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Cathodoluminescence On The Effects Of Te Implantation And Laser Annealing In Gallium Arsenide
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Book Synopsis Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide by : Ronald L. Lusk (CAPT, USAF.)
Download or read book Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide written by Ronald L. Lusk (CAPT, USAF.) and published by . This book was released on 1978 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide by : Ronald L. Lusk
Download or read book Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide written by Ronald L. Lusk and published by . This book was released on 1978 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: The United States Air Force uses devices which must operate in high temperature environments where intrinsic (pure) semiconductors do not perform well. With the intentional addition of impurity ions (doping) into the lattice of a crystal, the semiconductor gallium arsenide (GaAs) should have the electrical properties required for operation in the environments mentioned above. Gallium arsenide is an intermetallic compound formed from a group III element (gallium) and a group V element (arsenic). It crystallizes in the zinc blende structure and has physical properties which are similar to those of the covalent group IV semiconductors, germanium and silicon. The electrical properties, such as high electron mobility, have made GaAs very useful in many technical applications. However, the promise that GaAs shows for use in future devices, such as microwave devices, is based upon the ability to provide the necessary impurity concentrations in the 'pure' crystal.
Book Synopsis Cathodoluminescence of Germanium Implanted Gallium Arsenide and the Effects of Laser Annealing by : James H. Walcher (CAPT, USAF.)
Download or read book Cathodoluminescence of Germanium Implanted Gallium Arsenide and the Effects of Laser Annealing written by James H. Walcher (CAPT, USAF.) and published by . This book was released on 1978 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Cathodoluminescence of Germanium Implanted Gallium Arsenide and the Effects of Laser Annealing by : James H. Walcher
Download or read book Cathodoluminescence of Germanium Implanted Gallium Arsenide and the Effects of Laser Annealing written by James H. Walcher and published by . This book was released on 1978 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary objective of this study was to characterize experimental laser annealed samples using cathodoluminescence. Ten Cr-doped (SI) GaAs samples were studied. These samples included an unimplanted-unannealed sample, several unimplanted but laser annealed samples, Ge implanted thermally annealed and laser annealed samples, and a Ge implanted unannealed sample. The results indicated the experimental laser annealed samples to be partially or completely unannealed. The laser annealed samples were generally characterized by weak luminescence with peaks at 1.514 eV due to unresolved excitons, 1.488 eV attributed to ZnAs, and 1.469 eV (damage related). It was further observed that in the thermally annealed samples, the dominat peak was noted at 1.488 eV instead of the expected 1.478 eV peak previously associated with Ge. Finally, the unannealed sample spectra emissions were characterized by a 1.493 eV peak attributed to CAs, and in all non-laser annealed samples a 1.36 eV peak attributed to CuGa was observed.
Book Synopsis Depth-resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide by : Joseph Danny Dumoulin (MAJ, USAF.)
Download or read book Depth-resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide written by Joseph Danny Dumoulin (MAJ, USAF.) and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-Resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide by : Joseph D. Dumoulin
Download or read book Depth-Resolved Cathodoluminescence on the Effects of Cd Implantation and Annealing in Gallium Arsenide written by Joseph D. Dumoulin and published by . This book was released on 1976 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ten samples of GaAs were examined by depth-resolved cathodoluminescence at temperatures of 10 K and 80 K. Electron beam energies from 1.0KV to 25KV were used. Both cold and hot, 135KV, Cd-implanted GaAs samples with Si3N4 caps were studied. A sample of the n-type GaAs substrate was used as a control. Spectra were obtaining showing the ion implantation damage layers. The unannealed samples damage layer boundaries were calculated at 0.01 micrometers, 0.24 micrometers, 0.37 micrometers, and 0.61 micrometers for fluences of 10 to the 12th power ion/sq cm, 10 to the 14th power ion/sqcm, 10 to the 15th power ion/sqcm, and 10 to the 16th power ion/sqcm respectively. For fluences> or = 10 to the 14th power ion/sq cm and 800 C, 15 minute anneal in flowing argon gas was not sufficient to completely remove the damage layer. An emission peak at 1.488eV changed in energy by only 0.001 eV between 10 K and 80 K, and was assigned to a donor-Cd acceptor recombination. A peak approximately 0.010eV above the band gap energy was observed in many of the implanted samples. Peaks at 1.4eV, 1.41eV, 1.39eV, and 1.35eV increased in intensity upon annealing and were assigned to vacancies, which were enhanced during annealing. The major conclusion reached was that depth-resolved cathodoluminescence was an excellent non-destructive method of sharply defining damage layers produced by ion implantation. (Author).
Book Synopsis Laser Annealing of Ion Implanted Gallium Arsenide by : Robert S. Mason
Download or read book Laser Annealing of Ion Implanted Gallium Arsenide written by Robert S. Mason and published by . This book was released on 1978 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the material's condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. (Author).
Book Synopsis Laser Annealing of Donor Implanted Gallium Arsenide by : J. A. Akintunde
Download or read book Laser Annealing of Donor Implanted Gallium Arsenide written by J. A. Akintunde and published by . This book was released on 1981 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-Resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide by : Jeffrey Ray Cavins
Download or read book Depth-Resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide written by Jeffrey Ray Cavins and published by . This book was released on 1982 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth-resolved cathodoluminescence was performed on Si ion implanted GaAs. The samples were Cr doped semi-insulating GaAs crystals grown using the horizontal Bridgman method. Nine samples were prepared for this study, four were implanted with 100 keV Si ions at a fluence of 10 to the 13th power/sq. cm, and five were left unimplanted. One each of the implanted and unimplanted samples were annealed at 800 C for 10 minutes, 800 C for 10 seconds, 900 C for 10 minutes, or 900 C for 10 seconds, for a total of eight samples. The ninth sample was left unannealed and unimplanted as a control. Cathodoluminescence data was taken using 1000 V electrons as an excitation source. Depth resolution was achieved by taking spectral data and successively chemically etching the surface of the crystal in 250 A steps. No new peaks were observed in the GaAs during the experiment. The 800 C/10 minute anneal proved to have the greatest effect in optically activating the impurities in the unimplanted samples. The 900 C/10 minute anneals exhibited spectra associated with vacancy complexes.
Book Synopsis Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide by : Samuel C. Ling
Download or read book Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide written by Samuel C. Ling and published by . This book was released on 1982 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).
Book Synopsis Laser Annealing of Ion Implanted Gallium Arsenide by : Robert S. Mason (2LT, USAF.)
Download or read book Laser Annealing of Ion Implanted Gallium Arsenide written by Robert S. Mason (2LT, USAF.) and published by . This book was released on 1978 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Depth-resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide by : Jeffrey Ray Cavins (CAPT, USAF.)
Download or read book Depth-resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide written by Jeffrey Ray Cavins (CAPT, USAF.) and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Experimental Study of Capless Annealing of Ion Implanted Gallium-arsenide by : Gary Lynn Harris
Download or read book An Experimental Study of Capless Annealing of Ion Implanted Gallium-arsenide written by Gary Lynn Harris and published by . This book was released on 1980 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Annealing and Solid Phase Epitaxy of Ion-implanted Gallium Arsenide by Rapid Thermal Processing by : Walter George Opyd
Download or read book The Annealing and Solid Phase Epitaxy of Ion-implanted Gallium Arsenide by Rapid Thermal Processing written by Walter George Opyd and published by . This book was released on 1989 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Implantation and Annealing of Sulfur in Gallium Arsenide by : Elie S. Ammar
Download or read book Implantation and Annealing of Sulfur in Gallium Arsenide written by Elie S. Ammar and published by . This book was released on 1977 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis CW Laser Annealing and CW Laser Assisted Diffusion in Gallium Arsenide by : Yves Isaac Nissim
Download or read book CW Laser Annealing and CW Laser Assisted Diffusion in Gallium Arsenide written by Yves Isaac Nissim and published by . This book was released on 1981 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide by : Mark R. Wilson
Download or read book Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide written by Mark R. Wilson and published by . This book was released on 1986 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
