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Author : Russell C. Gee
Publisher :
ISBN 13 :
Total Pages : 270 pages
Book Rating : 4.:/5 (318 download)
Download or read book Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications written by Russell C. Gee and published by . This book was released on 1993 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sunil Thomas
Publisher :
ISBN 13 :
Total Pages : 174 pages
Book Rating : 4.:/5 (45 download)
Download or read book Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy written by Sunil Thomas and published by . This book was released on 1998 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor deposition system will be demonstrated. Excellent large and small area DC and RF results are obtained for single and double heterojunction structures. The large area DC current gain was increased by a factor of 3 at a given base sheet resistance via growth optimization. DHBT devices exhibit a current gain cut-off frequency of ft ~ 125 GHz and a unilateral gain cut-off frequency of fmax ~ 125 GHz.
Author : M. F. Chang
Publisher : World Scientific
ISBN 13 : 9789810220976
Total Pages : 448 pages
Book Rating : 4.2/5 (29 download)
Download or read book Current Trends in Heterojunction Bipolar Transistors written by M. F. Chang and published by World Scientific. This book was released on 1996 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author : John Charles Cowles (Jr.)
Publisher :
ISBN 13 :
Total Pages : 322 pages
Book Rating : 4.3/5 (91 download)
Download or read book InP-based Heterojunction Bipolar Transistor Technology for High Speed Devices and Circuits written by John Charles Cowles (Jr.) and published by . This book was released on 1994 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stephen Andrew Stockman
Publisher :
ISBN 13 :
Total Pages : 194 pages
Book Rating : 4.:/5 (357 download)
Download or read book Carbon Doping and Hydrogen Passivation in InGaAs and InP/InGaAs Heterojunction Bipolar Transistors Grown by Metalorganic Chemical Vapor Deposition written by Stephen Andrew Stockman and published by . This book was released on 1993 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Brian Gerard Moser
Publisher :
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.:/5 (45 download)
Download or read book Resonant Tunneling at Room Temperature in Carbon-doped Base InP/InGaAs/InP Composite Collector Heterojunction Bipolar Transistors Grown by Gas-source Molecular Beam Epitaxy written by Brian Gerard Moser and published by . This book was released on 2000 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : C. R. Abernathy
Publisher : The Electrochemical Society
ISBN 13 : 9781566772266
Total Pages : 278 pages
Book Rating : 4.7/5 (722 download)
Download or read book State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX) written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1999 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Influence of Carbon Sources on Thermal Stability of C-doped Base InP/InGaAs Heterojunction Bipolar Transistors written by and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report effects of annealing on InP/InGaAs heterojunction bipolar transistors (HBTs) having an InGaAs base layer C-doped using CBr 4 or CBrCl 3 as the C source. It was found that ramp thermal annealing (RTA) after growth removes H atoms, which are located in C-dopedd InGaAs base layer and deactivate C acceptors, resulting in a decrease of base sheet resistance. An RTA simultaneously can deteriorate the C-doped base layer. An evaluation of base sheet resistance and dc current gain indicates that InP/InGaAs HBTs with C-doped InGaAs grown using CBrCl 3 are more stable in terms of thermal stress than those grown using CBr 4.
Author : Patrick Roblin
Publisher : Cambridge University Press
ISBN 13 : 1139437461
Total Pages : 726 pages
Book Rating : 4.1/5 (394 download)
Download or read book High-Speed Heterostructure Devices written by Patrick Roblin and published by Cambridge University Press. This book was released on 2002-03-07 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
Author : Institute of Physics Conference
Publisher : CRC Press
ISBN 13 : 1000157105
Total Pages : 1352 pages
Book Rating : 4.0/5 (1 download)
Download or read book Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 written by Institute of Physics Conference and published by CRC Press. This book was released on 2020-10-28 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Author : Jiann S. Yuan
Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 496 pages
Book Rating : 4.3/5 (91 download)
Download or read book SiGe, GaAs, and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Author :
Publisher :
ISBN 13 :
Total Pages : 3 pages
Book Rating : 4.:/5 (946 download)
Download or read book Materials Growth and Optimization of InP/InGaAs and InAlAs/InGaAs Heterojunction Bipolar Transistor Structures by MOCVD Utilizing Carbon and Zinc Base Layer Dopants written by and published by . This book was released on 1996 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work in this Phase I program will examine the effect of base dopant species and various structural modifications on the material properties, device performance, and thermal stability of InP based HBTs. Pertinent variations to be implemented in the epitaxial structure include: (1) Zn or C doping in the InGaAs base layers, (2) InP or InAlAs as the emitter material, (3) single or double heterostructure configurations, and (4) the presence or absence of undoped InGaAs setback layer(s). The effect of the various modifications on pertinent material properties, overall device performance, and resistance to thermal degradation will be characterized and the approach(es) suitable for future optimization and accelerated life testing will be identified.
Author : Cammy R Abernathy
Publisher : World Scientific
ISBN 13 : 981450159X
Total Pages : 565 pages
Book Rating : 4.8/5 (145 download)
Download or read book Topics In Growth And Device Processing Of Iii-v Semiconductors written by Cammy R Abernathy and published by World Scientific. This book was released on 1996-11-09 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Author : Keh-chung Wang
Publisher : World Scientific
ISBN 13 : 9814495891
Total Pages : 374 pages
Book Rating : 4.8/5 (144 download)
Download or read book High Speed Circuits For Lightwave Communications, Selected Topics In Electronics And Systems, Vol 1 written by Keh-chung Wang and published by World Scientific. This book was released on 1999-01-25 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: High speed circuits are crucial for increasing the bandwidth of transmission and switching of voice/video/data over optical fiber networks. The ever-increasing demand for bit rates higher than those available due to the explosion of Internet traffic has driven engineers to develop integrated circuits of performance approaching 100 Gb/s. Commercial lightwave products using high speed circuits of 10 Gb/s and beyond are readily available.High Speed Circuits for Lightwave Communications presents the latest information on circuit design, measured results, applications, and product development. It covers electronic and opto-electronic circuits for transmission, receiving, and cross-point switching. These circuits were implemented with various state-of-the-art IC technologies, including Si BJT, GaAs MESFET, HEMT, HBT, as well as InP HEMT and HBT. The book, written by more than 50 experts, will benefit graduate students, researchers, and engineers who are interested in or work in this exciting and challenging field of optical communications.
Author : Delong Cui
Publisher :
ISBN 13 :
Total Pages : 658 pages
Book Rating : 4.3/5 (91 download)
Download or read book InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits written by Delong Cui and published by . This book was released on 2001 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Woo
Publisher : CRC Press
ISBN 13 : 9780750303422
Total Pages : 1352 pages
Book Rating : 4.3/5 (34 download)
Download or read book Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 written by Woo and published by CRC Press. This book was released on 1996-04-25 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
