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Alloyed Aluminum Germanium Nickel Ohmic Contacts To N Type Gallium Arsenide
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Book Synopsis Alloyed Aluminum-germanium-nickel Ohmic Contacts to N-type Gallium Arsenide by : Edouard Philippe Baaklini
Download or read book Alloyed Aluminum-germanium-nickel Ohmic Contacts to N-type Gallium Arsenide written by Edouard Philippe Baaklini and published by . This book was released on 1990 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Aluminum-germanium-nickel Ohmic Contacts to N- and P-type Gallium Arsenide by : Tim B. Haddock
Download or read book Aluminum-germanium-nickel Ohmic Contacts to N- and P-type Gallium Arsenide written by Tim B. Haddock and published by . This book was released on 1988 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions by : Eric David Marshall
Download or read book Ohmic Contacts to N-type Aluminum Gallium Arsenide (Al[subscript X]Gá́[subscript X]As, O[lesser Than Or Equal To]x[lesser Than Or Equal To]0.3) Utilizing Limited Solid-phase Reactions written by Eric David Marshall and published by . This book was released on 1989 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide by : Long-Ching Wang
Download or read book The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide written by Long-Ching Wang and published by . This book was released on 1991 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Gallium Aluminum Arsenide for High Temperature Applications by :
Download or read book Ohmic Contacts to Gallium Aluminum Arsenide for High Temperature Applications written by and published by . This book was released on 1988 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new approach for fabricating nonalloyed ohmic contacts to gallium arsenide was developed. The approach uses ultrathin layers of heavily doped germanium or silicon in contact with gallium arsenide to alter the Schottky barrier height(phi B) at the gallium arsenide interface. For n-type gallium arsenide phi B could be varied from about 0.3 to 1.0 eV. The low barriers are useful for tunneling ohmic contacts to n-gallium arsenide while the high barriers should be useful for p-gallium arsenide ohmic contacts and for Field Effect Transistor (FET) gate applications. In some instances it was necessary to interpose a thin nonmetallic electrically conducting barrier between the contact metal and the thin germanium or silicon layer to preserve optimum contact properties. Specific contact resistivity measurements indicated that contact resistivity
Book Synopsis Ohmic Contacts for Gallium Arsenide Devices by : Kenneth L. Klohn
Download or read book Ohmic Contacts for Gallium Arsenide Devices written by Kenneth L. Klohn and published by . This book was released on 1968 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: A study was made of various metals and metal alloys (Ag, Ni, In, and Au-Zn) which would make ohmic contacts to p- or n-type GaAs to determine the value of contact resistivity as a function of substrate impurity concentration. Contact resistivity values for p-type material varied from 1.2 x 10 to the -4th power ohm-cm sq for 2.8 x 10 to the 17th power/cc to 7.3 x 10 to the -7th ohm-cm sq for 9 x 10 to the 19th power/cc, and for n-type material from 2.5 x 10 to the -4th power ohm-cm sq for 1 x 10 to the 17th power/cc to 1.5 x 10 to the -5th power ohm-cm sq for 3 x 10 to the 18th power/cc. The metals were applied by evaporation or plating and followed by microalloying. The improvement in contact resistivity, as substrate impurity concentration increases, indicates the desirability of incorporating a thin, heavily doped region at the surface of a device by means of diffusion or epitaxy. The improvement in power output for a typical laser diode and its modified versions resulting from the reduction in R sub s is compared. (Author).
Book Synopsis A Thermodynamic Investigation of Indium-transition Metal Ohmic Contacts to N-type Gallium Arsenide, and an Overview of the Thermochemical Behavior of Quaternary Gallium-indium-(transition of Noble Metal)-arsenic Systems by : Douglas J. Swenson
Download or read book A Thermodynamic Investigation of Indium-transition Metal Ohmic Contacts to N-type Gallium Arsenide, and an Overview of the Thermochemical Behavior of Quaternary Gallium-indium-(transition of Noble Metal)-arsenic Systems written by Douglas J. Swenson and published by . This book was released on 1994 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Aluminum-germanium-nickel Ohmic Contacts to N- and P-type Indium Phosphide by : Christopher James Helms
Download or read book Aluminum-germanium-nickel Ohmic Contacts to N- and P-type Indium Phosphide written by Christopher James Helms and published by . This book was released on 1990 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microelectronic Materials by : C.R.M. Grovenor
Download or read book Microelectronic Materials written by C.R.M. Grovenor and published by Routledge. This book was released on 2017-10-05 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Book Synopsis A Study of Aluminum-germanium-nickel Ohmic Contact Metallurgical Effects at the Gallium Arsenide Interface by : William V. Lampert
Download or read book A Study of Aluminum-germanium-nickel Ohmic Contact Metallurgical Effects at the Gallium Arsenide Interface written by William V. Lampert and published by . This book was released on 1992 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication and Characterization of Ohmic Contacts Made with Au/Ni/Ge/Au Multilayer Metallization System on N-type Gallium Arsenide by : Seng Hin Lee
Download or read book Fabrication and Characterization of Ohmic Contacts Made with Au/Ni/Ge/Au Multilayer Metallization System on N-type Gallium Arsenide written by Seng Hin Lee and published by . This book was released on 1990 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide Integrated Circuit Technology by : Richard Morton
Download or read book Gallium Arsenide Integrated Circuit Technology written by Richard Morton and published by . This book was released on 2000 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Contact Resistance of Nickel/Germanium/Gold, Palladium/Germanium/Titanium/Platinum, and Titanium/Palladium Ohmic Contacts to Gallium Arsenide and Its Temperature Dependence from 4.2 to 350K. by :
Download or read book Contact Resistance of Nickel/Germanium/Gold, Palladium/Germanium/Titanium/Platinum, and Titanium/Palladium Ohmic Contacts to Gallium Arsenide and Its Temperature Dependence from 4.2 to 350K. written by and published by . This book was released on 1996 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt: The specific contact resistance, r sub c, and contact resistance, Rc, of NiGeAu and PdGeTiPt Ohmic contacts to n-GaAs and TiPd and PdGeTiPt Ohmic contacts to p+-GaAs were determined as a function of temperature between 4.2 and 350K The low r sub c obtained for some of the contacts at 4.2K implies that much of the total contact resistance measured at 4.2K in 2DEG structures lies across the n-n heterojunction(s) in series with the metal semiconductor junction. Although NiGeAu contacts have a lower contact resistance to n-GaAs, PdGeTiPt contacts, which have much better edge definition, can be substituted for the NiGeAu when they are properly annealed. Also, low resistance contacts can be made to heavily p-doped GaAs at 4.2K using either TiPd or properly annealed PdGeTiPt contacts, r sub c for the TiPd contacts annealed at 350 deg C for 15 s and at 395 deg C for 90s, and the 350 deg C/15s p-PdGeTiPt contact fit the field emission model, and the 395 deg C/90s NiGeAu, 350 deg C/15s n-PdGeTiPt, and 395 deg C/90s p-PdGeTiPt contacts can be described by the thermal field emission mode. However, the 350 deg C/15s NiGeAu and 395 deg C/90s n PdGeTiPt contacts have a much larger temperature dependence that can best be described by tunneling to deep states near the metal-semiconductor interface. p4.
Book Synopsis Dopants and Defects in Semiconductors by : Matthew D. McCluskey
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ―Materials Today "... well written, with clear, lucid explanations ..." ―Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Book Synopsis Masters Theses in the Pure and Applied Sciences by : W. H. Shafer
Download or read book Masters Theses in the Pure and Applied Sciences written by W. H. Shafer and published by Plenum Publishing Corporation. This book was released on 1992 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses Listed by Discipline: Aerospace Engineering. Agricultural Economics, Sciences and Engineering. Architechtural Engineering and Urban Planning. Astronomy. Astrophysics. Ceramic Engineering. Communications Engineering and Computer Science. Cryogenic Engineering. Electrical Engineering. Engineering Mechanics. Engineering Physics. Engineering Science. Fuels, Combustion, and Air Pollution. General and Environmental Engineering. Geochemistry and Soil Science. Geological Sciences and Geophysical Engineering. Geology and Earth Science. Geophysics. Industrial Engineering. Marine and Ocean Engineering. Materials Science and Engineering. Mechanical Engineering and Bioengineering. Metallurgy. Meteorology and Atmospheric Science. 17 additional disciplines. Index.
Book Synopsis Correlation of the Electrical and Structural Characteristics of AuGe Alloyed Ohmic Contacts to N-type Gallium Arsenide by : John T. Lukowski
Download or read book Correlation of the Electrical and Structural Characteristics of AuGe Alloyed Ohmic Contacts to N-type Gallium Arsenide written by John T. Lukowski and published by . This book was released on 1984 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Concise Encyclopedia of Semiconducting Materials & Related Technologies by : S. Mahajan
Download or read book Concise Encyclopedia of Semiconducting Materials & Related Technologies written by S. Mahajan and published by Elsevier. This book was released on 2013-10-22 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
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