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Author : Chia-Ping Chen
Publisher :
ISBN 13 :
Total Pages : 344 pages
Book Rating : 4.:/5 (89 download)
Download or read book An Investigation of the Schottky Barrier Enhancement to N-GaAs written by Chia-Ping Chen and published by . This book was released on 1995 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 75 pages
Book Rating : 4.:/5 (227 download)
Download or read book Investigation of Schottky Barrier on GaAs and InP Using a Multi-Disciplined Approach written by and published by . This book was released on 1990 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major progress is reported in understanding and bringing under control metal/GaAs contacts. The key to this realization that defects at the interface can control the electrical properties of such contacts. By properly controlling these defects it appears that the Schottky barrier height may be varied strongly to obtain the desired values for specific applications, i.e. large barriers for Schottky gates and small values for ohmic contacts. Evidence is presented that the key defects are As and Ga antisites. The Fermi level position at the interface, Ef, is the most important parameter in determining the electrical properties of the contract. Under normal conditions the As antisite levels dominate and the Fermi level is pinned near mid-gap. Producing excess As moves Ef toward the CBM whereas, excess Ga moves it toward the VBM.
Author : Nathan Newman
Publisher :
ISBN 13 :
Total Pages : 9 pages
Book Rating : 4.:/5 (227 download)
Download or read book Investigation of Schottky Barrier on GaAs and InP Using a Multidisciplined Approach written by Nathan Newman and published by . This book was released on 1988 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: A major development this year was the Advanced Unified Defect Model (AUDM). This focus on the AsGa and the GaAs antisites as the key defect which can govern the electronic properties at GaAs/metal as well as other GaAs interfaces. One importance of this is that it provides a framework through which the interfacial chemistry can be related to changes in Schottky barrier height. Details of the AUDM and its development are given in paper 6 on our list of publications. A copy is attached to this report. The Fermi level position will be set by the relative number of AsGa and GaAs antisites. Because of the excess As and LEC GaAs, the AsGa antisites usually dominate when LEC crystals are used. Thus the Fermi level is pinning near midgap. If an interface reaction produces excess As, the Fermi level, Ef, moves toward the CVM; if excess Ga Ef moves toward the VBM. As can be seen from the Figure, good agreement is obtained with the careful experimental data generated under this contract in annealing experiments. However, it is important that this work be expanded to other metals. Oxides or other foreign layers at the interface complicate matters. However, it appears that the model appears even in these cases. The potential significance of this model goes far beyond the annealing experiments listed above. For example, it suggests that interfacial behavior may depend on the amount of As in the As grown crystals. Thus, we are initiating work on LEC crystals grown less As rich. (RH).
Author : Cheng Cai
Publisher :
ISBN 13 :
Total Pages : 244 pages
Book Rating : 4.:/5 (319 download)
Download or read book Studies on Schottky Barriers with Heterojunctions for III-V and II-VI Semiconductor Compounds written by Cheng Cai and published by . This book was released on 2000 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert R. Daniels
Publisher :
ISBN 13 :
Total Pages : 334 pages
Book Rating : 4.:/5 (89 download)
Download or read book A Study of the Nature of the Schottky Barrier During Ultralow Coverage Stages of GaAs(110)/Al and GaAs(110)/In Interface Formation written by Robert R. Daniels and published by . This book was released on 1984 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 19 pages
Book Rating : 4.:/5 (727 download)
Download or read book Au and Al Schottky Barrier Formation on GaAs (100) Surfaces Prepared by Thermal Desorption of a Protective Arsenic Coating written by and published by . This book was released on 1991 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoelectron spectroscopy has been used as a tool to investigate the initial stages of Schottky barrier formation on GaAs (100) surfaces. This is a popular technique that has been used by many researchers in the past to measure the band bending (or shift) of the valence band and conduction band (a measure of the Schottky barrier shift), while the Fermi level remains fixed at the system ground (i.e., the ground of the spectrometer). Metal deposition on a semiconductor surface can alter the Schottky barrier at the surface and pin the Fermi level near the middle of the energy gap. Extremely clean and crystallographically perfect surfaces are required in this study. Toward this end, a method of protecting the GaAs surface was employed which consists of capping the GaAs surface with a layer of As. Upon introduction into the high vacuum system the As is thermally desorbed, revealing a pure GaAs surface. Our work was motivated by a previous study (Brillson et al) on similarly capped specimens, which suggested that metal overlayers do not pin the Schottky barrier in GaAs. Barrier heights varied by as much as 0.75 eV between Al and Au overlayers. This large energy range is a striking result in view of the fact that a considerable number of prior studies on both (110) and (100) surfaces have found that all metals will pin within a narrow (0.25 eV) range at midgap. We repeated the measurements of Brillson on the identically doped samples used in their study using two extreme range metals of Au and Al as overlayers. We found that the barrier height measurements on low doped n-type samples used in this work and in the previous work are affected by photovoltaic effects, even at room temperature. This was determined from taking spectra at a number of temperatures between 20 K and room temperature and looking for shifts. 16 refs., 7 figs.
Download or read book Thermodynamic and Kinetic Stabilities of Two-phase Systems Involving Gallium Arsenide and an Intermetallic Phase. Final Report written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Results are reported on the following:schottky barrier enhancement to n-GaAs and enhancement due to the formation of (Ga, Al)As at the contact interfaces via an exchange mechanism; results for the Ni(Ga, Al)/n-GaAs, Al/n-GaAs and Ni/Al/n-GaAs contacts; phase relationship studies on reciprocal systems; and results for the contact of Pt[sub 3]In[sub 7]/n-GaAs.
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ISBN 13 :
Total Pages : 804 pages
Book Rating : 4.:/5 (3 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
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ISBN 13 :
Total Pages : 272 pages
Book Rating : 4.3/5 ( download)
Download or read book Solar Energy Update written by and published by . This book was released on 1983-08 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1470 pages
Book Rating : 4.U/5 (183 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 1470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerald B. Stringfellow
Publisher : CRC Press
ISBN 13 : 100011225X
Total Pages : 680 pages
Book Rating : 4.0/5 (1 download)
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author : Christopher Scott Gworek
Publisher :
ISBN 13 :
Total Pages : 110 pages
Book Rating : 4.:/5 (34 download)
Download or read book The Schottky Barrier Height of Noble Metal Schottky Contacts to N-GaAs Under Hydrostatic Pressure written by Christopher Scott Gworek and published by . This book was released on 1999 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael F. Millea
Publisher :
ISBN 13 :
Total Pages : 40 pages
Book Rating : 4.:/5 (227 download)
Download or read book SCHOTTKY BARRIERS ON GaAs written by Michael F. Millea and published by . This book was released on 1969 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: The forward current of Schottky barriers on n-type GaAs is investigated as a function of electron concentration in the range of 8 x 10 to the 17th power to 8 x 10 to the 18th power/cc at temperatures from 297 to 4.2K. Both vacuum cleaved and chemically polished surfaces are used. The majority of the junctions studied are gold Schottky barriers, but tin and lead contacts are also examined. The predominant current mechanism is field emission at liquid nitrogen temperature and below for the range of electron concentrations used. These data are in excellent quantitative agreement at 77K with the field emission analysis of Padovani and Stratton of one uses a two-band model for the imaginary wave vector kn. At 297K, thermionic field emission predominates, but for an electron density above 3 x 10 to the 18th power/cc the field emission mechanism with a two-band model still gives reasonable agreement. (Author).
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ISBN 13 :
Total Pages : 616 pages
Book Rating : 4.3/5 (91 download)
Download or read book Energy: a Continuing Bibliography with Indexes written by and published by . This book was released on 1976 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 240 pages
Book Rating : 4.F/5 ( download)
Download or read book Energy written by and published by . This book was released on 1982 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 272 pages
Book Rating : 4.:/5 (31 download)
Download or read book Research in Progress written by and published by . This book was released on 1990 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Suzanne E. Mohney
Publisher :
ISBN 13 :
Total Pages : 324 pages
Book Rating : 4.:/5 (89 download)
Download or read book Metallurgical Studies of the Nickel/Indium Phosphide, Palladium/Indium Phosphide, and Platinum/Indium Phosphide Systems and Their Application to the Design of Electrical Contacts to Indium Phosphide written by Suzanne E. Mohney and published by . This book was released on 1994 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
