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An Indium Phosphide Double Heterojunction Bipolar Transistor Technology For 80 Gb S Integrated Circuits
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Book Synopsis An Indium-phosphide Double-heterojunction Bipolar Transistor Technology for 80 Gb/s Integrated Circuits by : Iwan Schnyder
Download or read book An Indium-phosphide Double-heterojunction Bipolar Transistor Technology for 80 Gb/s Integrated Circuits written by Iwan Schnyder and published by . This book was released on 2005-01-01 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology by : Tomas Krämer
Download or read book High-speed InP Heterojunction Bipolar Transistors and Integrated Circuits in Transferred Substrate Technology written by Tomas Krämer and published by . This book was released on 2010 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Current Trends In Heterojunction Bipolar Transistors by : M F Chang
Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Book Synopsis Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits by : Urs Hammer
Download or read book Sub-micron InP/GaAsSb/InP Double Heterojunction Bipolar Transistors for Ultra High-speed Digital Integrated Circuits written by Urs Hammer and published by . This book was released on 2010 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heterojunction Bipolar Transistors for Circuit Design by : Jianjun Gao
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Book Synopsis InP-based Heterojunction Bipolar Transistor Technology for High Speed Devices and Circuits by : John Charles Cowles (Jr.)
Download or read book InP-based Heterojunction Bipolar Transistor Technology for High Speed Devices and Circuits written by John Charles Cowles (Jr.) and published by . This book was released on 1994 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP Double Heterojunction Bipolar Transistors for Driver Circuits in Fiber Optical Communication Systems by : Raimond Bauknecht
Download or read book InP Double Heterojunction Bipolar Transistors for Driver Circuits in Fiber Optical Communication Systems written by Raimond Bauknecht and published by . This book was released on 1998 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ultra-Fast Silicon Bipolar Technology by : Ludwig Treitinger
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Book Synopsis Development of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistor and Their Application in Monolithic Microwave Integrated Circuits by : Wei Quan
Download or read book Development of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistor and Their Application in Monolithic Microwave Integrated Circuits written by Wei Quan and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Wideband Direct Conversion IQ Modulators in Indium Phosphide DHBT Technology by :
Download or read book Wideband Direct Conversion IQ Modulators in Indium Phosphide DHBT Technology written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency by :
Download or read book Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :IEEE Electron Devices Society Publisher :Institute of Electrical & Electronics Engineers(IEEE) ISBN 13 :9780780357136 Total Pages :190 pages Book Rating :4.3/5 (571 download)
Book Synopsis Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting by : IEEE Electron Devices Society
Download or read book Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1999 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physical Limitations of InP/InGaAs Heterojunction-bipolar Transistors by : Marcel Rohner
Download or read book Physical Limitations of InP/InGaAs Heterojunction-bipolar Transistors written by Marcel Rohner and published by Hartung & Gorre. This book was released on 2002-01-01 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors by : Nick Gengming Tao
Download or read book Characterization, Simulation and Optimization of Type-II GaAsSb-based Double Heterojunction Bipolar Transistors written by Nick Gengming Tao and published by . This book was released on 2006 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.
Book Synopsis InP/InGaAs Single Hetero-junction Bipolar Transistors for Integrated Photoreceivers Operating at 40 Gb/s and Beyond by : Dieter Huber
Download or read book InP/InGaAs Single Hetero-junction Bipolar Transistors for Integrated Photoreceivers Operating at 40 Gb/s and Beyond written by Dieter Huber and published by . This book was released on 2002 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Multi-level Interconnects for Heterojunction Bipolar Transistor Integrated Circuit Technologies by :
Download or read book Multi-level Interconnects for Heterojunction Bipolar Transistor Integrated Circuit Technologies written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunction bipolar transistors (HBTs) are mesa structures which present difficult planarization problems in integrated circuit fabrication. The authors report a multilevel metal interconnect technology using Benzocyclobutene (BCB) to implement high-speed, low-power photoreceivers based on InGaAs/InP HBTs. Processes for patterning and dry etching BCB to achieve smooth via holes with sloped sidewalls are presented. Excellent planarization of 1.9[micro]m mesa topographies on InGaAs/InP device structures is demonstrated using scanning electron microscopy (SEM). Additionally, SEM cross sections of both the multi-level metal interconnect via holes and the base emitter via holes required in the HBT IC process are presented. All via holes exhibit sloped sidewalls with slopes of 0.4[micro]m/[micro]m to 2[micro]m/[micro]m which are needed to realize a robust interconnect process. Specific contact resistances of the interconnects are found to be less than 6[times] 10[sup[minus]8][Omega]cm[sup 2]. Integrated circuits utilizing InGaAs/InP HBTs are fabricated to demonstrate the applicability and compatibility of the multi-level interconnect technology with integrated circuit processing.
