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Author : Gary Lynn Harris
Publisher :
ISBN 13 :
Total Pages : 314 pages
Book Rating : 4.E/5 ( download)
Download or read book An Experimental Study of Capless Annealing of Ion Implanted Gallium-arsenide written by Gary Lynn Harris and published by . This book was released on 1980 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1370 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1981 with total page 1370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author : Mark R. Wilson
Publisher :
ISBN 13 :
Total Pages : 442 pages
Book Rating : 4.:/5 (143 download)
Download or read book Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide written by Mark R. Wilson and published by . This book was released on 1986 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kevin Gary Orrman-Rossiter
Publisher :
ISBN 13 :
Total Pages : 346 pages
Book Rating : 4.:/5 (219 download)
Download or read book Annealing of Ion-implanted Gallium Arsenide written by Kevin Gary Orrman-Rossiter and published by . This book was released on 1985 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. S. Kular
Publisher :
ISBN 13 :
Total Pages : 285 pages
Book Rating : 4.:/5 (16 download)
Download or read book A Comparative Study of Laser and Thermal Annealing of Zinc Ion Implanted Gallium Arsenide written by S. S. Kular and published by . This book was released on 1979 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 24 pages
Book Rating : 4.:/5 (227 download)
Download or read book Deep Levels in Ion Implanted GaAs (Gallium Arsenide). written by and published by . This book was released on 1986 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: In summary, the DLTS measurements have not found any majority carrier traps with a concentration greater than 1x ten to the 13th power cc after annealing an implanted sample at 850 C The implanted and annealed samples were found to have the same minority carrier trap spectra as the capped and annealed control samples. The capping and annealing results point out the need to investigate other methods such as rapid thermal annealing and capless annealing in order to prevent surface damage on annealing.
Author : C. L. Anderson
Publisher :
ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.:/5 (227 download)
Download or read book Controlled Atmosphere Annealing of Ion Implanted Gallium Arsenide written by C. L. Anderson and published by . This book was released on 1980 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Controlled atmosphere techniques were developed as an alternative to dielectric encapsulation for the high temperature anneal of ion implanted layers in GaAs. Two approaches: (1) the controlled atmosphere technique (CAT), and (2) the melt controlled ambient technique (MCAT) have been investigated. Using the CAT procedure, which involves annealing in flowing hydrogen with an arsenic overpressure, annealing without detectable surface erosion, has been performed at temperatures as high as 950 C, with or without encapsulants. Impurity diffusion, damage recovery, and electrical activity were investigated as a function of anneal parameters. Range studies of technologically important impurities such as S, Si, Se, Be and Mg were carried out. For the first time the role of the encapsulant on implanted profile degradation and the importance of Cr redistribution during the anneal cycle were determined. An improved CAT anneal system capable of production quantity throughput was developed and is in current use for device processing. (Author).
Author : Walter George Opyd
Publisher :
ISBN 13 :
Total Pages : 164 pages
Book Rating : 4.:/5 (386 download)
Download or read book The Annealing and Solid Phase Epitaxy of Ion-implanted Gallium Arsenide by Rapid Thermal Processing written by Walter George Opyd and published by . This book was released on 1989 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jeffrey Ray Cavins
Publisher :
ISBN 13 :
Total Pages : 75 pages
Book Rating : 4.:/5 (227 download)
Download or read book Depth-Resolved Cathodoluminescence Study of Annealed Silicon Implanted Gallium Arsenide written by Jeffrey Ray Cavins and published by . This book was released on 1982 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth-resolved cathodoluminescence was performed on Si ion implanted GaAs. The samples were Cr doped semi-insulating GaAs crystals grown using the horizontal Bridgman method. Nine samples were prepared for this study, four were implanted with 100 keV Si ions at a fluence of 10 to the 13th power/sq. cm, and five were left unimplanted. One each of the implanted and unimplanted samples were annealed at 800 C for 10 minutes, 800 C for 10 seconds, 900 C for 10 minutes, or 900 C for 10 seconds, for a total of eight samples. The ninth sample was left unannealed and unimplanted as a control. Cathodoluminescence data was taken using 1000 V electrons as an excitation source. Depth resolution was achieved by taking spectral data and successively chemically etching the surface of the crystal in 250 A steps. No new peaks were observed in the GaAs during the experiment. The 800 C/10 minute anneal proved to have the greatest effect in optically activating the impurities in the unimplanted samples. The 900 C/10 minute anneals exhibited spectra associated with vacancy complexes.
Author : Robert S. Mason (2LT, USAF.)
Publisher :
ISBN 13 :
Total Pages : 120 pages
Book Rating : 4.:/5 (132 download)
Download or read book Laser Annealing of Ion Implanted Gallium Arsenide written by Robert S. Mason (2LT, USAF.) and published by . This book was released on 1978 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Arkady Michael Horak
Publisher :
ISBN 13 :
Total Pages : 78 pages
Book Rating : 4.:/5 (182 download)
Download or read book Pulsed Laser Annealing of Ion Implanted Gallium Arsenide written by Arkady Michael Horak and published by . This book was released on 1987 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Samuel C. Ling
Publisher :
ISBN 13 :
Total Pages : 15 pages
Book Rating : 4.:/5 (227 download)
Download or read book Radiation Damage and Annealing Effects Studies of Silicon-Implanted Gallium Arsenide written by Samuel C. Ling and published by . This book was released on 1982 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation damage and low temperature (200 degrees-600 degrees C) annealing behavior of 120 keV silicon and selenium ion implants into gallium arsenide have been investigated by Rutherford Backscattering-Channeling and Transmission Electron Microscopy techniques. Lattice location studies of Si implants after high temperature annealing (850 degrees and 950 degrees C) have been conducted using Proton Induced X-Ray Emission method. (Author).
Author : Robert S. Mason
Publisher :
ISBN 13 :
Total Pages : 68 pages
Book Rating : 4.:/5 (227 download)
Download or read book Laser Annealing of Ion Implanted Gallium Arsenide written by Robert S. Mason and published by . This book was released on 1978 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implanted GaAs, irradiated by a Q-switched ruby laser, is examined primarily by cathodoluminescence, as well as ellipsometry and electrical measurements, to evaluate the quality of laser anneal. Weak cathodoluminescence spectra from laser irradiated samples indicate far less radiative centers than in thermally annealed samples. Emitted radiation from existing centers is attenuated by the formation of a surface layer on GaAs during exposure to the ruby laser, resulting in spectra which is slightly weaker than spectra representative of the material's condition. This attenuating layer occurs in both virgin and implanted GaAs exposed to ruby laser radiation. Ion implanted Si, exposed to the same Q-switched ruby laser, is examined by Rutherford backscattering and indicates a return to crystallinity of the implant layer. (Author).
Author : Himanshu Ajit Choksi
Publisher :
ISBN 13 :
Total Pages : 144 pages
Book Rating : 4.:/5 (29 download)
Download or read book A Transmission Electron Microscope Study of Ion-implanted Semi-insulating Gallium Arsenide written by Himanshu Ajit Choksi and published by . This book was released on 1983 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Lih-Yeh Liou
Publisher :
ISBN 13 :
Total Pages : 402 pages
Book Rating : 4.:/5 (782 download)
Download or read book Ion-implanted GaAs and Its Subsequent Annealing Effects written by Lih-Yeh Liou and published by . This book was released on 1985 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : G. R. Srinivasan
Publisher :
ISBN 13 :
Total Pages : 826 pages
Book Rating : 4.:/5 (31 download)
Download or read book Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by . This book was released on 1991 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Alison Schary
Publisher :
ISBN 13 :
Total Pages : 654 pages
Book Rating : 4.E/5 ( download)
Download or read book A Comparison of Epitaxial Layers and Undoped Semi-insulating Substrates for Use in Silicon Implantation Into Gallium Arsenide written by Alison Schary and published by . This book was released on 1988 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:
