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Advances In Gan Gaas Sic And Related Alloys On Silicon Substrates
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Book Synopsis Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates by : Materials Research Society. Fall Meeting Symposium C.
Download or read book Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates written by Materials Research Society. Fall Meeting Symposium C. and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: Volume 1068 by : Materials Research Society. Meeting Symposium C.
Download or read book Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: Volume 1068 written by Materials Research Society. Meeting Symposium C. and published by . This book was released on 2008-08-29 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: by : Tingkai Li
Download or read book Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: written by Tingkai Li and published by Cambridge University Press. This book was released on 2014-06-05 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: To meet increasingly challenging and complex system requirements, as well as to stay cost effective, it is not enough to use one single semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing attributes with the superior performance attributes of compound semiconductors (CS). Such a combination will enable performance superior to that achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon substrates indicates the worldwide importance of these materials and devices. This book represents the latest technical advancements and information on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration techniques; conventional III-V materials and devices on silicon; and silicon and other materials on silicon.
Book Synopsis Advances in Silicon Carbide Processing and Applications by : Stephen E. Saddow
Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Book Synopsis Porous Silicon Carbide and Gallium Nitride by : Randall M. Feenstra
Download or read book Porous Silicon Carbide and Gallium Nitride written by Randall M. Feenstra and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Book Synopsis GaN and Related Alloys: Volume 537 by : S. J. Pearton
Download or read book GaN and Related Alloys: Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
Book Synopsis Symposium L: GaN and Related Alloys by :
Download or read book Symposium L: GaN and Related Alloys written by and published by . This book was released on 2003 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Symposium L on GaN and Related Alloys, recent results on growth and characterization of III-nitride semiconductors and their application in optoelectronic and electronic devices were reported. Several advances were reported in nitride-based technology for visible and UV-light emitters. Researchers at the University of South Carolina presented results on LEDs operating at 250 nm, while NTT researchers presented 350-nm UV LEDs with maximum external efficiency of 1.4%; phosphor-coated red and white LEDs incorporating their UV LEDs were also described by NTT. Lumileds researchers discussed the performance of their latest Luxeon LEDs, which achieve external quantum efficiency of 25% and 10% at 450 nm and 530 nm, respectively. In addition, Lumileds presented a demonstration of backlighting using 34 Luxeon chips to create a full-color light source with color temperature up to 15,000 K.A number of notable results in the nitride materials characterization arena were presented, particularly with regard to defect structure and the behavior of Mg in p-doped GaN. Continued advances were also reported in the development of nitride-based electronic devices. New materials and device designs for nitride-based heterostructure FETs, targeted for rf power applications, were presented by several research groups. Included among these was a discussion of advances in the growth and fabrication of nitride electronic devices on Si substrates. Also reported were initial results on an AlGaAs-GaAs-GaN heternstructure biopolar transistor realized using a wafer fusion process for device fabrication.
Book Synopsis GaN and Related Alloys - 2002: Volume 743 by : Materials Research Society. Meeting
Download or read book GaN and Related Alloys - 2002: Volume 743 written by Materials Research Society. Meeting and published by . This book was released on 2003-06-02 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
Download or read book GaN and Related Alloys written by and published by . This book was released on 1999 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide by : Wolfgang J. Choyke
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Book Synopsis Silicon Carbide 2008--materials, Processing and Devices by : Michael Dudley
Download or read book Silicon Carbide 2008--materials, Processing and Devices written by Michael Dudley and published by . This book was released on 2008 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Performance of Devices Made of Large Band-gap Semiconductors, SiC and GaN by : Taizo Okayama
Download or read book Performance of Devices Made of Large Band-gap Semiconductors, SiC and GaN written by Taizo Okayama and published by . This book was released on 2007 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Silicon (Si) and gallium arsenide (GaAs) devices have limitations for certain applications such as high-power and/or high-frequency due to their material properties. As a partial fulfillment of the requirements for the degree of doctor of philosophy in electrical and computer engineering, devices made using two promising substrate materials: silicon carbide (SiC) and gallium nitride (GaN) were studied for high-power and high-frequency applications, respectively. The SiC is considered as a suitable material for high-power devices such as double-implanted metal-oxide-semiconductor field-effect-transistor (DMOSFET), in which the current flows vertically to the substrate contact. The DMOSFET consists of several hundred cells connected in parallel, making it possible to sustain both high blocking voltage and high current. GaN grown on SiC is considered as a suitable material for high-frequency and high-power applications. High electron mobility transistor x (HEMT) fabricated with GaN and aluminum gallium nitride (AlGaN) utilizes a conduction band offset and piezoelectric polarization effect at the junction between these two materials to produce a highly conductive channel. However, in spite of their promises, the performance of both SiC DMOSFET and GaN HEMT devices, with respect to their Si and GaAs counterparts are not well understood. In this work, first the SiC DMOSFET devices were characterized for their threshold voltage, drain current and breakdown voltage stability and then GaN devices for their efficiency and linearity performance at high-frequency. The results of SiC DMOSFETs were fitted with simulation to determine the location of the interface charge responsible for instability in device behavior. The charge at the inner region of the junction termination extension has the most pronounced effect on the breakdown voltage instability. The interlayer dielectric (ILD) composition that can minimize the SiC DMOSFET instability problem is also determined considering several limitations on the maximum weight percentages of the boron and phosphorous constituent dopants in the boro-phospho-silicate glass (BPSG) ILD layer. The BPSG with a composition of 2.4 weight percent B and 5 weight percent P is projected as optimum for the processing conditions used for making the SiC DMOSFET of this study. Results of GaN HEMTs were compared with those of GaAs pseudomorphic HEMTs"--Abstract.
Book Synopsis Amorphous and Plycrystalline Thin-Film Silicon Science and Technology - 2008: Volume 1066 by : Arokia Nathan
Download or read book Amorphous and Plycrystalline Thin-Film Silicon Science and Technology - 2008: Volume 1066 written by Arokia Nathan and published by . This book was released on 2008-10-22 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Doping Engineering for Front-End Processing: Volume 1070 by : Materials Research Society. Meeting Symposium E.
Download or read book Doping Engineering for Front-End Processing: Volume 1070 written by Materials Research Society. Meeting Symposium E. and published by . This book was released on 2008-10-17 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Naval Research Reviews written by and published by . This book was released on 1999 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Materials Science and Technology for Nonvolatile Memories: Volume 1071 by : Dirk J. Wouters
Download or read book Materials Science and Technology for Nonvolatile Memories: Volume 1071 written by Dirk J. Wouters and published by . This book was released on 2008-07-28 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
