Modeling and Characterization of RF and Microwave Power FETs

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Publisher : Cambridge University Press
ISBN 13 : 113946812X
Total Pages : 375 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis Modeling and Characterization of RF and Microwave Power FETs by : Peter Aaen

Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

GaN Transistors for Efficient Power Conversion

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Publisher : John Wiley & Sons
ISBN 13 : 1119594375
Total Pages : 388 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-23 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements

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Publisher : Cuvillier Verlag
ISBN 13 : 3736989067
Total Pages : 160 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements by : Peng Luo

Download or read book GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements written by Peng Luo and published by Cuvillier Verlag. This book was released on 2019-01-09 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN HEMTs are regarded as one of the most promising RF power transistor technologies thanks to their high-voltage high-speed characteristics. However, they are still known to be prone to trapping effects, which hamper achievable output power and linearity. Hence, accurately and efficiently modeling the trapping effects is crucial in nonlinear large-signal modeling for GaN HEMTs. This work proposes a trap model based on Chalmers model, an industry standard large-signal model. Instead of a complex nonlinear trap description, only four constant parameters of the proposed trap model need to be determined to accurately describe the significant impacts of the trapping effects, e.g., drain-source current slump, typical kink observed in pulsed I/V characteristics, and degradation of the output power. Moreover, the extraction procedure of the trap model parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. The model validity is tested through small- and large-signal model verification procedures. Particularly, it is shown that the use of this trap model enables to dramatically improve the large-signal simulation results.

Different Types of Field-Effect Transistors

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Publisher : BoD – Books on Demand
ISBN 13 : 9535131753
Total Pages : 194 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Different Types of Field-Effect Transistors by : Momčilo Pejović

Download or read book Different Types of Field-Effect Transistors written by Momčilo Pejović and published by BoD – Books on Demand. This book was released on 2017-06-07 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1959, Atalla and Kahng at Bell Labs produced the first successful field-effect transistor (FET), which had been long anticipated by other researchers by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Very quickly, they became the fundamental basis of digital electronic circuits. Up to this point, there are more than 20 different types of field-effect transistors that are incorporated in various applications found in everyday's life. Based on this fact, this book was designed to overview some of the concepts regarding FETs that are currently used as well as some concepts that are still being developed.

Nanowire Field Effect Transistors: Principles and Applications

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Publisher : Springer Science & Business Media
ISBN 13 : 1461481244
Total Pages : 292 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Nanowire Field Effect Transistors: Principles and Applications by : Dae Mann Kim

Download or read book Nanowire Field Effect Transistors: Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim

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Author :
Publisher : World Scientific
ISBN 13 : 9814477575
Total Pages : 381 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim by : Tatsuya Ezaki

Download or read book Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim written by Tatsuya Ezaki and published by World Scientific. This book was released on 2008-06-03 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Negative Capacitance Field Effect Transistors

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Author :
Publisher : CRC Press
ISBN 13 : 1000933326
Total Pages : 149 pages
Book Rating : 4.0/5 (9 download)

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Book Synopsis Negative Capacitance Field Effect Transistors by : Young Suh Song

Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by CRC Press. This book was released on 2023-10-31 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.

The Physics and Modeling of Mosfets

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Author :
Publisher : World Scientific
ISBN 13 : 9812812059
Total Pages : 381 pages
Book Rating : 4.8/5 (128 download)

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Book Synopsis The Physics and Modeling of Mosfets by : Mitiko Miura-Mattausch

Download or read book The Physics and Modeling of Mosfets written by Mitiko Miura-Mattausch and published by World Scientific. This book was released on 2008 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Design, Simulation and Construction of Field Effect Transistors

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Publisher : BoD – Books on Demand
ISBN 13 : 1789234166
Total Pages : 168 pages
Book Rating : 4.7/5 (892 download)

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Book Synopsis Design, Simulation and Construction of Field Effect Transistors by : Dhanasekaran Vikraman

Download or read book Design, Simulation and Construction of Field Effect Transistors written by Dhanasekaran Vikraman and published by BoD – Books on Demand. This book was released on 2018-07-18 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.

Organic Field-Effect Transistors

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Publisher : CRC Press
ISBN 13 : 1351837575
Total Pages : 578 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Organic Field-Effect Transistors by : Zhenan Bao

Download or read book Organic Field-Effect Transistors written by Zhenan Bao and published by CRC Press. This book was released on 2018-10-03 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: The remarkable development of organic thin film transistors (OTFTs) has led to their emerging use in active matrix flat-panel displays, radio frequency identification cards, and sensors. Exploring one class of OTFTs, Organic Field-Effect Transistors provides a comprehensive, multidisciplinary survey of the present theory, charge transport studies, synthetic methodology, materials characterization, and current applications of organic field-effect transistors (OFETs). Covering various aspects of OFETs, the book begins with a theoretical description of charge transport in organic semiconductors at the molecular level. It then discusses the current understanding of charge transport in single-crystal devices, small molecules and oligomers, conjugated polymer devices, and charge injection issues in organic transistors. After describing the design rationales and synthetic methodologies used for organic semiconductors and dielectric materials, the book provides an overview of a variety of characterization techniques used to probe interfacial ordering, microstructure, molecular packing, and orientation crucial to device performance. It also describes the different processing techniques for molecules deposited by vacuum and solution, followed by current technological examples that employ OTFTs in their operation. Featuring respected contributors from around the world, this thorough, up-to-date volume presents both the theory behind OFETs and the latest applications of this promising technology.

An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors

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Publisher :
ISBN 13 : 9781423516590
Total Pages : 143 pages
Book Rating : 4.5/5 (165 download)

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Book Synopsis An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors by : James M. Sattler

Download or read book An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors written by James M. Sattler and published by . This book was released on 2004-03-01 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*10(exp 16) e/ cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents These increased currents are only maintained at low temperatures (T

Low-noise Microwave Transistors & Amplifiers

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Publisher :
ISBN 13 : 9780879421564
Total Pages : 461 pages
Book Rating : 4.4/5 (215 download)

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Book Synopsis Low-noise Microwave Transistors & Amplifiers by : Hatsuaki Fukui

Download or read book Low-noise Microwave Transistors & Amplifiers written by Hatsuaki Fukui and published by . This book was released on 1981 with total page 461 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN-based Heterostructure Field Effect Transistors and MMICs for High Frequency Applications

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Publisher :
ISBN 13 : 9783832282820
Total Pages : 165 pages
Book Rating : 4.2/5 (828 download)

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Book Synopsis GaN-based Heterostructure Field Effect Transistors and MMICs for High Frequency Applications by : Sanghyun Seo

Download or read book GaN-based Heterostructure Field Effect Transistors and MMICs for High Frequency Applications written by Sanghyun Seo and published by . This book was released on 2009 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Field-Effect Transistors

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Publisher :
ISBN 13 : 9781032493800
Total Pages : 0 pages
Book Rating : 4.4/5 (938 download)

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Book Synopsis Advanced Field-Effect Transistors by : Dharmendra Singh Yadav

Download or read book Advanced Field-Effect Transistors written by Dharmendra Singh Yadav and published by . This book was released on 2023-12-22 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Advanced Field Effect Transistor: Theory and Applications offers a fresh perspective on the design and analysis of advanced FET devices and its applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in field of transistors beyond the CMOS. This book used lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of field effect transistor, including their theory and applications. In order to improve readers' learning opportunities, "Advanced Field Effect Transistor: Theory and Applications", presents a wide range of crucial topics: Design and Challenges in Tunnel FET Various modelling approach for FET Study of organic thin-film transistors Biosensing application of FET Implementation of Memory/Logic gates with FET Advent of low Semiconductor Devices and Related Implications for Upcoming Technology Nodes provides valuable insight into low-power devices and their applicability in the wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. The book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications"--

Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

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Publisher : Cuvillier Verlag
ISBN 13 : 3736938446
Total Pages : 129 pages
Book Rating : 4.7/5 (369 download)

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Book Synopsis Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications by : Michael Hosch

Download or read book Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications written by Michael Hosch and published by Cuvillier Verlag. This book was released on 2011-08-08 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.

Parameter Extraction and Complex Nonlinear Transistor Models

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Publisher : Artech House Publishers
ISBN 13 : 9781630817442
Total Pages : 0 pages
Book Rating : 4.8/5 (174 download)

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Book Synopsis Parameter Extraction and Complex Nonlinear Transistor Models by : Günter Kompa

Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Günter Kompa and published by Artech House Publishers. This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and generative adversarial network (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.