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Author : Lindor E. Henrickson
Publisher :
ISBN 13 :
Total Pages : 160 pages
Book Rating : 4.:/5 (238 download)
Download or read book Analysis and Reliability of Deep Submicron MOSFETs written by Lindor E. Henrickson and published by . This book was released on 1990 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hyungsoon Shin
Publisher :
ISBN 13 :
Total Pages : 278 pages
Book Rating : 4.:/5 (269 download)
Download or read book MOSFET modeling and drain engineering analysis for deep submicron dimensions written by Hyungsoon Shin and published by . This book was released on 1990 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jeroen A. Croon
Publisher : Springer Science & Business Media
ISBN 13 : 0387243135
Total Pages : 214 pages
Book Rating : 4.3/5 (872 download)
Download or read book Matching Properties of Deep Sub-Micron MOS Transistors written by Jeroen A. Croon and published by Springer Science & Business Media. This book was released on 2006-06-20 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Author :
Publisher : Allied Publishers
ISBN 13 : 9780780381629
Total Pages : 434 pages
Book Rating : 4.3/5 (816 download)
Download or read book IEEE TENCON 2003 written by and published by Allied Publishers. This book was released on 2003 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:
![Download Comparative Parameter Sensitivity Analysis for Deep Submicron and 1.5 [micro]m MOSFETs PDF Online Free](https://books.google.com/books/content/images/frontcover/zcSgAAAACAAJ?fife=w200-h370)
Author : Renate Sitte
Publisher :
ISBN 13 : 9780868574769
Total Pages : 11 pages
Book Rating : 4.5/5 (747 download)
Download or read book Comparative Parameter Sensitivity Analysis for Deep Submicron and 1.5 [micro]m MOSFETs written by Renate Sitte and published by . This book was released on 1992 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ricardo Reis
Publisher : Springer
ISBN 13 : 1461440785
Total Pages : 271 pages
Book Rating : 4.4/5 (614 download)
Download or read book Circuit Design for Reliability written by Ricardo Reis and published by Springer. This book was released on 2014-11-08 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physical understanding, modeling and simulation, on-chip characterization, layout solutions, and design techniques that are effective to enhance the reliability of various circuit units. The authors provide readers with techniques for state of the art and future technologies, ranging from technology modeling, fault detection and analysis, circuit hardening, and reliability management.
Author : Electrochemical society. Meeting
Publisher : The Electrochemical Society
ISBN 13 : 1566777925
Total Pages : 588 pages
Book Rating : 4.5/5 (667 download)
Download or read book Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2010 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jeroen A. Croon
Publisher : Springer
ISBN 13 : 9780387504803
Total Pages : 0 pages
Book Rating : 4.5/5 (48 download)
Download or read book Matching Properties of Deep Sub-Micron MOS Transistors written by Jeroen A. Croon and published by Springer. This book was released on 2008-11-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Author : Norman Einspruch
Publisher : Elsevier
ISBN 13 : 0323153135
Total Pages : 383 pages
Book Rating : 4.3/5 (231 download)
Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Author : J. W. McPherson
Publisher : Springer Science & Business Media
ISBN 13 : 1441963480
Total Pages : 324 pages
Book Rating : 4.4/5 (419 download)
Download or read book Reliability Physics and Engineering written by J. W. McPherson and published by Springer Science & Business Media. This book was released on 2010-08-05 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: All engineers could bene?t from at least one course in reliability physics and engineering. It is very likely that, starting with your very ?rst engineering po- tion, you will be asked — how long is your newly developed device expected to last? This text was designed to help you to answer this fundamentally important question. All materials and devices are expected to degrade with time, so it is very natural to ask — how long will the product last? The evidence for material/device degradation is apparently everywhere in nature. A fresh coating of paint on a house will eventually crack and peel. Doors in a new home can become stuck due to the shifting of the foundation. The new ?nish on an automobile will oxidize with time. The tight tolerances associated with ?nely meshed gears will deteriorate with time. Critical parameters associated with hi- precision semiconductor devices (threshold voltages, drive currents, interconnect resistances, capacitor leakages, etc.) will degrade with time. In order to und- stand the lifetime of the material/device, it is important to understand the reliability physics (kinetics) for each of the potential failure mechanisms and then be able to develop the required reliability engineering methods that can be used to prevent, or at least minimize the occurrence of, device failure.
Author : Harish Garg
Publisher : Springer Nature
ISBN 13 : 9811999090
Total Pages : 415 pages
Book Rating : 4.8/5 (119 download)
Download or read book Advances in Reliability, Failure and Risk Analysis written by Harish Garg and published by Springer Nature. This book was released on 2023-04-08 with total page 415 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book collects select chapters on modern industrial problems related to uncertainties and vagueness in the expert domain of knowledge. The book further provides the knowledge related to application of various mathematical and statistical tools in these areas. The results presented in the book help the researchers and scientists in handling complicated projects in their domains. Useful to industrialists, academicians, researchers and students alike, the book aims to help managers and technical specialists in designing and implementation of reliability and risk programs as below: Ensure the system safety and risk informed asset management Follow a proper strategy to maintain the mechanical components of the system Schedule the proper actions throughout the product life cycle Understand the structure and cost of a complex system Plan the proper schedule to improve the reliability and life of the system Identify unwanted failures and set up preventive and correction action
Author : Srinivas Jallepalli
Publisher :
ISBN 13 :
Total Pages : 232 pages
Book Rating : 4.:/5 (371 download)
Download or read book Monte Carlo based analysis of carrier transport in deep submicron silicon MOSFETs written by Srinivas Jallepalli and published by . This book was released on 1996 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Iraj Sadegh Amiri
Publisher : Springer
ISBN 13 : 3030045137
Total Pages : 122 pages
Book Rating : 4.0/5 (3 download)
Download or read book Device Physics, Modeling, Technology, and Analysis for Silicon MESFET written by Iraj Sadegh Amiri and published by Springer. This book was released on 2018-12-13 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications.
Author : Francis Balestra
Publisher : Springer Science & Business Media
ISBN 13 : 9401003394
Total Pages : 349 pages
Book Rating : 4.4/5 (1 download)
Download or read book Progress in SOI Structures and Devices Operating at Extreme Conditions written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.
Author : James Chieh-Tsung Chen
Publisher :
ISBN 13 :
Total Pages : 290 pages
Book Rating : 4.:/5 (34 download)
Download or read book Statistical Modeling of MOSFETs and Interconnects for Deep-submicron Technologies written by James Chieh-Tsung Chen and published by . This book was released on 1998 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hisham Haddara
Publisher : Springer Science & Business Media
ISBN 13 : 1461313554
Total Pages : 240 pages
Book Rating : 4.4/5 (613 download)
Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
Author : Christian Piguet
Publisher : CRC Press
ISBN 13 : 1351836609
Total Pages : 499 pages
Book Rating : 4.3/5 (518 download)
Download or read book Low-Power CMOS Circuits written by Christian Piguet and published by CRC Press. This book was released on 2018-10-03 with total page 499 pages. Available in PDF, EPUB and Kindle. Book excerpt: The power consumption of microprocessors is one of the most important challenges of high-performance chips and portable devices. In chapters drawn from Piguet's recently published Low-Power Electronics Design, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools addresses the design of low-power circuitry in deep submicron technologies. It provides a focused reference for specialists involved in designing low-power circuitry, from transistors to logic gates. The book is organized into three broad sections for convenient access. The first examines the history of low-power electronics along with a look at emerging and possible future technologies. It also considers other technologies, such as nanotechnologies and optical chips, that may be useful in designing integrated circuits. The second part explains the techniques used to reduce power consumption at low levels. These include clock gating, leakage reduction, interconnecting and communication on chips, and adiabatic circuits. The final section discusses various CAD tools for designing low-power circuits. This section includes three chapters that demonstrate the tools and low-power design issues at three major companies that produce logic synthesizers. Providing detailed examinations contributed by leading experts, Low-Power CMOS Circuits: Technology, Logic Design, and CAD Tools supplies authoritative information on how to design and model for high performance with low power consumption in modern integrated circuits. It is a must-read for anyone designing modern computers or embedded systems.
