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Carrier Concentration Profiling In Ion Implanted Gallium Arsenide Through A Modified Electrochemical Technique
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Book Synopsis Carrier Concentration Profiling in Ion-implanted Gallium Arsenide Through a Modified Electrochemical Technique by : T. Ambridge
Download or read book Carrier Concentration Profiling in Ion-implanted Gallium Arsenide Through a Modified Electrochemical Technique written by T. Ambridge and published by . This book was released on 1977 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Improvements to the Electrochemical Technique for Accurate Carrier Concentration Profiling in Gallium Arsenide by : T. Ambridge
Download or read book Improvements to the Electrochemical Technique for Accurate Carrier Concentration Profiling in Gallium Arsenide written by T. Ambridge and published by . This book was released on 1977 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1978 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Implantation in Microelectronics by : A. H. Agajanian
Download or read book Ion Implantation in Microelectronics written by A. H. Agajanian and published by Springer. This book was released on 1981-09-30 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
Book Synopsis Chemical Methods to Modify Defect Populations in Gallium Arsenide by : Robert Clair Keller
Download or read book Chemical Methods to Modify Defect Populations in Gallium Arsenide written by Robert Clair Keller and published by . This book was released on 1993 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effects of Ion-implanted Gallium, Arsenic, and Phosphorus on the Diffusion of Ion-implanted Zinc in Gallium Arsenide Phosphide by : Edward Bryant Stoneham
Download or read book The Effects of Ion-implanted Gallium, Arsenic, and Phosphorus on the Diffusion of Ion-implanted Zinc in Gallium Arsenide Phosphide written by Edward Bryant Stoneham and published by . This book was released on 1975 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effects of Ion Implanted Gallium, Arsenic and Phosphorus on the Diffusion of Ion Implanted Zinc in Gallium Arsenide Phosphide by : Stanford University. Stanford Electronics Laboratories
Download or read book Effects of Ion Implanted Gallium, Arsenic and Phosphorus on the Diffusion of Ion Implanted Zinc in Gallium Arsenide Phosphide written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1975 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contact to Ion Implanted Gallium Arsenide Antimonide for Application to Indium Aluminum Arsenide/Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors by :
Download or read book Ohmic Contact to Ion Implanted Gallium Arsenide Antimonide for Application to Indium Aluminum Arsenide/Gallium Arsenide Antimonide Heterostructure Insulated-Gate Field Effect Transistors written by and published by . This book was released on 1995 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: The p-channel In(0.52)Al(0.48)As/GaAs(1-x)Sb(x) heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In(0.52)Al(0.48)As/GaAs(1-x)Sb(x) p-HIGFET requires improved source/drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In(0.52)Al(0.48)As/GaAs(0.51)Sb(0.49) HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped GaAs(0.51)Sb(0.49). Third, high acceptor concentrations were obtained on GaAs(1-x)Sb(x) using beryllium ion implantation. Fourth, Au/Zn/Au and Ti/Pt/Au were compared as ohmic contact metallizations to these highly doped layers. Finally, In(0.52)Al(0.48)As/GaAs(0.51)Sb(0.49) HIGFETs were fabricated and characterized using Ti/Pt/Au metallization and Be implantation. An array of characterization methods were employed to thoroughly characterize materials and devices including: transmission line measurements (TLM), electrochemical profiling, photoluminescence (PL), atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), cross-sectional transmission electron microscopy (XTEM), selected area diffraction (SAD) and energy dispersive X-ray analysis (EDX). jg p.25.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book INIS Atomindex written by and published by . This book was released on 1986 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis System OptimizatIon of the Glow Discharge Optical Spectroscopy Technique Used for Impurity Profiling of ION Implanted Gallium Arsenide by : Paul J. Apuzzo
Download or read book System OptimizatIon of the Glow Discharge Optical Spectroscopy Technique Used for Impurity Profiling of ION Implanted Gallium Arsenide written by Paul J. Apuzzo and published by . This book was released on 1980 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt: The glow discharge optical spectroscopy (GDOS) technique was investigated to determine if the sensitivity of the system could be improved. GDOS was applied to determine impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Modifications were made to the sputtering chamber and the light collection systems which resulted in a 3.7 times increase in system sensitivity. Comparisons were made to previous studies by sputtering GaAs samples implanted with Ge at energies of 90 keV and 120 keV and fluences of 5 x 10 to the 14th power/sq cm and 10 to the 15th power/sq cm. The implanted samples were sputtered in a low pressure argon gas discharge. Intensity of a strong emission line, characteristic of the implanted impurity, was monitored as a function of time. Profiles of Ge implanted GaAs were measured and analyzed. (Author).
Book Synopsis High Energy and High Dose Ion Implantation by : S.U. Campisano
Download or read book High Energy and High Dose Ion Implantation written by S.U. Campisano and published by Elsevier. This book was released on 1992-06-16 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.
Book Synopsis Ion-solid Interactions by : Walter M. Gibson
Download or read book Ion-solid Interactions written by Walter M. Gibson and published by . This book was released on 1980 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Behavior of Ge and (Ge+As) Implanted Gallium Arsenide by : Bryan L. Kelchner
Download or read book Electrical Behavior of Ge and (Ge+As) Implanted Gallium Arsenide written by Bryan L. Kelchner and published by . This book was released on 1986 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: The amphoteric electrical properties of single implants of Ge and dual implants of Ge and As into semi-insulating Cr-doped GaAs have been studied using the Hall-effect/sheet-resistivity measurement method. Room temperature implantation was performed at an ion energy of 120 keV with a dose ranging from 5 x 10 to the 12th power to 3 x 10 to the 15th power per sq cm. The implanted samples were annealed at 900 C for 15 minutes. The results of carrier profile measurements show the amphoteric behavior of Ge, and the Ga-site occupancy by the Ge ions are signficantly enhanced by the addition of As ions. In general, the carrier depth profiles show relatively flat but considerably fluctuating distributions. Capacitance-voltage (C-V) measurements were also made on some samples with low enough carrier concentrations, and the Hall profiles corrected for surface depletion widths were compared with the C-V profiles. SIMS atomic distributions of Ge have also been measured, the the results show that the Ge atomic profiles of the as-implanted samples do not follow the LSS Guassian distribution. The SIMS profile for annealed samples show very little redistribution of the Ge ions. A comparison of the Hall and SIMS data shows that carrier concentrations are much less than the number of Ge ions in most of the implanted region. This is probably due to the unannealed implantation damage and/or electrical self-compensation. (Author).
Book Synopsis Proceedings of the Fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity by : Cor L. Claeys
Download or read book Proceedings of the Fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1997 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Spreading Resistance Profiles in Gallium Arsenide by : RG. Mazur
Download or read book Spreading Resistance Profiles in Gallium Arsenide written by RG. Mazur and published by . This book was released on 1989 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: The spreading resistance technique is widely used for profiling carrier concentration and resistivity in a variety of silicon structures. Several authors have reported some success in applying the spreading resistance technique to profiling doped GaAs samples. However, the use of spreading resistance measurements on GaAs is not widespread. The primary reasons for this are experimental problems with sample surface preparation and the very high values of contact resistance found in point contacts to GaAs. This paper details modifications to the spreading resistance technique to obtain reproducible and stable results on a variety of GaAs structures. It also discusses the current limits of such measurements.
Download or read book JJAP written by and published by . This book was released on 1995 with total page 1204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
