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Author : H. Sitter
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (637 download)
Download or read book Atomic Layer Epitaxy and Related Surface Processes written by H. Sitter and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M Ozeki
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (79 download)
Download or read book Atomic Layer Epitaxy and Related Surface Processes written by M Ozeki and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Masashi Ozeki
Publisher :
ISBN 13 :
Total Pages : 621 pages
Book Rating : 4.:/5 (318 download)
Download or read book ALE-3 written by Masashi Ozeki and published by . This book was released on 1994 with total page 621 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 30 pages
Book Rating : 4.:/5 (227 download)
Download or read book Atomic Layer Epitaxy Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization written by and published by . This book was released on 1991 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: An integrated growth and surface characterization system containing a hot filament reactor, sample transfer station, ESD and XPS has been established to investigate the ALE of diamond films. Complementary experiments concerned with the nucleation of diamond on molten surfaces, e. g., Al and Ge have also been conducted. Formation of GeO2 or an aluminum carbide and the degradation of the diamond by the molten material inhibited nucleation on the melted area. Monocrystalline thin films of Beta-SiC have been achieved in the temperature range of 850 deg -980 deg C by atomic layer-by-layer deposition of Si and C species via sequential exposures of Si(100) substrates to Si2H6 and C2H4. A UHV analytical system containing TPD, AES and XPS is being constructed in concert with the SiC ALE studies to determine the reaction chemistry important to this process. An eximer laser ablation system for the ALE of CeO2 has been completed and employed to successfully deposit films of this material on Si(100).
Author : ALE (4, 1996, Linz)
Publisher :
ISBN 13 :
Total Pages : 283 pages
Book Rating : 4.:/5 (174 download)
Download or read book Proceedings of the Fourth International Symposium on Atomic Layer Epitaxy and Related Surface Processes written by ALE (4, 1996, Linz) and published by . This book was released on 1997 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Masashi Ozeki
Publisher :
ISBN 13 :
Total Pages : 621 pages
Book Rating : 4.:/5 (258 download)
Download or read book Proceedings of the Third International Symposium on Atomic Layer Epitaxy and Related Surface Processes written by Masashi Ozeki and published by . This book was released on 1994 with total page 621 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Helmut Sitter
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.:/5 (437 download)
Download or read book ALE-4 written by Helmut Sitter and published by . This book was released on 1997 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 34 pages
Book Rating : 4.:/5 (227 download)
Download or read book Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization written by and published by . This book was released on 1993 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer epitaxy of monocrystalline Beta-SiC on Si(100) and alpha (6H)-SiC(0001) substrates has been accomplished at 850 deg C by alternating the supplies of Si2H6, C2H4 and atomic hydrogen and without the use of a carbonizing step. Conformal deposition of SiC has been demonstrated within trenches etched into Si(100) wafers. P-type films have also been achieved using A1 as a dopant. Devices including HBTs with Beta-SiC emitters have been designed. Hydrogen plasma cleaning of SiC surfaces has been studied. XPS has shown that this process effectively removes C-0, C-F and C-H bonding at the surface. Temperature programmed desorption has been used to look at the amount of subsurface hydrogen generated during plasma cleaning. The diamond precursors of chlorinated methylsilanes and the substrate of Si(100) were subjected to bias enhanced high- frequency CVD. No difference in diamond nucleation density between the precursors was observed. An interface structure of single crystal CeO2/Si(111) grown by laser ablation has been investigated. An interfacial reaction occurred between these phases during deposition which resulted in the formation of an oxygen deficient amorphous(a) CeOx layer and an SiO2 layer. Post annealing in 02 caused the disappearance of the a-CeOx and the regrowth of crystalline CeO2. Atomic Layer Epitaxy (ALE), Diamond, Silicon carbide, CeO2, Conformal position, XPS, Temperature programmed desorption, Chlorinated methylsilanes, Interfacial reaction.
Author :
Publisher :
ISBN 13 :
Total Pages : 43 pages
Book Rating : 4.:/5 (227 download)
Download or read book Atomic Layer Epitaxy Group 4 Materials: Surface Processes, Thin Films, Devices and Their Characterization written by and published by . This book was released on 1993 with total page 43 pages. Available in PDF, EPUB and Kindle. Book excerpt: The maximum temperature at which self-terminating monolayers of Si can be formed on Si(100) from Si2H6 has been determined to be 570 deg C. As such, the chemical reactivity Of C2H4 has been determined to be insufficient at this temperature, and acetylene has been selected as the successor C precursor due to its superior reactivity and chemisorption properties. A cryogenic purifier for removing acetone has been commissioned. Trenched Si(100) wafers are also being made to assess the ALE process for sidewall deposition uniformity and future bipolar devices. Nonstoichiometric, Si-rich SiC has been produced with an associated decrease in the band gap. An AES/XPS UHV analytical system and associated ALE deposition system has been commissioned and integrated into a much larger surface science system. These dual systems will allow a thorough study and characterization of the both the initial nucleation of SiC and the overall ALE growth process of SiC. Tetramethylsilane and hexamethyldisilane have been deposited onto Si substrates in a hot filament CVD chamber to investigate their ability to promote ALE of diamond under DC biasing and a variety of system parameters. An electron gun and heating stage has been added to the growth chamber to enable AES and substrate heating. Good quality diamond films have been nucleated on deposited interlayers of both precursor compounds. The films have been examined by SEM and Raman spectroscopy. Good quality epitaxial films of CeO2 have been grown on Si(111) using laser ablation. Atomically clean substrates and slow growth rates were determined necessary for epitaxy.
Download or read book Trade, Dept. of written by and published by . This book was released on 19?? with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The ephemera collection contains documents of everyday life generally covering publications of fewer than five pages. These may include: advertising material, area guides, booklets, brochures, samples of merchandise postcards, posters, programs, stickers and tickets.
Author : H Sitter
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (822 download)
Download or read book ALE-4 written by H Sitter and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : H. Setter
Publisher :
ISBN 13 :
Total Pages : 283 pages
Book Rating : 4.:/5 (368 download)
Download or read book ALE-4 written by H. Setter and published by . This book was released on 1997 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tommi Kääriäinen
Publisher : John Wiley & Sons
ISBN 13 : 1118062779
Total Pages : 274 pages
Book Rating : 4.1/5 (18 download)
Download or read book Atomic Layer Deposition written by Tommi Kääriäinen and published by John Wiley & Sons. This book was released on 2013-05-28 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first edition was published in 2008, Atomic Layer Deposition (ALD) has emerged as a powerful, and sometimes preferred, deposition technology. The new edition of this groundbreaking monograph is the first text to review the subject of ALD comprehensively from a practical perspective. It covers ALD's application to microelectronics (MEMS) and nanotechnology; many important new and emerging applications; thermal processes for ALD growth of nanometer thick films of semiconductors, oxides, metals and nitrides; and the formation of organic and hybrid materials.
Author : Nicola Pinna
Publisher : John Wiley & Sons
ISBN 13 : 3527639934
Total Pages : 472 pages
Book Rating : 4.5/5 (276 download)
Download or read book Atomic Layer Deposition of Nanostructured Materials written by Nicola Pinna and published by John Wiley & Sons. This book was released on 2012-09-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (due to the systematic presentation of the results at the forefront of the technique and their applications) and the ones of students and newcomers to the fi eld (through the first part detailing the basic aspects of the technique). This book is a must-have for all Materials Scientists, Surface Chemists, Physicists, and Scientists in the Semiconductor Industry.
Author : T. Suntola
Publisher : Springer
ISBN 13 :
Total Pages : 200 pages
Book Rating : 4.:/5 (45 download)
Download or read book Atomic Layer Epitaxy written by T. Suntola and published by Springer. This book was released on 1989-10-31 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed study of the Atomic Layer Epitaxy technique (ALE), its development, current and potential applications. The rapid development of coating technologies over the last 25 years has been instrumental in generating interest and expertise in thin films of materials, and indeed the market for thin film coatings is currently £3 billion with projected annual growth of 20 to 30% [1]. ALE is typical of thin-film processes in that problems in the processing or preparation of good quality epitaxial films have been overcome, resulting in better performance, novel applications of previously unsuitable materials, and the development of new devices. Many materials exhibit interesting and novel properties when prepared as thin films and doped. Vapour-deposited coatings and films are used extensively in the semiconductor and related industries for making single devices, integrated circuits, microwave hybrid integrated circuits, compact discs, solar reflective glazing, fibre optics, photo voltaic cells, sensors, displays, and many other products in general, everyday use. The ALE technique was developed by a research team led by Tuomo Suntola, working for Instrumentarium Oy in Finland. The key members of this team were lorma Antson, Arto Pakkala and Sven Lindfors. In 1977, the research team moved from Instrumentarium to Lohja Corporation, where they continued the development of ALE and were granted a patent in the same year. By 1980, the technique was sufficiently advanced that they were producing flat-screen electroluminescent displays based on a manganese-doped zinc sulphide layer.
Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
ISBN 13 : 146148054X
Total Pages : 266 pages
Book Rating : 4.4/5 (614 download)
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author : Peter Rudolph
Publisher : Elsevier
ISBN 13 : 0444633065
Total Pages : 1420 pages
Book Rating : 4.4/5 (446 download)
Download or read book Handbook of Crystal Growth written by Peter Rudolph and published by Elsevier. This book was released on 2014-11-04 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy.Volume 2A - Presents the status and future of Czochralski and float zone growth of dislocation-free silicon - Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades - Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics - Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B - Explores capillarity control of the crystal shape at the growth from the melt - Highlights modeling of heat and mass transport dynamics - Discusses control of convective melt processes by magnetic fields and vibration measures - Includes imperative information on the segregation phenomenon and validation of compositional homogeneity - Examines crystal defect generation mechanisms and their controllability - Illustrates proper automation modes for ensuring constant crystal growth process - Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries
