International Conference on Indium Phosphide and Related Materials

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ISBN 13 :
Total Pages : 602 pages
Book Rating : 4.3/5 (91 download)

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Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Science Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1360 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 1860 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advances in Photodiodes

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Publisher : BoD – Books on Demand
ISBN 13 : 953307163X
Total Pages : 482 pages
Book Rating : 4.5/5 (33 download)

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Book Synopsis Advances in Photodiodes by : Gian-Franco Dalla Betta

Download or read book Advances in Photodiodes written by Gian-Franco Dalla Betta and published by BoD – Books on Demand. This book was released on 2011-03-22 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photodiodes, the simplest but most versatile optoelectronic devices, are currently used in a variety of applications, including vision systems, optical interconnects, optical storage systems, photometry, particle physics, medical imaging, etc. Advances in Photodiodes addresses the state-of-the-art, latest developments and new trends in the field, covering theoretical aspects, design and simulation issues, processing techniques, experimental results, and applications. Written by internationally renowned experts, with contributions from universities, research institutes and industries, the book is a valuable reference tool for students, scientists, engineers, and researchers.

International Aerospace Abstracts

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ISBN 13 :
Total Pages : 940 pages
Book Rating : 4.3/5 (91 download)

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Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Analysis and Simulation of Heterostructure Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

SiGe, GaAs, and InP Heterojunction Bipolar Transistors

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Publisher : Wiley-Interscience
ISBN 13 :
Total Pages : 496 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis SiGe, GaAs, and InP Heterojunction Bipolar Transistors by : Jiann S. Yuan

Download or read book SiGe, GaAs, and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.

Silicon-germanium Heterojunction Bipolar Transistors

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Publisher : Artech House
ISBN 13 : 9781580535991
Total Pages : 592 pages
Book Rating : 4.5/5 (359 download)

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Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Dissertation Abstracts International

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Publisher :
ISBN 13 :
Total Pages : 768 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Dissertation Abstracts International written by and published by . This book was released on 2003 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:

JJAP

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Publisher :
ISBN 13 :
Total Pages : 430 pages
Book Rating : 4.X/5 (6 download)

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Book Synopsis JJAP by :

Download or read book JJAP written by and published by . This book was released on 2002 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings

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Publisher :
ISBN 13 :
Total Pages : 478 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Proceedings by :

Download or read book Proceedings written by and published by . This book was released on 1995 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics Briefs

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Publisher :
ISBN 13 :
Total Pages : 1058 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Physics Briefs by :

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Engineering Index Annual

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ISBN 13 :
Total Pages : 2264 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis The Engineering Index Annual by :

Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

Japanese Journal of Applied Physics

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Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Japanese Journal of Applied Physics by :

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2002 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Compact Modeling

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Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)

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Book Synopsis Compact Modeling by : Gennady Gildenblat

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

American Doctoral Dissertations

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ISBN 13 :
Total Pages : 848 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis American Doctoral Dissertations by :

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1999 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SiGe Heterojunction Bipolar Transistors

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Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.