pages
Book Rating : 4.3/5 (231 download)
Download or read book Materials Analysis by Ion Channeling written by Leonard C. Feldman and published by Academic Press. This book was released on 2012-12-02 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with an indication of the origin of the ideas within fundamental channeling theory. The level of the book is appropriate to senior under-graduates and graduate students who have had a modern physics course work in related areas of materials science and wish to learn more about the "channeling" probe, its strengths, weaknesses, and areas of further potential application. To them we hope we have explained this apparent paradox of using mega-electron volt ions to probe solid state phenomena that have characteristic energies of electron volts.
