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Author : Kevin J. Yang
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.:/5 (34 download)
Download or read book Characterization and Modeling of Advanced Gate Dielectrics written by Kevin J. Yang and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yi Ming Ding
Publisher :
ISBN 13 :
Total Pages : 147 pages
Book Rating : 4.:/5 (116 download)
Download or read book Electrical Characterization of High-k Gate Dielectrics for Advanced CMOS Gate Stacks written by Yi Ming Ding and published by . This book was released on 2016 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: To further evaluate the high-k dielectrics and how EOT impacts on noise mechanism time zero 1/f noise is characterized on thick and thin oxide FinFET transistors, respectively. The extracted noise models suggest that as a function of temperatures and bias conditions the flicker noise mechanism tends to be carrier number fluctuation model (McWhorter model). Furthermore, the noise mechanism tends to be mobility fluctuation model (Hooge model) when EOT reduces.
Author : Mikhail Baklanov
Publisher : John Wiley & Sons
ISBN 13 : 0470065419
Total Pages : 508 pages
Book Rating : 4.4/5 (7 download)
Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Download or read book Characterization of Electrically Active Defects in Advanced Gate Dielectrics written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 江振國
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (83 download)
Download or read book Fabrication and Characterization of High-k Gate Dielectrics Using Atomic Layer Deposition for Advanced CMOS Technology written by 江振國 and published by . This book was released on 2012 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Byoung Woon Min
Publisher :
ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (423 download)
Download or read book Reliability characterization of advanced oxynitride gate dielectrics for ULSI MOSFET application written by Byoung Woon Min and published by . This book was released on 1998 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : National Research Council
Publisher : National Academies Press
ISBN 13 : 0309085268
Total Pages : 364 pages
Book Rating : 4.3/5 (9 download)
Download or read book An Assessment of the National Institute of Standards and Technology Measurement and Standards Laboratories written by National Research Council and published by National Academies Press. This book was released on 2002-10-26 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: This assessment of the technical quality and relevance of the programs of the Measurement and Standards Laboratories of the National Institute of Standards and Technology is the work of the 165 members of the National Research Council's (NRC's) Board on Assessment of NIST Programs and its panels. These individuals were chosen by the NRC for their technical expertise, their practical experience in running research programs, and their knowledge of industry's needs in basic measurements and standards. This assessment addresses the following: The technical merit of the laboratory programs relative to the state of the art worldwide; The effectiveness with which the laboratory programs are carried out and the results disseminated to their customers; The relevance of the laboratory programs to the needs of their customers; and The ability of the laboratories' facilities, equipment, and human resources to enable the laboratories to fulfill their mission and meet their customers' needs.
Author : Xiaochen Zhang
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (856 download)
Download or read book Characterization and Modeling of Low Frequency Noise and Dielectric Traps in Scaled MOSFET Devices written by Xiaochen Zhang and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization on SiON MOSFET devices are performed including I-V (Current-Voltage), C-V (Capacitance-Voltage), charge pumping etc. NMOS transistors exhibit a higher interface trap density (9.7E10 cm-2eV-1) than PMOS (5.8E10 cm-2eV-1). The mean capture cross sections are comparable in these devices: 3.3E-17 cm2 and 9.1E-17 cm2, receptively, for CMOS devices. Different mobility extraction methods are presented and the results indicate strong surface roughness scattering in these devices. The effects of channel carbon ion implantation (Cii) on advanced high-K metal gate low-power CMOS devices have been studies. Cii improves the device performance, especially for NMOS. The improvement comes mainly from an improvement in electron mobility, where Coulomb scattering is reduced due to retarded boron diffusion with carbon.
Author : Dinesh C. Gupta
Publisher : ASTM International
ISBN 13 : 0803126158
Total Pages : 172 pages
Book Rating : 4.8/5 (31 download)
Download or read book Gate Dielectric Integrity written by Dinesh C. Gupta and published by ASTM International. This book was released on 2000 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.
Author : Michel Houssa
Publisher : CRC Press
ISBN 13 : 1000687244
Total Pages : 460 pages
Book Rating : 4.0/5 (6 download)
Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
Author : Guntrade Roll
Publisher : Logos Verlag Berlin GmbH
ISBN 13 : 3832532617
Total Pages : 240 pages
Book Rating : 4.8/5 (325 download)
Download or read book Leakage Current and Defect Characterization of Short Channel MOSFETs written by Guntrade Roll and published by Logos Verlag Berlin GmbH. This book was released on 2012 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.
Author : Markangelo S. D'Souza
Publisher :
ISBN 13 :
Total Pages : 138 pages
Book Rating : 4.:/5 (269 download)
Download or read book Characterization and Modeling of Defects Within Intermetal Dielectrics written by Markangelo S. D'Souza and published by . This book was released on 1992 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Shubham Tayal
Publisher : CRC Press
ISBN 13 : 1000438783
Total Pages : 176 pages
Book Rating : 4.0/5 (4 download)
Download or read book High-k Materials in Multi-Gate FET Devices written by Shubham Tayal and published by CRC Press. This book was released on 2021-09-16 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.
Author : Samares Kar
Publisher : Springer Science & Business Media
ISBN 13 : 3642365353
Total Pages : 515 pages
Book Rating : 4.6/5 (423 download)
Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .
Author : S. Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566776511
Total Pages : 550 pages
Book Rating : 4.5/5 (667 download)
Download or read book Physics and Technology of High-k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Author :
Publisher :
ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.3/5 (91 download)
Download or read book NISTIR. written by and published by . This book was released on 2001 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Daniel M. Fleetwood
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)
Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
