Author : James M. Sattler
Publisher :
ISBN 13 : 9781423516590
Total Pages : 143 pages
Book Rating : 4.5/5 (165 download)
Book Synopsis An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors by : James M. Sattler
Download or read book An Analysis of the Effects of Low Energy Electron Radiation of Al(sub X) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors written by James M. Sattler and published by . This book was released on 2004-03-01 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of radiation on AlxGa1-xN/GaN MODFETs is an area of increasing interest to the USAF as these devices become developed and integrated in satellite-based systems Irradiation is also a valuable tool for analyzing the quantum-level characteristics and properties that are responsible for device operation AlxGa1-xN/GaN MODFETs were fabricated and irradiated at liquid nitrogen temperatures by 0,45-1,2MeV electrons up to doses of 6*10(exp 16) e/ cm2. Following irradiation, low temperature I-V measurements were recorded providing dose-dependent measurements Temperature-dependent I-V measurements were also made during room temperature annealing following irradiation I-V measurements indicate radiation-induced changes occur in these devices creating increased gate and drain currents These increased currents are only maintained at low temperatures (T