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Basic Equations For The Modeling Of Gallium Nitride Gan High Electron Mobility Transistors Hemts
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Author :National Aeronautics and Space Administration (NASA) Publisher :Createspace Independent Publishing Platform ISBN 13 :9781720402664 Total Pages :70 pages Book Rating :4.4/5 (26 download)
Book Synopsis Basic Equations for the Modeling of Gallium Nitride (Gan) High Electron Mobility Transistors (Hemts) by : National Aeronautics and Space Administration (NASA)
Download or read book Basic Equations for the Modeling of Gallium Nitride (Gan) High Electron Mobility Transistors (Hemts) written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-05-29 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).Freeman, Jon C.Glenn Research CenterGALLIUM NITRIDES; FIELD EFFECT TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; ENERGY GAPS (SOLID STATE); MICROWAVE EQUIPMENT; POLARIZATION (CHARGE SEPARATION); PIEZOELECTRICITY
Book Synopsis Basic Equations for the Modeling of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) by :
Download or read book Basic Equations for the Modeling of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) written by and published by . This book was released on 2003 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis BASIC EQUATIONS FOR THE MODELING OF GALLIUM NITRIDE (GAN) HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS)... NASA by :
Download or read book BASIC EQUATIONS FOR THE MODELING OF GALLIUM NITRIDE (GAN) HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS)... NASA written by and published by . This book was released on 2003* with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Basic Equations for the Modeling of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) by : Jon C. Freeman
Download or read book Basic Equations for the Modeling of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) written by Jon C. Freeman and published by . This book was released on 2003 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis BASIC EQUATIONS FOR THE MODELING OF GALLIUM NITRIDE (GAN) HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS)... NASA/TM--2003-211983... NATIONAL AER by :
Download or read book BASIC EQUATIONS FOR THE MODELING OF GALLIUM NITRIDE (GAN) HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS)... NASA/TM--2003-211983... NATIONAL AER written by and published by . This book was released on 2003* with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Jaime Alberto Zamudio Flores Publisher :kassel university press GmbH ISBN 13 :3862193640 Total Pages :257 pages Book Rating :4.8/5 (621 download)
Book Synopsis Device Characterization and Modeling of Large-Size GaN HEMTs by : Jaime Alberto Zamudio Flores
Download or read book Device Characterization and Modeling of Large-Size GaN HEMTs written by Jaime Alberto Zamudio Flores and published by kassel university press GmbH. This book was released on 2012-08-21 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Book Synopsis A Compact Transport and Charge Model for GaN-based High Electron Mobility Transistors for RF Applications by : Ujwal Radhakrishna
Download or read book A Compact Transport and Charge Model for GaN-based High Electron Mobility Transistors for RF Applications written by Ujwal Radhakrishna and published by . This book was released on 2013 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect transistors. Self-consistent current and charge expressions in the model require very few parameters. The parameters have straightforward physical meanings and can be extracted through independent measurements. The model is implemented in Verilog-A and is compatible with state of the art circuit simulators. The new model is calibrated and validated with experimental DC I-V and S-parameter measurements of fabricated devices. Using the model, a projection of cut-off frequency (f-[tau]) of GaN-based HEMTs with scaling is performed to highlight performance bottlenecks.
Book Synopsis Industrialization of the Developing Countries: Basic Problems and Issues for Action by :
Download or read book Industrialization of the Developing Countries: Basic Problems and Issues for Action written by and published by . This book was released on 1974 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements by : Peng Luo
Download or read book GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements written by Peng Luo and published by Cuvillier Verlag. This book was released on 2019-01-09 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN HEMTs are regarded as one of the most promising RF power transistor technologies thanks to their high-voltage high-speed characteristics. However, they are still known to be prone to trapping effects, which hamper achievable output power and linearity. Hence, accurately and efficiently modeling the trapping effects is crucial in nonlinear large-signal modeling for GaN HEMTs. This work proposes a trap model based on Chalmers model, an industry standard large-signal model. Instead of a complex nonlinear trap description, only four constant parameters of the proposed trap model need to be determined to accurately describe the significant impacts of the trapping effects, e.g., drain-source current slump, typical kink observed in pulsed I/V characteristics, and degradation of the output power. Moreover, the extraction procedure of the trap model parameters is based on pulsed S-parameter measurements, which allow to freeze traps and isolate the trapping effects from self-heating. The model validity is tested through small- and large-signal model verification procedures. Particularly, it is shown that the use of this trap model enables to dramatically improve the large-signal simulation results.
Book Synopsis Modeling Reliability of Gallium Nitride High Electron Mobility Transistors by : Balaji Padmanabhan
Download or read book Modeling Reliability of Gallium Nitride High Electron Mobility Transistors written by Balaji Padmanabhan and published by . This book was released on 2013 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in the channel increases, the influence of electromechanical coupling reduces as the electric field in the comprising layers reduces. A Monte Carlo device simulator that implements the theoretical model was developed to model the transport in GaN HEMTs. It is observed that with the coupled formulation, the drain current degradation in the device varies from 2%-18% depending on the gate voltage. Degradation reduces with the increase in the gate voltage due to the increase in the electron gas density in the channel. The output and transfer characteristics match very well with the experimental data. An electro-thermal device simulator was developed coupling the Monte Caro-Poisson solver with the energy balance solver for acoustic and optical phonons. An output current degradation of around 2-3 % at a drain voltage of 5V due to self-heating was observed. It was also observed that the electrostatics near the gate to drain region of the device changes due to the hot spot created in the device from self heating. This produces an electric field in the direction of accelerating the electrons from the channel to surface states. This will aid to the current collapse phenomenon in the device. Thus, the electric field in the gate to drain region is very critical for reliable performance of the device. Simulations emulating the charging of the surface states were also performed and matched well with experimental data. Methods to improve the reliability performance of the device were also investigated in this work. A shield electrode biased at source potential was used to reduce the electric field in the gate to drain extension region. The hot spot position was moved away from the critical gate to drain region towards the drain as the shield electrode length and dielectric thickness were being altered.
Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2014-09-15 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Book Synopsis Gallium Nitride High Mobility Electron Transistors for Power Amplification Applications by : Oliver Peter Amnuayphol
Download or read book Gallium Nitride High Mobility Electron Transistors for Power Amplification Applications written by Oliver Peter Amnuayphol and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: With increasing demand for high power density switching devices and a more advanced cellular network, i.e. 5G, on the impending horizon, wide-bandgap semiconductors are quickly becoming the de facto semiconductor device type to serve this need, of which the Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) device in particular has seen increasing demand due to its unique combination of favorable compound material characteristics and highly efficient operation. In this project, GaN HEMT devices are designed, fabricated, and characterized, and a 12-element, empirical equivalent circuit for GaN HEMTs is modeled. For modeling, published intrinsic and extrinsic characteristics of a selected device were analyzed and used as a template for creating a Symbolically Defined Device (SSD) model in Keysight’s Advanced Design System (ADS) software. This model was then used to obtain a key device characterization parameter, namely current-voltage (I-V) curves, through a curve-fitting process utilizing analytical equations. The AlGaN/GaN HEMT device design and fabrication process flow is discussed, after which the device is characterized and analyzed with regards to the impact of nitride stress liners on AlGaN/GaN HEMT device performance.
Book Synopsis Dynamic Switching Modeling for Gallium Nitride High Electron Mobility Transistor at Cryogenic Temperatures by : Yibo Xu
Download or read book Dynamic Switching Modeling for Gallium Nitride High Electron Mobility Transistor at Cryogenic Temperatures written by Yibo Xu and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride high electron mobility transistors (GaN HEMT) have faster switching speeds and lower on-resistances than silicon-based counterparts. A growing need to develop dynamic analytical GaN HEMT model owing to its unique properties. In this study, a dynamic temperature-dependent GaN HEMT analytical model was built. A nonlinear curve fitting technique was applied to model the DC current-voltage characteristics (I-V), and a GaN HEMT equivalent subcircuit was designed and built in LTspice to simulate the dynamic switching performance at cryogenic temperatures. A 650V enhancement mode GaN HEMT, GS66508P, manufactured by GaN Systems Inc. was used as a testbed for our model validation. The related details for important parameter extraction and measurement processes are included in the thesis. With measured characterization results implemented into the model and a double-pulse tester (DPT) equivalent circuit built in LTspice, the DC I-V characteristics and dynamic switching behavior from -150°C to 20°C have good agreement comparing with the actual experimental measurements. The junction temperature and ambient temperature changing profiles of the device can also be simulated within the model simulation. The limitations of the model and future work are also discussed.
Book Synopsis 2-D Modeling of GaN HEMTS Incorporating the Piezoelectric Effect by : Karl P. Eimers
Download or read book 2-D Modeling of GaN HEMTS Incorporating the Piezoelectric Effect written by Karl P. Eimers and published by . This book was released on 2001-03-01 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are microwave power devices that promise to revolutionize the capability of Navy radar systems. The Office of Naval Research is currently finding basic research of developing microwave power amplifiers for use in future radar systems. This thesis incorporates piezoelectric (PZ) equations in the Silvaco Atlas software for modeling GaN/AlGaN structures. The PZ effect enhances a two dimensional electron gas at the GaN/AIGaN interface due to stress induced polarization.
Book Synopsis Modeling of Gallium Nitride High Electron Mobility Transistors by : Ashwin Ashok
Download or read book Modeling of Gallium Nitride High Electron Mobility Transistors written by Ashwin Ashok and published by . This book was released on 2008 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Aluminium Gallium Nitride/gallium Nitride High Electron Mobility Transistors by : Yao-Cheng Liu
Download or read book Aluminium Gallium Nitride/gallium Nitride High Electron Mobility Transistors written by Yao-Cheng Liu and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Gallium Nitride High Electron Mobility Transistors Towards Highly Efficient and Reliable Power Switchin by : Lars Heuken
Download or read book Study of Gallium Nitride High Electron Mobility Transistors Towards Highly Efficient and Reliable Power Switchin written by Lars Heuken and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
