Auge Ni Au Based Ohmic Contacts To Gaas Structures

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Auge-ni-Au Based Ohmic Contacts to Gaas Structures

Author : Abhilash T. S
Publisher : LAP Lambert Academic Publishing
ISBN 13 : 9783845400808
Total Pages : 152 pages
Book Rating : 4.4/5 (8 download)

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Book Synopsis Auge-ni-Au Based Ohmic Contacts to Gaas Structures by : Abhilash T. S

Download or read book Auge-ni-Au Based Ohmic Contacts to Gaas Structures written by Abhilash T. S and published by LAP Lambert Academic Publishing. This book was released on 2011-07 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the magnetic, electrical and surface morphological characterization of AuGe/Ni/Au Ohmic contact metallization on GaAs/AlGaAs two-dimensional electron gas (2DEG) multilayer structures. These structures, have well known applications in infrared sources/detectors, high-speed electronic devices (HEMTs) and high sensitivity Hall effect magnetic field sensors. Deposition of AuGe/Ni/Au followed by rapid thermal anneal is a well tested recipe for Ohmic contact formation in these structures. Alternatives to Ni such as Cr or Ti may be used for Ohmic contact formation in sensors, where possible distortion of the measured field by the ferromagnetic Ni is an issue. Explicit studies of the magnetic properties of the processed Ohmic contact metallization structures are rare in the literature. The book describes process optimization wherein three parameters- magnetization, contact resistance and surface roughness- are taken into account. It also describes some new insights into the changes that take place during processing in the Ohmic contact metallization structure, prior to the alloyed-contact formation.

Physics of Semiconductor Devices

Author : Vikram Kumar
Publisher : Allied Publishers
ISBN 13 : 9780819445001
Total Pages : 748 pages
Book Rating : 4.4/5 (45 download)

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Book Synopsis Physics of Semiconductor Devices by : Vikram Kumar

Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by Allied Publishers. This book was released on 2002 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Compound Semiconductor Electronics

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789810223250
Total Pages : 388 pages
Book Rating : 4.2/5 (232 download)

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Book Synopsis Compound Semiconductor Electronics by : Michael Shur

Download or read book Compound Semiconductor Electronics written by Michael Shur and published by World Scientific. This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.

Aging Behavior of Au-Based Ohmic Contacts to Gaas

Author : National Aeronautics and Space Administration (NASA)
Publisher : Createspace Independent Publishing Platform
ISBN 13 : 9781725075764
Total Pages : 30 pages
Book Rating : 4.0/5 (757 download)

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Book Synopsis Aging Behavior of Au-Based Ohmic Contacts to Gaas by : National Aeronautics and Space Administration (NASA)

Download or read book Aging Behavior of Au-Based Ohmic Contacts to Gaas written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-08-16 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat treatment) contacts made to thin emitter (0.15 micrometer) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 micrometer) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented. Fatemi, Navid S. Unspecified Center NASA-CR-182146, E-4171, NAS 1.26:182146 NAS3-24105; RTOP 506-41-11...

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995

Download Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 PDF Online Free

Author : Woo
Publisher : CRC Press
ISBN 13 : 9780750303422
Total Pages : 1352 pages
Book Rating : 4.3/5 (34 download)

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Book Synopsis Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 by : Woo

Download or read book Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 written by Woo and published by CRC Press. This book was released on 1996-04-25 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

Au - Ge - Ni Ohmic Contacts to N - GaAs

Author : Robert Alan Bruce
Publisher :
ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (11 download)

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Book Synopsis Au - Ge - Ni Ohmic Contacts to N - GaAs by : Robert Alan Bruce

Download or read book Au - Ge - Ni Ohmic Contacts to N - GaAs written by Robert Alan Bruce and published by . This book was released on 1985 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Processing of 'Wide Band Gap Semiconductors

Author : S. J. Pearton
Publisher : Cambridge University Press
ISBN 13 : 0080946755
Total Pages : 593 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Processing of 'Wide Band Gap Semiconductors by : S. J. Pearton

Download or read book Processing of 'Wide Band Gap Semiconductors written by S. J. Pearton and published by Cambridge University Press. This book was released on 2013-01-15 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

Parameter Extraction and Complex Nonlinear Transistor Models

Author : Gunter Kompa
Publisher : Artech House
ISBN 13 : 1630817457
Total Pages : 610 pages
Book Rating : 4.6/5 (38 download)

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Book Synopsis Parameter Extraction and Complex Nonlinear Transistor Models by : Gunter Kompa

Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.

Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures: Volume 184

Author : V. Swaminathan
Publisher : Mrs Proceedings
ISBN 13 :
Total Pages : 304 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures: Volume 184 by : V. Swaminathan

Download or read book Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures: Volume 184 written by V. Swaminathan and published by Mrs Proceedings. This book was released on 1990 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA

Author : Gerald B. Stringfellow
Publisher : CRC Press
ISBN 13 : 1000157067
Total Pages : 696 pages
Book Rating : 4.0/5 (1 download)

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Book Synopsis Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA by : Gerald B. Stringfellow

Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-26 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

Reliability of Compound Analogue Semiconductor Integrated Circuits

Author : Aris Christou
Publisher : RIAC
ISBN 13 : 1933904194
Total Pages : 487 pages
Book Rating : 4.9/5 (339 download)

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Book Synopsis Reliability of Compound Analogue Semiconductor Integrated Circuits by : Aris Christou

Download or read book Reliability of Compound Analogue Semiconductor Integrated Circuits written by Aris Christou and published by RIAC. This book was released on 2006 with total page 487 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Transfer Printing Technologies and Applications

Author : Changhong Cao
Publisher : Elsevier
ISBN 13 : 0443188440
Total Pages : 539 pages
Book Rating : 4.4/5 (431 download)

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Book Synopsis Transfer Printing Technologies and Applications by : Changhong Cao

Download or read book Transfer Printing Technologies and Applications written by Changhong Cao and published by Elsevier. This book was released on 2024-01-26 with total page 539 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transfer printing (TP) is a class of techniques for the deterministic assembly of disparate micro/nanomaterials into functional devices, and has become an emerging suite of technologies for micro/nanofabrication. Systems enabled by transfer printing range from complex molecular-scale materials, to high-performance hard materials, to fully integrated devices. A variety of sub-techniques for different purposes have grown significantly in the past decade, leading to non-conventional electronics, optoelectronics, photovoltaics, and photonics, and enabling the development of non-planar and flexible electronics.Highlights breakthrough results and systems enabled by novel TP techniques.Highlights breakthrough results and systems enabled by novel TP techniques.Transfer Printing Technologies and Applications is a complete guide to transfer printing techniques and their cutting-edge applications. The first section of the book provides a solid grounding in transfer printing methods and the fundamentals behind these technologies. The second part of the book focuses on state-of-the-art applications enabled by transfer printing techniques, including areas such as flexible sensors, flexible transistors, wearable devices, thin film-based energy systems, flexible displays, microLED-based displays, metal films, and more. A concluding chapter addresses current challenges and future opportunities in this innovative field.Highlights breakthrough results and systems enabled by novel TP techniques.Highlights breakthrough results and systems enabled by novel TP techniques.This book is of interest to researchers and advanced students across nanotechnology, materials science, electrical engineering, mechanical engineering, chemistry, and biomedicine, as well as scientists, engineers, and R&D professionals involved with nanomaterials, micro- or nano-fabrication, microelectromechanical systems (MEMS), display technology, biotechnology, and devices. Highlights breakthrough results and systems enabled by novel TP techniques. Highlights breakthrough results and systems enabled by novel TP techniques.Highlights breakthrough results and systems enabled by novel TP techniques.Highlights breakthrough results and systems enabled by novel TP techniques. Highlights breakthrough results and systems enabled by novel TP techniques. Examines a range of transfer printing technologies and their specific features for different applications Highlights breakthrough results and systems enabled by novel TP techniques Offers an insightful outlook into trends and future directions in each sub-area of transfer printing

Scientific Bulletin

Author :
Publisher :
ISBN 13 :
Total Pages : 680 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Scientific Bulletin by :

Download or read book Scientific Bulletin written by and published by . This book was released on 1985 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ONR Far East Scientific Bulletin

Author :
Publisher :
ISBN 13 :
Total Pages : 688 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis ONR Far East Scientific Bulletin by :

Download or read book ONR Far East Scientific Bulletin written by and published by . This book was released on with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Review

Author :
Publisher :
ISBN 13 :
Total Pages : 300 pages
Book Rating : 4.3/5 ( download)

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Book Synopsis Review by :

Download or read book Review written by and published by . This book was released on 1988 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III

Download State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III PDF Online Free

Author : Edward B. Stokes
Publisher : The Electrochemical Society
ISBN 13 : 9781566773492
Total Pages : 292 pages
Book Rating : 4.7/5 (734 download)

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Book Synopsis State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III by : Edward B. Stokes

Download or read book State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III written by Edward B. Stokes and published by The Electrochemical Society. This book was released on 2003 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Study of Ohmic Contacts on Si(28) - Implanted GaAs

Author : Diane M. Fischer
Publisher :
ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Study of Ohmic Contacts on Si(28) - Implanted GaAs by : Diane M. Fischer

Download or read book Study of Ohmic Contacts on Si(28) - Implanted GaAs written by Diane M. Fischer and published by . This book was released on 1982 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study of fabricating a low resistant contact on Si(28) - implanted n-type GaAs was conducted. Ion doses of 1 x 10 to the 13th power/sq. cm to 1 x 10 to the 15th power/sq. cm and annealing temperatures of 700 C to 900 C were tested in order to achieve the lowest specific contact resistivity. Experimental results show that a low specific contact resistivity of 2.78 x 10 to the 7th power ohm/sq. cm can be obtained on GaAs layers which have been formed by Si(28) (3 x 10 to the 14th power/sq. cm) implantation in undoped semi-insulating GaAs annealed at 850 C using an oxygen-free chemical vapor deposited Si3N4 layer as an encapsulant followed by subsequent deposition of AuGe/Ni ohmic contacts. Recommendations are discussed concerning further studies and a design for a new contact test pattern which would improve the degree of accuracy of resistivity measurements.