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An Analysis Of Metal Contacts To Gan
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Book Synopsis An Analysis of Metal Contacts to GaN by : William Patrick Lewis
Download or read book An Analysis of Metal Contacts to GaN written by William Patrick Lewis and published by . This book was released on 2007 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ohmic and Schottky contacts to GaN on sapphire and free standing GaN are investigated. A detailed analysis of the circular Transmission Line Mea-surement (c-TLM) technique is carried out. We show the need to accurately measure the contact radii to extract accurate contact resistivity values, _c using c-TLM, for contacts to p-type GaN. Small measurement errors, _ 0.5 _m, lead to large errors in _c, especially as _c decreases. An alternative technique to extract _c, based on the series resistance of a p-n diode, is investigated. This method relies on uniform current density over the whole metal{semiconductor diode contact and the existence of a singular diode ideality. Defects in p-type GaN on LED material are shown to electroplate preferentially. Ni plated defects annealed in an O2 atmosphere are shown to be passivated, with signi_cant measured improvements in the I{V and L{I char- acteristics of LEDs. Electroless deposition is explored as an alternative contact formation technique. This novel approach yields Ni/Au, p-type ohmic contacts, with a _c comparable with evaporated contacts. A _c of 2.2 x 10_2 cm_2 at room temperature and a _c of 2.5 x 10_2 cm_2 at 410 K indicate the tunneling nature of the contact. The method provides for a reduction in the cost and processing time associated with ohmic contact formation. CoW contacts to n-type GaN are shown to be rectifying even after a 6500C anneal. KOH etching of Ga-face, freestanding, n-type, GaN, is shown to aid ohmic contact formation and remove the need for a high temperature anneal. Schottky contacts were optimised on low doped epi-layers, on free standing n-GaN substrates. The contacts are governed by thermionic emission, with low ideality, 1.04 and low on-state resistance, 0.57 mcm2. The idealities of the devices are shown to decrease with increasing temperature, while the barrier heights remain relatively constant. KOH treatments of the material were shown to increase the Schottky barrier height and reduce reverse leakage currents.
Book Synopsis Study of Metal Contacts to Gallium-face and Nitrogen-face N-type GaN Material by : Di Zhu
Download or read book Study of Metal Contacts to Gallium-face and Nitrogen-face N-type GaN Material written by Di Zhu and published by . This book was released on 2008 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Contacts on ZnSe and GaN. by :
Download or read book Metal Contacts on ZnSe and GaN. written by and published by . This book was released on 1997 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.
Book Synopsis Metal Contacts on ZnSe and GaN by : Kristen Joy Duxstad
Download or read book Metal Contacts on ZnSe and GaN written by Kristen Joy Duxstad and published by . This book was released on 1997 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to GaN by : Douglas B. Ingerly
Download or read book Ohmic Contacts to GaN written by Douglas B. Ingerly and published by . This book was released on 2000 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Development and Characterization of Metal Contacts to P-GaN by : David Jonathan King
Download or read book The Development and Characterization of Metal Contacts to P-GaN written by David Jonathan King and published by . This book was released on 1998 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Contacts to P-type Gallium Nitride by : Sujit Pillai
Download or read book Metal Contacts to P-type Gallium Nitride written by Sujit Pillai and published by . This book was released on 1999 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal Contacts to GaN and Its Alloys with AIN by : Ryan Matthew France
Download or read book Metal Contacts to GaN and Its Alloys with AIN written by Ryan Matthew France and published by . This book was released on 2006 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Third Symposium on III-V Nitride Materials and Processes by : T. D. Moustakas
Download or read book Proceedings of the Third Symposium on III-V Nitride Materials and Processes written by T. D. Moustakas and published by The Electrochemical Society. This book was released on 1999 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaN and Related Materials by : Stephen J. Pearton
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Book Synopsis Microscopy of Semiconducting Materials by : A.G Cullis
Download or read book Microscopy of Semiconducting Materials written by A.G Cullis and published by CRC Press. This book was released on 2000-01-01 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigat
Book Synopsis Metal Contacts to GaN and A1xGa1-xN Films Grown by ECR-MBE by : Anand Sampath
Download or read book Metal Contacts to GaN and A1xGa1-xN Films Grown by ECR-MBE written by Anand Sampath and published by . This book was released on 1997 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics of Semiconductor Devices by : V. K. Jain
Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
Book Synopsis GaN-based Materials and Devices by : Michael Shur
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Book Synopsis Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides by : Hadis Morkoç
Download or read book Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Electron Microscopy and Analysis 2001 by : M. Aindow
Download or read book Electron Microscopy and Analysis 2001 written by M. Aindow and published by CRC Press. This book was released on 2001-12-01 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron microscopy is now a mainstay characterization tool for solid state physicists and chemists as well as materials scientists. Electron Microscopy and Analysis 2001 presents a useful snapshot of the latest developments in instrumentation, analysis techniques, and applications of electron and scanning probe microscopies. The book is ideal for
