Characterization, Modeling and Fabrication of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors

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Total Pages : 304 pages
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Book Synopsis Characterization, Modeling and Fabrication of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors by : Melih Özaydin

Download or read book Characterization, Modeling and Fabrication of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors written by Melih Özaydin and published by . This book was released on 1995 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 144 pages
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Book Synopsis Fabrication and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors by : Amish J. Shah

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Fabrication and DC and Microwave Characterization of Aluminum Gallium Arsenide/gallium Arsenide and Indium Aluminum Arsenide/indium Gallium Arsenide Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 466 pages
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Book Synopsis Fabrication and DC and Microwave Characterization of Aluminum Gallium Arsenide/gallium Arsenide and Indium Aluminum Arsenide/indium Gallium Arsenide Heterojunction Bipolar Transistors by : Saied Tadayon

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The Design, Fabrication, and Characterization of High-performance Self-aligned Gallium Arsenide/aluminum Gallium Arsenide and Gallium Arsenide/gallium Indium Arsenide/aluminum Gallium Arsenide Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 474 pages
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Book Synopsis The Design, Fabrication, and Characterization of High-performance Self-aligned Gallium Arsenide/aluminum Gallium Arsenide and Gallium Arsenide/gallium Indium Arsenide/aluminum Gallium Arsenide Heterojunction Bipolar Transistors by : Dean Winston Barker

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The Growth and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistor Structures by Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 370 pages
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Book Synopsis The Growth and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistor Structures by Molecular Beam Epitaxy by : Paul Michael Enquist

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Fabrication of Aluminum Gallium Arsenide

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ISBN 13 :
Total Pages : 264 pages
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Book Synopsis Fabrication of Aluminum Gallium Arsenide by : Melih Özaydin

Download or read book Fabrication of Aluminum Gallium Arsenide written by Melih Özaydin and published by . This book was released on 1991 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design, Fabrication, and Analysis of a Gallium Arsenide Heterojunction Bipolar Transistor

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ISBN 13 :
Total Pages : 136 pages
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Book Synopsis Design, Fabrication, and Analysis of a Gallium Arsenide Heterojunction Bipolar Transistor by : Edward David Goff

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Computer-aided Design and Processing of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors to Study Emitter-size Effects

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ISBN 13 :
Total Pages : 486 pages
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Book Synopsis Computer-aided Design and Processing of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors to Study Emitter-size Effects by : Lynnita Kaye Knoch

Download or read book Computer-aided Design and Processing of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors to Study Emitter-size Effects written by Lynnita Kaye Knoch and published by . This book was released on 1989 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Parameter Extraction of Aluminum Gallium Arsenide - Gallium Arsenide Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 374 pages
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Book Synopsis Parameter Extraction of Aluminum Gallium Arsenide - Gallium Arsenide Heterojunction Bipolar Transistors by : Seonghearn Lee

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The Fabrication of Double Heterojunction Aluminum Gallium Arsenide/gallium Arsenide Bipolar Transistors by Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 90 pages
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Book Synopsis The Fabrication of Double Heterojunction Aluminum Gallium Arsenide/gallium Arsenide Bipolar Transistors by Molecular Beam Epitaxy by : Shun-Lin Su

Download or read book The Fabrication of Double Heterojunction Aluminum Gallium Arsenide/gallium Arsenide Bipolar Transistors by Molecular Beam Epitaxy written by Shun-Lin Su and published by . This book was released on 1983 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors

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ISBN 13 :
Total Pages : 562 pages
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Book Synopsis Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors by : Shahzad Akbar

Download or read book Materials and Device Characterization of Indium Gallium Arsenide Pseudomorphic Base Heterojunction Bipolar Transistors written by Shahzad Akbar and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Arsenide Digital Circuits

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Publisher : Springer Science & Business Media
ISBN 13 : 9780792390817
Total Pages : 214 pages
Book Rating : 4.3/5 (98 download)

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Book Synopsis Gallium Arsenide Digital Circuits by : Omar Wing

Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 1990-10-31 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.

Analysis & Modelling of Gallium Arsenide Heterojunction Bipolar Transistor Mixers

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Total Pages : pages
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Book Synopsis Analysis & Modelling of Gallium Arsenide Heterojunction Bipolar Transistor Mixers by : Bernard Anthony Xavier

Download or read book Analysis & Modelling of Gallium Arsenide Heterojunction Bipolar Transistor Mixers written by Bernard Anthony Xavier and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Masters Theses in the Pure and Applied Sciences

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Publisher : Springer Science & Business Media
ISBN 13 : 1461528321
Total Pages : 350 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Masters Theses in the Pure and Applied Sciences by : Wade H. Shafer

Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 36 (thesis year 1991) a total of 11,024 thesis titles from 23 Canadian and 161 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 36 reports theses submitted in 1991, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.

Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications

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ISBN 13 :
Total Pages : 468 pages
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Book Synopsis Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications by : Allen Nicholas Lepore

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Fabrication of Atomic Planar Doped Doubled Heterojunction Aluminum Gallium Arsenide/gallium Arsenide/aluminum Gallium Arsenide MODFET's for High Power Broadband Distributed Amplifiers

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ISBN 13 :
Total Pages : 232 pages
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Book Synopsis Fabrication of Atomic Planar Doped Doubled Heterojunction Aluminum Gallium Arsenide/gallium Arsenide/aluminum Gallium Arsenide MODFET's for High Power Broadband Distributed Amplifiers by : Carl White

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DESIGN OF GALLIUM ARSENIDE- AND INDIUM PHOSPHIDE-BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED PERFORMANCE (GALLIUM ARSENIDE, INDIUM PHOSPHIDE).

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ISBN 13 :
Total Pages : 474 pages
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Book Synopsis DESIGN OF GALLIUM ARSENIDE- AND INDIUM PHOSPHIDE-BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED PERFORMANCE (GALLIUM ARSENIDE, INDIUM PHOSPHIDE). by : JUNTAO HU

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