Atomic Diffusion In Iii V Semiconductors

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Atomic Diffusion in III-V Semiconductors

Author : Brian Tuck
Publisher : CRC Press
ISBN 13 : 1000447960
Total Pages : 252 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis Atomic Diffusion in III-V Semiconductors by : Brian Tuck

Download or read book Atomic Diffusion in III-V Semiconductors written by Brian Tuck and published by CRC Press. This book was released on 2021-05-31 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology. Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

Atomic Diffusion in Semiconductors

Author : Derek Shaw
Publisher : Springer
ISBN 13 :
Total Pages : 630 pages
Book Rating : 4.:/5 (42 download)

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Book Synopsis Atomic Diffusion in Semiconductors by : Derek Shaw

Download or read book Atomic Diffusion in Semiconductors written by Derek Shaw and published by Springer. This book was released on 1973-05 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.

Diffusion in GaAs and other III-V Semiconductors

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
ISBN 13 : 303570676X
Total Pages : 520 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Diffusion in GaAs and other III-V Semiconductors by : David J. Fisher

Download or read book Diffusion in GaAs and other III-V Semiconductors written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 1998-03-30 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.

Atomic Diffusion in Semiconductors

Author : D. Shaw
Publisher :
ISBN 13 : 9781461586371
Total Pages : 624 pages
Book Rating : 4.5/5 (863 download)

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Book Synopsis Atomic Diffusion in Semiconductors by : D. Shaw

Download or read book Atomic Diffusion in Semiconductors written by D. Shaw and published by . This book was released on 1973-05-01 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Atomic Diffusion in Semiconductor Structures

Author : G. B. Abdullaev
Publisher : Routledge
ISBN 13 :
Total Pages : 358 pages
Book Rating : 4.:/5 ( download)

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Book Synopsis Atomic Diffusion in Semiconductor Structures by : G. B. Abdullaev

Download or read book Atomic Diffusion in Semiconductor Structures written by G. B. Abdullaev and published by Routledge. This book was released on 1987 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Doping in III-V Semiconductors

Author : E. Fred Schubert
Publisher : E. Fred Schubert
ISBN 13 : 0986382639
Total Pages : pages
Book Rating : 4.9/5 (863 download)

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Book Synopsis Doping in III-V Semiconductors by : E. Fred Schubert

Download or read book Doping in III-V Semiconductors written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2015-08-18 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

III–V Compound Semiconductors and Devices

Author : Keh Yung Cheng
Publisher : Springer Nature
ISBN 13 : 3030519031
Total Pages : 537 pages
Book Rating : 4.0/5 (35 download)

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Book Synopsis III–V Compound Semiconductors and Devices by : Keh Yung Cheng

Download or read book III–V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.

Atomic Diffusion in Semiconductor Structures

Author : Gasan Mamed Bagir ogly Abdullaev
Publisher : Gordon & Breach Science Pub
ISBN 13 : 9782881241529
Total Pages : pages
Book Rating : 4.2/5 (415 download)

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Book Synopsis Atomic Diffusion in Semiconductor Structures by : Gasan Mamed Bagir ogly Abdullaev

Download or read book Atomic Diffusion in Semiconductor Structures written by Gasan Mamed Bagir ogly Abdullaev and published by Gordon & Breach Science Pub. This book was released on 1987-06-01 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductors

Author : W.M. Jr. Coughran
Publisher : Springer Science & Business Media
ISBN 13 : 1461384079
Total Pages : 173 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Semiconductors by : W.M. Jr. Coughran

Download or read book Semiconductors written by W.M. Jr. Coughran and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor and integrated-circuit modeling are an important part of the high-technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering workstations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such modeling. This two-volume set covers three topic areas: process modeling and circuit simulation in Volume I and device modeling in Volume II. Process modeling provides the geometry and impurity doping characteristics that are prerequisites for device modeling; device modeling, in turn, provides static current and transient charge characteristics needed to specify the so-called compact models employed by circuit simulators. The goal of these books is to bring together scientists and mathematicians to discuss open problems, algorithms to solve such, and to form bridges between the diverse disciplines involved.

Diffusion in Materials

Author : A.L. Laskar
Publisher : Springer Science & Business Media
ISBN 13 : 940091976X
Total Pages : 684 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Diffusion in Materials by : A.L. Laskar

Download or read book Diffusion in Materials written by A.L. Laskar and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is the proceedings of the NATO Advanced Study Institute, "Diffusion in Materials", held at "Centre Paul Langevin", Aussois, during March 12-25, 1989. There were 105 participants of whom 24 were lecturers and members of the international advisory committee. In addition to the participants from NATO countries, a small number of participants came from Australia, Hungary, Poland and Tunisia. The principal aim of the organizing committee was to bring together scientists of wide interest and expertise in the field of diffusion and to familiarize the young workers in material science with the wide range of theoretical models and methods and of experimental techniques . The Institute was concerned with the study of diffusion and related phenomena in solids which are at the cutting edge of novel technologies. The discussion of basic theories of defects in solids and their transport, with their applications in the understanding of diffusion processes in "simple solids" was followed by the wide range of current theoretical models and methods, experimental techniques and their potential. The lectures on the diffusion in specific materials included : metals, dilute and concentrated alloys, simple and compound semiconductors, stoichiometric and non-stoichiometric oxides, high-Tc compounds, carbides, nitrides, silicates, conducting polymers and thin films, ionic, superionic, amorphous and irradiated materials.

Dopants and Defects in Semiconductors, Second Edition

Author : Matthew D. McCluskey
Publisher : CRC Press
ISBN 13 : 1351977970
Total Pages : 543 pages
Book Rating : 4.3/5 (519 download)

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Book Synopsis Dopants and Defects in Semiconductors, Second Edition by : Matthew D. McCluskey

Download or read book Dopants and Defects in Semiconductors, Second Edition written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology

Author : G. R. Srinivasan
Publisher :
ISBN 13 :
Total Pages : 826 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology by : G. R. Srinivasan

Download or read book Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by . This book was released on 1991 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Microelectronic Materials

Author : C.R.M. Grovenor
Publisher : Routledge
ISBN 13 : 1351431544
Total Pages : 557 pages
Book Rating : 4.3/5 (514 download)

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Book Synopsis Microelectronic Materials by : C.R.M. Grovenor

Download or read book Microelectronic Materials written by C.R.M. Grovenor and published by Routledge. This book was released on 2017-10-05 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.

Spintronics Handbook, Second Edition: Spin Transport and Magnetism

Author : Evgeny Y. Tsymbal
Publisher : CRC Press
ISBN 13 : 0429784384
Total Pages : 619 pages
Book Rating : 4.4/5 (297 download)

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Book Synopsis Spintronics Handbook, Second Edition: Spin Transport and Magnetism by : Evgeny Y. Tsymbal

Download or read book Spintronics Handbook, Second Edition: Spin Transport and Magnetism written by Evgeny Y. Tsymbal and published by CRC Press. This book was released on 2019-05-20 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.

Electronic Materials

Author : L. S. Miller
Publisher : Springer Science & Business Media
ISBN 13 : 9780306436550
Total Pages : 576 pages
Book Rating : 4.4/5 (365 download)

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Book Synopsis Electronic Materials by : L. S. Miller

Download or read book Electronic Materials written by L. S. Miller and published by Springer Science & Business Media. This book was released on 1991 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: With one or two exceptions, the materials dealt with are all active materials those involved in the processing of signals in a way that depends crucially on some specific property of those materials. The types of signals considered include optical as well as electronic functions, and also chemical s

Dopants and Defects in Semiconductors

Author : Matthew D. McCluskey
Publisher : CRC Press
ISBN 13 : 143983153X
Total Pages : 372 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Dopants and Defects in Semiconductors by : Matthew D. McCluskey

Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif

Semiconductor Quantum Well Intermixing

Author : J. T. Lie
Publisher : CRC Press
ISBN 13 : 1482283344
Total Pages : 695 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Semiconductor Quantum Well Intermixing by : J. T. Lie

Download or read book Semiconductor Quantum Well Intermixing written by J. T. Lie and published by CRC Press. This book was released on 2014-04-21 with total page 695 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.