Molecular Beam Epitaxy

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Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Heterostructure Epitaxy and Devices - HEAD’97

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Publisher : Springer Science & Business Media
ISBN 13 : 9780792350125
Total Pages : 342 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Heterostructure Epitaxy and Devices - HEAD’97 by : Peter Kordos

Download or read book Heterostructure Epitaxy and Devices - HEAD’97 written by Peter Kordos and published by Springer Science & Business Media. This book was released on 1998-03-31 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Workshop Heterostructure Epitaxy and Devices HEAD'97 was held from October 12 to 16, 1997 at Smolenice Castle, the House of Scientists of the Slovak Academy of Sciences and was co-organized by the Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava and the Institute of Thin Film and Ion Technology, Research Centre, liilich. It was the third in a series of workshops devoted to topics related to heterostructure epitaxy and devices and the second included into the category of Advanced Research Workshops (ARW) under sponsorship of the NATO. More than 70 participants from 15 countries attended (Austria, Belarus, Belgium, Czech Republic, Finland, Germany, Greece, Hungary, Italy, Poland, Russia, Slovakia, Ukraine, the United Kingdom and the USA). Novel microelectronic and optoelectronic devices are based on semiconductor heterostructures. The goal of the ARW HEAD'97 was to discuss various questions related to the use of new materials (e.g. compound semiconductors based on high band-gap nitrides and low band-gap antimonides) and new procedures (low-temperature epitaxial growth), as well as new principles (nanostructures, quantum wires and dots, etc.) aimed at realizing high-performance heterostructure based electronic devices. Almost 70 papers (invited and contributed oral presentations as well as posters) were presented at the ARW HEAD'97 and the main part of them is included into these Proceedings.

Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996

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Author :
Publisher : CRC Press
ISBN 13 : 1000157121
Total Pages : 1096 pages
Book Rating : 4.0/5 (1 download)

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Book Synopsis Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 by : M.S. Shur

Download or read book Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 written by M.S. Shur and published by CRC Press. This book was released on 2020-10-29 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.

Silicon Molecular Beam Epitaxy

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Publisher : CRC Press
ISBN 13 : 1351093525
Total Pages : 411 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

International Aerospace Abstracts

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Publisher :
ISBN 13 :
Total Pages : 940 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Recent Awards in Engineering

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Publisher :
ISBN 13 :
Total Pages : 986 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Recent Awards in Engineering by :

Download or read book Recent Awards in Engineering written by and published by . This book was released on 1983 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemical Abstracts

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Publisher :
ISBN 13 :
Total Pages : 2668 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Comprehensive Semiconductor Science and Technology

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Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

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Publisher : CRC Press
ISBN 13 : 1000454568
Total Pages : 114 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications by : N. Mohankumar

Download or read book Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications written by N. Mohankumar and published by CRC Press. This book was released on 2021-09-28 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

Scientific and Technical Aerospace Reports

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Publisher :
ISBN 13 :
Total Pages : 1460 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Proceedings of the IEEE ... International Symposium on Compound Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 1096 pages
Book Rating : 4.:/5 (44 download)

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Book Synopsis Proceedings of the IEEE ... International Symposium on Compound Semiconductors by :

Download or read book Proceedings of the IEEE ... International Symposium on Compound Semiconductors written by and published by . This book was released on 1996 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics Briefs

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Publisher :
ISBN 13 :
Total Pages : 1248 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Physics Briefs by :

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Selected Topics in Group IV and II-VI Semiconductors

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Author :
Publisher : Newnes
ISBN 13 : 0444596437
Total Pages : 465 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Selected Topics in Group IV and II-VI Semiconductors by : E.H.C. Parker

Download or read book Selected Topics in Group IV and II-VI Semiconductors written by E.H.C. Parker and published by Newnes. This book was released on 2012-12-02 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

The Engineering Index Annual

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Publisher :
ISBN 13 :
Total Pages : 2264 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis The Engineering Index Annual by :

Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

Electrical & Electronics Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1904 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Applied Science & Technology Index

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Publisher :
ISBN 13 :
Total Pages : 2948 pages
Book Rating : 4.:/5 (4 download)

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Book Synopsis Applied Science & Technology Index by :

Download or read book Applied Science & Technology Index written by and published by . This book was released on 1997 with total page 2948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

III-V Semiconductor Materials and Devices

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Publisher : Elsevier
ISBN 13 : 0444596356
Total Pages : 740 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis III-V Semiconductor Materials and Devices by : R.J. Malik

Download or read book III-V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.